Abstract: Triazabicylodecene can effectively n-dope a variety of organic semiconductors, including PCBM, thus increasing in-plane conductivities. We synthesized a series of TBD-based n-dopants via an N-alkylation reaction and studied the effect of various alkyl chains on the physical and device properties of the dopants. Combining two TBD moieties on a long alky chain gave a solid dopant, 2TBD-C10, with high thermal stability above 250° C. PCBM films doped by 2TBD-C10 were the most tolerant to thermal annealing and reached in-plane conductivities of 6.5×10?2 S/cm. Furthermore, incorporating 2TBD-C10 doped PCBM as the electron transport layer (ETL) in methylammonium lead triiodide (MAPbI3) based photovoltaics led to a 23% increase in performance, from 11.8% to 14.5% PCE.

Abstract: Triazabicylodecene can effectively n-dope a variety of organic semiconductors, including PCBM, thus increasing in-plane conductivities. We synthesized a series of TBD-based n-dopants via an N-alkylation reaction and studied the effect of various alkyl chains on the physical and device properties of the dopants. Combining two TBD moieties on a long alky chain gave a solid dopant, 2TBD-C10, with high thermal stability above 250° C. PCBM films doped by 2TBD-C10 were the most tolerant to thermal annealing and reached in-plane conductivities of 6.5×10?2 S/cm. Furthermore, incorporating 2TBD-C10 doped PCBM as the electron transport layer (ETL) in methylammonium lead triiodide (MAPbI3) based photovoltaics led to a 23% increase in performance, from 11.8% to 14.5% PCE.

Abstract: Sulfur-fused perylene diimides (PDIs) having the formula 2PDI-nS, wherein n is an integer. Such sulfur-fused PDIs (e.g., 2PDI-2S, 2PDI-3S, and 2PDI-4S) are incorporated as electron acceptors in an active region of a bulk heterojunction solar cell and/or as an electron transport layer. Example solar cells exhibit a power conversion efficiency above 5% and a fill factor above 70% (a record high for non-fullerene bulk heterojunction solar cell devices) when 2PDI-nS is used as the electron acceptor. In addition, the solar cells exhibit low open circuit voltage (Voc) loss.

Abstract: Triazabicylodecene can effectively n-dope a variety of organic semiconductors, including PCBM, thus increasing in-plane conductivities. We synthesized a series of TBD-based n-dopants via an N-alkylation reaction and studied the effect of various alkyl chains on the physical and device properties of the dopants. Combining two TBD moieties on a long alky chain gave a solid dopant, 2TBD-C10, with high thermal stability above 250° C. PCBM films doped by 2TBD-C10 were the most tolerant to thermal annealing and reached in-plane conductivities of 6.5×10?2 S/cm. Furthermore, incorporating 2TBD-C10 doped PCBM as the electron transport layer (ETL) in methylammonium lead triiodide (MAPbI3) based photovoltaics led to a 23% increase in performance, from 11.8% to 14.5% PCE.

Abstract: Sulfur-fused perylene diimides (PDIs) having the formula 2PDI-nS, wherein n is an integer. Such sulfur-fused PDIs (e.g., 2PDI-2S, 2PDI-3S, and 2PDI-4S) are incorporated as electron acceptors in an active region of a bulk heterojunction solar cell and/or as an electron transport layer. Example solar cells exhibit a power conversion efficiency above 5% and a fill factor above 70% (a record high for non-fullerene bulk heterojunction solar cell devices) when 2PDI-nS is used as the electron acceptor. In addition, the solar cells exhibit low open circuit voltage (Voc) loss.

Abstract: A capsule type filter assembly provides increased strength by fixing ends caps of a filter element to a housing at both ends. At one end, a tubular part extends through a hole in the housing and is joined to the housing. An inner space of the tubular part communicates with the inner space of the filter element. In this configuration, the structural strength of the filter housing is enhanced by making the integrated body of the end caps and the filter element function as the reinforcing means for the housing.

Abstract: An in-line filter includes a hollow base having first and second wall portions formed between its ends and a filter element mounted on the base. During use, the base of the filter is disposed inside a standard tubing connector, and the wall portions are resiliently deformed by the tubing connector such that the surfaces of the wall portions are pressed into sealing contact with internal surfaces of the tubing connector. The filter element connected to the base is disposed inside the tubing connector and/or tubing to which the tubing connector is attached. According to another form of the invention, a filter element includes a hollow base having a radially outwardly extending flange. An annular sealing member is mounted on the flange, and a filter element is mounted on the base. During use, the base of the filter is disposed inside a standard tubing connector, and the sealing member is pressed into sealing contact with internal surfaces of the tubing connector and with the flange.