Patents by Inventor Hidenobu KOJIMA

Hidenobu KOJIMA has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Publication number: 20220093733
    Abstract: A semiconductor device includes: a substrate having a lower surface and a side surface and the substrate containing a semiconductor material; and an electrode provided on the lower surface, wherein the side surface has a first side surface portion, a second side surface portion provided on the first side surface portion, and a third side surface portion provided on the second side surface portion, the third side surface portion protrudes in a plane parallel to the lower surface more than the second side surface portion, and the first side surface portion protrudes in a plane parallel to the lower surface more than the third side surface portion.
    Type: Application
    Filed: September 13, 2021
    Publication date: March 24, 2022
    Inventor: Hidenobu KOJIMA
  • Patent number: 11217688
    Abstract: A semiconductor device includes a semiconductor part, a metal layer, first and second electrodes, and first and second control electrodes. The first and second electrodes are provided on a front surface of the semiconductor part and arranged along the front surface of the semiconductor part. The first control electrode is provided between the semiconductor part and the first electrode. The second control electrode is provided between the semiconductor part and the second electrode. The metal layer covers a back-surface of the semiconductor part. The metal layer includes a first layer and a second layer. The first layer of the metal layer is electrically connected to the semiconductor part. The second layer of the metal layer is provided on the first layer inside a periphery of the first layer. The second layer has a layer thickness thicker than a layer thickness of the first layer.
    Type: Grant
    Filed: March 4, 2020
    Date of Patent: January 4, 2022
    Assignees: KABUSHIKI KAISHA TOSHIBA, TOSHIBA ELECTRONIC DEVICES & STORAGE CORPORATION
    Inventor: Hidenobu Kojima
  • Publication number: 20210074844
    Abstract: A semiconductor device includes a semiconductor part, a metal layer, first and second electrodes, and first and second control electrodes. The first and second electrodes are provided on a front surface of the semiconductor part and arranged along the front surface of the semiconductor part. The first control electrode is provided between the semiconductor part and the first electrode. The second control electrode is provided between the semiconductor part and the second electrode. The metal layer covers a back-surface of the semiconductor part. The metal layer includes a first layer and a second layer. The first layer of the metal layer is electrically connected to the semiconductor part. The second layer of the metal layer is provided on the first layer inside a periphery of the first layer. The second layer has a layer thickness thicker than a layer thickness of the first layer.
    Type: Application
    Filed: March 4, 2020
    Publication date: March 11, 2021
    Applicants: Kabushiki Kaisha Toshiba, Toshiba Electronic Devices & Storage Corporation
    Inventor: Hidenobu Kojima
  • Patent number: 10727332
    Abstract: A semiconductor device includes a substrate, a semiconductor body and a metal layer between the substrate and the semiconductor body. The device further includes first and second electrodes, a first control electrode between the semiconductor body and the first electrode; and a second control electrode between the semiconductor body and the second electrode. The semiconductor body includes a first to fifth semiconductor layers. The second semiconductor layer is provided between the first semiconductor layer and the first electrode. The third semiconductor layer is selectively provided between the second semiconductor layer and the first electrode. The fourth semiconductor layer is provided between the first semiconductor layer and the second electrode. The fifth semiconductor layer selectively provided between the fourth semiconductor layer and the second electrode. The first, third and fifth semiconductor layers are of a first conductivity type.
    Type: Grant
    Filed: December 28, 2018
    Date of Patent: July 28, 2020
    Assignees: KABUSHIKI KAISHA TOSHIBA, TOSHIBA ELECTRONIC DEVICES & STORAGE CORPORATION
    Inventor: Hidenobu Kojima
  • Publication number: 20200083367
    Abstract: A semiconductor device includes a substrate, a semiconductor body and a metal layer between the substrate and the semiconductor body. The device further includes first and second electrodes, a first control electrode between the semiconductor body and the first electrode; and a second control electrode between the semiconductor body and the second electrode. The semiconductor body includes a first to fifth semiconductor layers. The second semiconductor layer is provided between the first semiconductor layer and the first electrode. The third semiconductor layer is selectively provided between the second semiconductor layer and the first electrode. The fourth semiconductor layer is provided between the first semiconductor layer and the second electrode. The fifth semiconductor layer selectively provided between the fourth semiconductor layer and the second electrode. The first, third and fifth semiconductor layers are of a first conductivity type.
    Type: Application
    Filed: December 28, 2018
    Publication date: March 12, 2020
    Applicants: Kabushiki Kaisha Toshiba, Toshiba Electronic Devices & Storage Corporation
    Inventor: Hidenobu KOJIMA