Patents by Inventor Hidenori Nagashima

Hidenori Nagashima has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Device that makes it possible to selectively use nonvolatile memory as RAM or ROM
    Patent number: 6785158
    Abstract: Nonvolatile memory cells are arranged at crossing points of bit-lines and word-lines. A mode signal indicates whether the nonvolatile memory cells are to be used as a RAM or as a ROM. When the nonvolatile memory cells are to be used as RAM, current is allowed to flow through the bit-lines in one specific direction, current is allowed to flow through the word-lines and the direction of the current flowing through the word-lines is adjusted to write data in the nonvolatile memory cells. When the nonvolatile memory cells are to be used as ROM, no current is allowed to flow through the bit-lines or the word-lines so that data can not be written in the nonvolatile memory cells.
    Type: Grant
    Filed: November 22, 2002
    Date of Patent: August 31, 2004
    Assignee: Renesas Technology Corp.
    Inventor: Hidenori Nagashima
  • Device that makes it possible to selectively use nonvolatile memory as RAM or ROM
    Publication number: 20030214834
    Abstract: Nonvolatile memory cells are arranged at crossing points of bit-lines and word-lines. A mode signal indicates whether the nonvolatile memory cells are to be used as a RAM or as a ROM. When the nonvolatile memory cells are to be used as RAM, current is allowed to flow through the bit-lines in one specific direction, current is allowed to flow through the word-lines and the direction of the current flowing through the word-lines is adjusted to write data in the nonvolatile memory cells. When the nonvolatile memory cells are to be used as ROM, no current is allowed to flow through the bit-lines or the word-lines so that data can not be written in the nonvolatile memory cells.
    Type: Application
    Filed: November 22, 2002
    Publication date: November 20, 2003
    Inventor: Hidenori Nagashima