Abstract: An electro-optical device includes an electro-optical panel that includes a first strain sensor element including a first resistance member and a second strain sensor element including a second resistance member that are provided in a pixel area, and a first wiring electrically coupling the first strain sensor element and the second strain sensor element, a first variable resistance member, a second variable resistance member, and a second wiring electrically coupling the first variable resistance member and the second variable resistance member.

Abstract: A projector includes an image light generator configured to modulate light emitted from a light source to generate image light, a projection optical device configured to project the image light, a polarization switching element disposed at a light exit side of the image light generator and configured to switch a polarization state of the image light emitted from the image light generator, and a controller configured to control the polarization switching element. The controller controls the polarization switching element to switch the polarization state of the image light with a predetermined period.

Abstract: A projector includes an image light generator configured to modulate light emitted from a light source to generate image light, a projection optical device configured to project the image light, a polarization switching element disposed at a light exit side of the image light generator and configured to switch a polarization state of the image light emitted from the image light generator, and controller configured to control the polarization switching element. The controller controls the polarization switching element to switch the polarization state of the image light with a predetermined period.

Abstract: An electro-optical device includes a contact hole configured to electrically connect a scanning line and a gate electrode of a TFT as a transistor, the contact hole being provided, in plan view, along a semiconductor layer of the TFT and including a body portion spaced apart from a channel region of the semiconductor layer by a first distance, and a protruded portion protruding from the body portion toward a region other than the channel region of the semiconductor layer, and spaced apart from the region other than the channel region by a second distance, which is less than the first distance.

Abstract: An electro-optical device includes an electro-optical panel that includes a first strain sensor element including a first resistance member and a second strain sensor element including a second resistance member that are provided in a pixel area, and a first wiring electrically coupling the first strain sensor element and the second strain sensor element, a first variable resistance member, a second variable resistance member, and a second wiring electrically coupling the first variable resistance member and the second variable resistance member.

Abstract: A liquid crystal apparatus as an electro-optical device includes a base material as a substrate, a TFT as a transistor, a second scanning line having a light shielding property in a layer between a semiconductor layer of the TFT and the base material, and a light shielding layer disposed between the second scanning line and an adjacent second scanning line adjacent to the second scanning line so as to overlap each of an end portion of the one second scanning line and an end portion of the adjacent second scanning line, in plan view from a normal line direction on one surface of the substrate.

Abstract: A liquid crystal apparatus as an electro-optical device includes a base material as a substrate, a TFT as a transistor, a second scanning line having a light shielding property in a layer between a semiconductor layer of the TFT and the base material, and a light shielding layer disposed between the second scanning line and an adjacent second scanning line adjacent to the second scanning line so as to overlap each of an end portion of the one second scanning line and an end portion of the adjacent second scanning line, in plan view from a normal line direction on one surface of the substrate.

Abstract: An electro-optical device includes a contact hole configured to electrically connect a scanning line and a gate electrode of a TFT as a transistor, the contact hole being provided, in plan view, along a semiconductor layer of the TFT and including a body portion spaced apart from a channel region of the semiconductor layer by a first distance, and a protruded portion protruding from the body portion toward a region other than the channel region of the semiconductor layer, and spaced apart from the region other than the channel region by a second distance, which is less than the first distance.

Abstract: A liquid crystal device as an electro-optical device includes a base substrate as a substrate, a TFT as a transistor, and a holding capacitor, and the holding capacitor includes a first capacitance electrode disposed on the base substrate side and a second capacitance electrode disposed on the first capacitance electrode via a capacitance insulation film, and the first capacitance electrode includes a first electrode layer containing tungsten silicide, a second electrode layer containing silicide of a metal more stabilized through silicidation than tungsten, and a third electrode layer containing silicon stacked one on another.

Abstract: A liquid crystal device as an electro-optical device includes a base substrate as a substrate, a TFT as a transistor, and a holding capacitor, and the holding capacitor includes a first capacitance electrode disposed on the base substrate side and a second capacitance electrode disposed on the first capacitance electrode via a capacitance insulation film, and the first capacitance electrode includes a first electrode layer containing tungsten silicide, a second electrode layer containing silicide of a metal more stabilized through silicidation than tungsten, and a third electrode layer containing silicon stacked one on another.

Abstract: A thin film transistor includes a gate electrode and a semiconductor layer. The semiconductor layer includes a channel region, a source region, a drain region, a low-concentration impurity region provided between the channel region and the source or drain region and a high-concentration impurity region. The high-concentration impurity region overlaps with the gate electrode.

