Abstract: To provide a high-voltage fuel cell. The fuel cell is a fuel cell comprising an anode-side gas diffusion layer, an anode catalyst layer, an electrolyte membrane, a cathode catalyst layer and a cathode-side gas diffusion layer in this order, wherein a gas diffusion resistance ratio of the anode-side gas diffusion layer to the cathode-side gas diffusion layer is more than 1.50 and less than 2.79; wherein a gas diffusion resistance value of the cathode-side gas diffusion layer is 84 S/m or less at a relative humidity of 165%; and wherein a gas diffusion resistance value of the anode-side gas diffusion layer is less than 234 S/m at a relative humidity of 165%.

Abstract: To provide a high-voltage fuel cell. The fuel cell is a fuel cell comprising an anode-side gas diffusion layer, an anode catalyst layer, an electrolyte membrane, a cathode catalyst layer and a cathode-side gas diffusion layer in this order, wherein a gas diffusion resistance ratio of the anode-side gas diffusion layer to the cathode-side gas diffusion layer is more than 1.50 and less than 2.79; wherein a gas diffusion resistance value of the cathode-side gas diffusion layer is 84 S/m or less at a relative humidity of 165%; and wherein a gas diffusion resistance value of the anode-side gas diffusion layer is less than 234 S/m at a relative humidity of 165%.

Abstract: A method for producing a thermoelectric material, comprising: mixing an Sn powder and a powder containing a first dopant element to obtain a first mixed raw material, heating the first mixed raw material at a temperature allowing for mutual diffusion of Sn and the first dopant element to obtain a first aggregate, pulverizing the first aggregate to obtain a first powder, mixing an Mg powder, an Si powder, and the first powder to obtain a second mixed raw material, heating the second mixed raw material at a temperature allowing for mutual diffusion of Mg, Si, Sn and the first dopant element to obtain a second aggregate, pulverizing the second aggregate to obtain a second powder, and pressure-sintering the second powder, and wherein the first dopant element is one or more elements selected from Al, Ag, As, Bi, Cu, Sb, Zn, P, and B.

Abstract: A thermoelectric conversion device including an n-type thermoelectric converter, a p-type thermoelectric converter, a high temperature-side electrode with which one end of the n-type thermoelectric converter and one end of the p-type thermoelectric converter are put into contact, a first low temperature-side electrode in contact with another end of the n-type thermoelectric converter, and a second low temperature-side electrode in contact with another end of the p-type thermoelectric converter, wherein in the n-type thermoelectric converter, the side in contact with the high temperature-side electrode is composed of a carrier generation semiconductor containing Mg2Sn, and in the n-type thermoelectric converter, the side in contact with the first low temperature-side electrode is composed of a carrier transfer semiconductor containing Mg2Si1-xSnx, wherein 0.6?x?0.7, and a first n-type dopant.

Abstract: A thermoelectric conversion device including an n-type thermoelectric converter, a p-type thermoelectric converter, a high temperature-side electrode with which one end of the n-type thermoelectric converter and one end of the p-type thermoelectric converter are put into contact, a first low temperature-side electrode in contact with another end of the n-type thermoelectric converter, and a second low temperature-side electrode in contact with another end of the p-type thermoelectric converter, wherein in the n-type thermoelectric converter, the side in contact with the high temperature-side electrode is composed of a carrier generation semiconductor containing Mg2Sn, and in the n-type thermoelectric converter, the side in contact with the first low temperature-side electrode is composed of a carrier transfer semiconductor containing Mg2Si1-xSnx, wherein 0.6?x?0.7, and a first n-type dopant.

Abstract: A method for producing a thermoelectric material, comprising: mixing an Sn powder and a powder containing a first dopant element to obtain a first mixed raw material, heating the first mixed raw material at a temperature allowing for mutual diffusion of Sn and the first dopant element to obtain a first aggregate, pulverizing the first aggregate to obtain a first powder, mixing an Mg powder, an Si powder, and the first powder to obtain a second mixed raw material, heating the second mixed raw material at a temperature allowing for mutual diffusion of Mg, Si, Sn and the first dopant element to obtain a second aggregate, pulverizing the second aggregate to obtain a second powder, and pressure-sintering the second powder, and wherein the first dopant element is one or more elements selected from Al, Ag, As, Bi, Cu, Sb, Zn, P, and B.

Abstract: The invention includes: powder preparation step of obtaining magnetic core powders by mixing, of magnetic powders with thermosetting resin powders in hot state; powder filling step of filling the obtained magnetic core powders into a die; a compaction step of compacting magnetic core powders; and compact heating step of heating, compacts to the elevated temperature state at which the thermosetting resin hardens after compaction.

Abstract: The invention includes: powder preparation step of obtaining magnetic core powders by mixing, of magnetic powders with thermosetting resin powders in hot state; powder filling step of filling the obtained magnetic core powders into a die; a compaction step of compacting magnetic core powders; and compact heating step of heating, compacts to the elevated temperature state at which the thermosetting resin hardens after compaction.