Abstract: A porous liquid crystal polymer sheet and a wiring circuit board have excellent handleability and excellent low repulsive properties. The porous liquid crystal polymer sheet 1 has a porosity P of 20% or more and 90% or less. The porous liquid crystal polymer sheet 1 has a thickness T of 1 ?m or more and 240 ?m or less.

Abstract: A porous liquid crystal polymer sheet and a wiring circuit board have excellent handleability and excellent low repulsive properties. The porous liquid crystal polymer sheet 1 has a porosity P of 20% or more and 90% or less. The porous liquid crystal polymer sheet 1 has a thickness T of 1 ?m or more and 240 ?m or less.

Abstract: An optical semiconductor device includes a metal lead frame including first and second plate portions, an optical semiconductor element mounted on the metal lead frame, and a reflector provided around the optical semiconductor element. A material for the reflector is an epoxy resin composition containing: (A) an epoxy resin; (B) a curing agent; (C) a white pigment; (D) an inorganic filler; and (E) at least one of a carboxylic acid and water. Components (C) and (D) are present in a total proportion of 69 to 94 wt % based on the amount of the overall epoxy resin composition, and the component (E) is present in a proportion of 4 to 23 mol % based on the total amount of the components (B) and (E). The resin composition has a higher glass transition temperature, and is excellent in moldability and blocking resistance and substantially free from warpage.

Abstract: An optical semiconductor device includes a metal lead frame including first and second plate portions, an optical semiconductor element mounted on the metal lead frame, and a reflector provided around the optical semiconductor element. A material for the reflector is an epoxy resin composition containing: (A) an epoxy resin; (B) a curing agent; (C) a white pigment; (D) an inorganic filler; and (E) at least one of a carboxylic acid and water. Components (C) and (D) are present in a total proportion of 69 to 94 wt % based on the amount of the overall epoxy resin composition, and the component (E) is present in a proportion of 4 to 23 mol % based on the total amount of the components (B) and (E). The resin composition has a higher glass transition temperature, and is excellent in moldability and blocking resistance and substantially free from warpage.

Abstract: The present invention relates to an epoxy resin composition for an optical semiconductor device having an optical semiconductor element mounting region and having a reflector that surrounds at least a part of the region, the epoxy resin composition being an epoxy resin composition for forming the reflector, the epoxy resin composition including the following ingredients (A) to (E): (A) an epoxy resin; (B) a curing agent; (C) a white pigment; (D) an inorganic filler; and (E) a specific release agent.

Abstract: A method for producing an encapsulating layer-covered semiconductor element includes the steps of preparing a support sheet including a hard support board; disposing a semiconductor element at one side in a thickness direction of the support sheet; disposing an encapsulating layer formed from an encapsulating resin composition containing a curable resin at the one side in the thickness direction of the support sheet so as to cover the semiconductor element; curing the encapsulating layer to encapsulate the semiconductor element by the encapsulating layer that is flexible; cutting the encapsulating layer that is flexible corresponding to the semiconductor element to produce an encapsulating layer-covered semiconductor element; and peeling the encapsulating layer-covered semiconductor element from the support sheet.

Abstract: The present invention relates to an epoxy resin composition for an optical semiconductor device having an optical semiconductor element mounting region and having a reflector that surrounds at least a part of the region, the epoxy resin composition being an epoxy resin composition for forming the reflector, the epoxy resin composition including the following ingredients (A) to (E): (A) an epoxy resin; (B) a curing agent; (C) a white pigment; (D) an inorganic filler; and (E) a specific release agent.

Abstract: The present invention relates to an epoxy resin composition for an optical semiconductor device having an optical semiconductor element mounting region and having a reflector that surrounds at least a part of the region, the epoxy resin composition being an epoxy resin composition for forming the reflector, the epoxy resin composition including the following ingredients (A) to (E): (A) an epoxy resin; (B) a curing agent; (C) a white pigment; (D) an inorganic filler; and (E) a specific release agent.

Abstract: A method for producing an encapsulating layer-covered semiconductor element includes the steps of preparing a support sheet including a hard support board formed with a through hole passing through in a thickness direction and a pressure-sensitive adhesive layer laminated on a surface at one side in the thickness direction of the support board so as to cover the through hole; disposing a semiconductor element on a surface at one side in the thickness direction of the pressure-sensitive adhesive layer in opposed to the through hole in the thickness direction; covering the semiconductor element with an encapsulating layer to produce an encapsulating layer-covered semiconductor element; and inserting a pressing member into the through hole from the other side in the thickness direction to peel the encapsulating layer-covered semiconductor element from the pressure-sensitive adhesive layer.

Abstract: A method for producing an encapsulating layer-covered semiconductor element includes the steps of preparing a support sheet including a hard support board formed with a through hole passing through in a thickness direction and a pressure-sensitive adhesive layer laminated on a surface at one side in the thickness direction of the support board so as to cover the through hole; disposing a semiconductor element on a surface at one side in the thickness direction of the pressure-sensitive adhesive layer in opposed to the through hole in the thickness direction; covering the semiconductor element with an encapsulating layer to produce an encapsulating layer-covered semiconductor element; and inserting a pressing member into the through hole from the other side in the thickness direction to peel the encapsulating layer-covered semiconductor element from the pressure-sensitive adhesive layer.