Abstract: A thin film transistor includes a gate electrode and a semiconductor layer. The semiconductor layer includes a channel region, a source region, a drain region, a low-concentration impurity region provided between the channel region and the source or drain region and a high-concentration impurity region. The high-concentration impurity region overlaps with the gate electrode.

Abstract: There is provided an electro-optical device including, above a substrate, data lines extending in a first direction, scanning lines extending in a second direction and intersecting the data lines, pixel electrodes and thin film transistors disposed so as to correspond to intersection regions of the data lines and the scanning lines; and storage capacitors electrically connected to the thin film transistors and the pixel electrodes, the thin film transistors including semiconductor layers having channel regions which extend in a longitudinal direction and channel adjacent regions which extend further from the channel regions in the longitudinal direction, and the scanning lines including light-shielding parts disposed at sides of the channel regions.

Abstract: An electro-optical device includes, above a substrate: a data line extending in a first direction; a scanning line extending in a second direction and intersecting the data line; pixel electrode and thin film transistor disposed so as to correspond to intersection regions of the data line and the scanning line; a storage capacitor electrically connected to the thin film transistor and the pixel electrode; a shielding layer disposed between the data line and the pixel electrode; an interlayer insulating film disposed as the base of the pixel electrode; and a contact hole formed in the interlayer insulating film, to electrically connect the thin film transistor to the pixel electrode. Further, the entire region inside the contact hole is filled with a filler.

Abstract: There is provided an electro-optical device including, above a substrate, data lines extending in a first direction, scanning lines extending in a second direction and intersecting the data lines, pixel electrodes and thin film transistors disposed so as to correspond to intersection regions of the data lines and the scanning lines; and storage capacitors electrically connected to the thin film transistors and the pixel electrodes, the thin film transistors including semiconductor layers having channel regions which extend in a longitudinal direction and channel adjacent regions which extend further from the channel regions in the longitudinal direction, and the scanning lines including light-shielding parts disposed at sides of the channel regions.

Abstract: An electro-optical device includes above a substrate: data lines extending in a first direction; scanning lines extending in a second direction in such a manner that the scanning lines and data lines cross each other; pixel electrodes and thin-film transistors each placed in corresponding regions corresponding to intersections of the scanning lines and data lines; storage capacitors disposed below the data lines and each electrically connected to the corresponding thin-film transistors and pixel electrodes; a capacitor line disposed above the data lines; first junction electrodes, formed using the same film used to form the data lines, each electrically connecting the corresponding pixel potential capacitor electrodes of the storage capacitors and pixel electrodes; and second junction electrodes, formed using the same film as that to form the data lines, each electrically connecting the corresponding constant potential capacitor electrodes of the storage capacitors and the capacitor line.

Abstract: An electro-optical apparatus is provided with a pixel electrode, a TFT connected thereto, and a scanning line and a data line connected thereto above a TFT array substrate. Furthermore, a junction layer, which performs the function of a pixel-potential-side capacitor electrode of a storage capacitor, and a capacitor line including a fixed-potential-side capacitor electrode arranged to face this with a dielectric film therebetween, are provided. A multilayer junction-layer connecting the junction layer and the pixel electrode is provided from the same multilayer film as the data line, while covering a notch portion of the capacitor line. The upper film of this multilayer film is made of a material unlikely to be subject to electrolytic corrosion by ITO of the pixel electrode compared with that in the lower film.

Abstract: There is provided an electro-optical device including, above a substrate, data lines extending in a first direction, scanning lines extending in a second direction and intersecting the data lines, pixel electrodes and thin film transistors disposed so as to correspond to intersection regions of the data lines and the scanning lines; and storage capacitors electrically connected to the thin film transistors and the pixel electrodes, the thin film transistors including semiconductor layers having channel regions which extend in a longitudinal direction and channel adjacent regions which extend further from the channel regions in the longitudinal direction, and the scanning lines including light-shielding parts disposed at sides of the channel regions.

Abstract: The invention provides a light shielding film having excellent capability of shielding light. The light shielding film includes a barrier layer formed of a material selected from the group including a refractory nitride compound, silicon compound, tungsten compound, tungsten, and silicon, and also includes a metal layer formed of a material selected from the group including a metal in the form of a simple substance or a metal compound, whose high capability of shielding light is degraded when being oxidized.

Abstract: An electro-optical device includes a TFT array substrate, pixel electrodes, thin film transistors electrically connected to the pixel electrodes, scanning lines and data lines connected thereto, and a nitride film disposed at least on surfaces of the data lines provided above the TFT array substrate.