Patents by Inventor Hidenori Iwadate

Hidenori Iwadate has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Semiconductor device and manufacturing method thereof
    Patent number: 8084314
    Abstract: A first insulation film is provided on a semiconductor substrate. A high resistance element formed from polysilicon is provided on the first insulation film. A second insulation film is provided on the high resistance element. A hydrogen diffusion preventing film having a hydrogen diffusion coefficient smaller than that of the second insulation film is provided on the second insulation film. The hydrogen diffusion preventing film covers a part of the high resistance element.
    Type: Grant
    Filed: August 11, 2010
    Date of Patent: December 27, 2011
    Assignee: Panasonic Corporation
    Inventors: Hidenori Iwadate, Takeshi Kobiki
  • Spiral planar inductor and manufacturing method thereof
    Patent number: 7977767
    Abstract: An inductor includes an inductor wiring made of a metal layer and having a spiral planar shape. In a cross-sectional shape in a width direction of the inductor wiring, the inductor wiring has a larger film thickness at least in its inner side end than in its middle part.
    Type: Grant
    Filed: December 11, 2008
    Date of Patent: July 12, 2011
    Assignee: Panasonic Corporation
    Inventors: Yutaka Nabeshima, Masaoki Kajiyama, Tomohiro Matsunaga, Hidenori Iwadate
  • SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF
    Publication number: 20100304545
    Abstract: A first insulation film is provided on a semiconductor substrate. A high resistance element formed from polysilicon is provided on the first insulation film. A second insulation film is provided on the high resistance element. A hydrogen diffusion preventing film having a hydrogen diffusion coefficient smaller than that of the second insulation film is provided on the second insulation film. The hydrogen diffusion preventing film covers a part of the high resistance element.
    Type: Application
    Filed: August 11, 2010
    Publication date: December 2, 2010
    Inventors: Hidenori IWADATE, Takeshi KOBIKI
  • Semiconductor device and manufacturing method thereof
    Patent number: 7795701
    Abstract: A first insulation film is provided on a semiconductor substrate. A high resistance element formed from polysilicon is provided on the first insulation film. A second insulation film is provided on the high resistance element. A hydrogen diffusion preventing film having a hydrogen diffusion coefficient smaller than that of the second insulation film is provided on the second insulation film. The hydrogen diffusion preventing film covers a part of the high resistance element.
    Type: Grant
    Filed: March 11, 2008
    Date of Patent: September 14, 2010
    Assignee: Panasonic Corporation
    Inventors: Hidenori Iwadate, Takeshi Kobiki
  • SEMICONDUCTOR DEVICE AND PROCESS FOR MANUFACTURING THE SAME
    Publication number: 20090283855
    Abstract: An inductor having a helicoidal shape is provided on an insulation film formed on a semiconductor substrate. A conductive thin layer (a plating layer) is provided on a surface of the inductor. A conductivity of the conductive thin layer is higher than that of the inductor. According to the constitution, a Q value can be improved, and a large volume of current can be flowed.
    Type: Application
    Filed: May 18, 2009
    Publication date: November 19, 2009
    Inventors: Hidenori IWADATE, Masaoki KAJIYAMA
  • INDUCTOR AND MANUFACTURING METHOD THREOF
    Publication number: 20090160018
    Abstract: An inductor includes an inductor wiring made of a metal layer and having a spiral planar shape. In a cross-sectional shape in a width direction of the inductor wiring, the inductor wiring has a larger film thickness at least in its inner side end than in its middle part.
    Type: Application
    Filed: December 11, 2008
    Publication date: June 25, 2009
    Inventors: Yutaka Nabeshima, Masaoki Kajiyama, Tomohiro Matsunaga, Hidenori Iwadate
  • SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF
    Publication number: 20080224265
    Abstract: A first insulation film is provided on a semiconductor substrate. A high resistance element formed from polysilicon is provided on the first insulation film. A second insulation film is provided on the high resistance element. A hydrogen diffusion preventing film having a hydrogen diffusion coefficient smaller than that of the second insulation film is provided on the second insulation film. The hydrogen diffusion preventing film covers a part of the high resistance element.
    Type: Application
    Filed: March 11, 2008
    Publication date: September 18, 2008
    Inventors: Hidenori Iwadate, Takeshi Kobiki
  • Semiconductor device and manufacturing method thereof
    Publication number: 20050233516
    Abstract: In a semiconductor device according to the present invention, an emitter diffusion layer is formed with a polycrystal silison emitter layer serving as a diffusion source, and an impurity concentration of the polycrystal silicon emitter layer is higher than an impurity concentration of the emitter diffusion layer, wherein the emitter diffusion layer is of a shallow junction and an emitter impurity concentration is increased.
    Type: Application
    Filed: April 1, 2005
    Publication date: October 20, 2005
    Inventors: Hidenori Iwadate, Hitoshi Kuriyama, Masao Yoshizawa