Abstract: A method for producing a phosphor layer-covered LED includes the steps of preparing a support sheet including a hard support board and a pressure-sensitive adhesive layer laminated at one surface in a thickness direction of the support board and having a pressure-sensitive adhesive force capable of being reduced by application of an active energy ray; attaching an LED to the support board via the pressure-sensitive adhesive layer; disposing a phosphor layer at the one surface in the thickness direction of the support board so as to cover the LED with the phosphor layer; cutting the phosphor layer corresponding to the LED to produce a phosphor layer-covered LED including the LED and the phosphor layer covering the LED; and peeling the phosphor layer-covered LED from the pressure-sensitive adhesive layer by applying an active energy ray at least from one side in the thickness direction to the pressure-sensitive adhesive layer.

Abstract: The present invention relates to an epoxy resin composition for an optical semiconductor device, including the following ingredients (A) to (E): (A) an epoxy resin; (B) a curing agent; (C) a white pigment; (D) an inorganic filler; and (E) a silane coupling agent, in which a total content of the ingredient (C) and the ingredient (D) is from 69 to 94% by weight of the whole of the epoxy resin composition, and the ingredient (E) is contained in an amount satisfying the specific conditions.

Abstract: A method for producing an encapsulating layer-covered semiconductor element includes the steps of preparing a support sheet including a hard support board; disposing a semiconductor element at one side in a thickness direction of the support sheet; disposing an encapsulating layer formed from an encapsulating resin composition containing a curable resin at the one side in the thickness direction of the support sheet so as to cover the semiconductor element; curing the encapsulating layer to encapsulate the semiconductor element by the encapsulating layer that is flexible; cutting the encapsulating layer that is flexible corresponding to the semiconductor element to produce an encapsulating layer-covered semiconductor element; and peeling the encapsulating layer-covered semiconductor element from the support sheet.

Abstract: A method for producing an encapsulating layer-covered semiconductor element includes the steps of preparing a support sheet including a hard support board formed with a through hole passing through in a thickness direction and a pressure-sensitive adhesive layer laminated on a surface at one side in the thickness direction of the support board so as to cover the through hole; disposing a semiconductor element on a surface at one side in the thickness direction of the pressure-sensitive adhesive layer in opposed to the through hole in the thickness direction; covering the semiconductor element with an encapsulating layer to produce an encapsulating layer-covered semiconductor element; and inserting a pressing member into the through hole from the other side in the thickness direction to peel the encapsulating layer-covered semiconductor element from the pressure-sensitive adhesive layer.

Abstract: A method for producing a phosphor layer-covered LED includes an LED disposing step of disposing an LED at one surface in a thickness direction of a support sheet; a layer disposing step of disposing a phosphor layer formed from a phosphor resin composition containing an active energy ray curable resin capable of being cured by application of an active energy ray and a phosphor at the one surface in the thickness direction of the support sheet so as to cover the LED; a curing step of applying an active energy ray to the phosphor layer to be cured; a cutting step of cutting the phosphor layer corresponding to the LED to produce a phosphor layer-covered LED including the LED and the phosphor layer covering the LED; and an LED peeling step of, after the cutting step, peeling the phosphor layer-covered LED from the support sheet.

Abstract: A method for producing a reflecting layer-phosphor layer-covered LED includes a disposing step of disposing a reflecting layer at one side in a thickness direction of a support; a reflecting layer covering step of, after the disposing step, disposing an LED having a terminal at one surface thereof at the one side in the thickness direction of the support so as to allow the one surface of the LED to be covered with the reflecting layer; and a phosphor layer covering step of forming a phosphor layer so as to cover at least the other surface of the LED.

Abstract: The present invention relates to an epoxy resin composition for an optical semiconductor device having an optical semiconductor element mounting region and having a reflector that surrounds at least a part of the region, the epoxy resin composition being an epoxy resin composition for forming the reflector, the epoxy resin composition including the following ingredients (A) to (E): (A) an epoxy resin; (B) a curing agent; (C) a white pigment; (D) an inorganic filler; and (E) a specific release agent.

Abstract: The present invention relates to an epoxy resin composition for an optical semiconductor device, including the following ingredients (A) to (E): (A) an epoxy resin; (B) a curing agent; (C) a white pigment; (D) an inorganic filler; and (E) a silane coupling agent, in which a total content of the ingredient (C) and the ingredient (D) is from 69 to 94% by weight of the whole of the epoxy resin composition, and the ingredient (E) is contained in an amount satisfying the specific conditions.

Abstract: A material for solid polymer electrolyte, made of a polyether polymer having a moisture content in the range of 400 to 5,000 ppm by weight. A formed solid polymer electrolyte, which is made by mixing the material for solid polymer electrolyte together with an electrolyte salt compound soluble in the polyether polymer, has good ionic conductivity and high mechanical strength. A polyether polymer having a moisture content not larger than 0.04% by weight and a toluene-insoluble content not larger than 5% by weight. This polyether polymer gives a formed solid polymer electrolyte having a smooth surface.

Abstract: A process for producing a polyether polymer composition, comprising incorporating an antioxidant insoluble in an organic solvent and/or a stabilizer soluble in the organic solvent, in a slurry containing a polyether polymer and the organic solvent to disperse or dissolve the antioxidant and/or stabilizer; and then, removing the organic solvent. Also provided a polyether polymer composition comprising a polyether polymer particle, and an antioxidant insoluble in an organic solvent incapable of dissolving the polymer particle, and/or a stabilizer soluble in the organic solvent; and satisfying at least one of the following requirements: (1) most of the antioxidant is deposited on the surface of polymer particle; (2) the polymer has a gel content of not larger than 5% by weight; and (3) most of the stabilizer exists within the polymer particle.