Abstract: Provided is a semiconductor device and a method of manufacturing a semiconductor device in which deterioration of energy loss is suppressed. The semiconductor device includes: a drift layer of a first conductivity type provided between a first main surface and a second main surface of a semiconductor substrate; and a field stop layer of the first conductivity type having an impurity concentration higher than that of the drift layer and provided between the drift layer and the second main surface. A net carrier concentration profile at room temperature of the field stop layer have at least one peak from the second main surface toward the first main surface. A hydrogen atom concentration profile of the field stop layer have at least two peaks from the second main surface toward the first main surface. The hydrogen atom concentration profile has more peaks than the net carrier concentration profile.

Abstract: A somatostatin receptor subtype 2 agonist represented by the general formula (I): wherein all symbols have the same meanings as described in the specification, or a salt thereof, which can be easily administered and can alleviate pain accompanied by the therapy of patients.

Abstract: A method for controlling the cooling of a steel sheet characterized by controlling the end-of-cooling temperature in a cooling process from the Ae3 or above temperature of the steel sheet, during which; preliminarily obtaining enthalpies (H? and H?) of an austenite phase and ferrite phase respectively at some temperature, obtaining a gynamic enthalpy (Hsys) defined by formula (1) with an untransformed fraction (X?) of austenite in accordance with a target temperature pattern, predicting the temperature by using a gradient of this dynamic enthalpy with respect to temperature as a dynamic specific heat and controlling the cooling of the steel sheet: Hsys=H?(X?)+H?(1?X?).

Abstract: A method for controlling the cooling of a steel plate, characterized in that, in the control of the temperature at the end of cooling in the process of the cooling of a steel plate from the Ae3 temperature or higher, the enthalpies (H? and H?) of the austenite and ferrite phases at respective temperatures are determined in advance, a dynamic enthalpy (Hsys) defined by the formula (1) is determined from the proportion (X?) of untransformed austenite being determined in the correspondence to an objective temperature pattern, and a temperature of the steel plate is predicted by using an inclination of the above dynamic enthalpy to temperature as a dynamic specific heat for controlling the cooling of the steel plate. Hsys=H? (X?)+H? (1?X?) . . .

Abstract: A dielectric material for high frequency having a composition formula xBaO.yMgO.zWO.sub.3, a composition formula xSrO.yMgO.zWO.sub.3 or a composition formula xBaO.yMgO.zWO.sub.3.wTaO.sub.5/2 wherein x, y, z and w have a specified relationship. It has a high inductivity and a high Q value in a high frequency region especially a microwave and a milliwave.