Abstract: A fluidized sand composition for use as a filling material for sinkholes and the like weakened ground cavities. The fluidized sand composition is produced by mixing graded sand, water, a fluidizer, a plasticizer, and a surface active agent. The fluidized sand composition is easily injected into the ground cavity of a sinkhole. After filling, the fluidized sand composition will return to the solid natural condition according to the effect of plasticizer previously added. The fluidized sand composition allows for compaction, soil stabilization, permits water migration through the material, and can be easily excavated.

Abstract: A fluidized sand composition for use as a filling material for sinkholes and the like weakened ground cavities. The fluidized sand composition is produced by mixing graded sand, water, a fluidizer, a plasticizer, and a surface active agent. The fluidized sand composition is easily injected into the ground cavity of a sinkhole. After filling, the fluidized sand composition will return to the solid natural condition according to the effect of plasticizer previously added. The fluidized sand composition allows for compaction, soil stabilization, permits water migration through the material, and can be easily excavated.

Abstract: The present invention provides a preventive and/or therapeutic agent for neutrophilic inflammatory diseases which comprises, as an active ingredient, a bicyclic heterocyclic compound represented by formula (I): [wherein R1 represents a hydrogen atom, substituted or unsubstituted alkyl, or the like, A1-A2-A3-A4 represents N?CR3—CR4?CR5 (wherein R3, R4, and R5 are the same or different and each represents a hydrogen atom, substituted or unsubstituted lower alkyl, and the like), Q represents substituted or unsubstituted phenylene, and the like, and T represents substituted or unsubstituted lower alkyl, substituted or unsubstituted aroyl, and the like].

Abstract: The invention provides a pyrimidodiazepinone derivative represented by the general formula (I) [wherein n represents 1 or 2, Z represents a hydrogen atom or the like, R1 and R2 may be the same or different, and each represents a hydrogen atom or the like, A represents a bond, (CH2)m (wherein m represents an integer of 1 to 4), optionally substituted phenylene, optionally substituted pyridinediyl, or C?O, R3 represents a hydrogen atom, optionally substituted lower alkyl, or the like, and R4 represents a hydrogen atom or the like], or a pharmaceutically acceptable salt thereof or the like.

Abstract: The present invention provides a preventive and/or therapeutic agent for neutrophilic inflammatory diseases which comprises as an active ingredient, a bicyclic heterocyclic compound represented by formula (I): [wherein R1 represents a hydrogen atom, substituted or unsubstituted alkyl, or the like, A1-A2-A3-A4 represents N?CR3—CR4?CR5 (wherein R3, R4, and R5 are the same or different and each represents a hydrogen atom, substituted or unsubstituted lower alkyl, and the like), Q represents substituted or unsubstituted phenylene, and the like, and T represents substituted or unsubstituted lower alkyl, substituted or unsubstituted aroyl, and the like].

Abstract: A parallel connection-type nonvolatile memory semiconductor device comprises a plurality of memory cells disposed on a semiconductor substrate in matrix form, each including a gate insulating film, a floating gate electrode, an interlayer film and a control gate electrode successively formed so as to cover a channel region on a main surface of the semiconductor substrate, of a first conductivity type; a second conductivity type source and drain regions formed on the semiconductor substrate on both sides opposite to each other, of the floating gate electrode so as to interpose a channel region located under the floating gate electrode therebetween; a first semiconductor region which is adjacent to the drain region and formed by introducing a second conductivity type impurity in the direction of the channel region placed under the floating gate electrode from an end on the drain side, of the floating gate electrode, and which is substantially lower than the drain region in impurity concentration; and a punch-th

Abstract: A parallel connection-type nonvolatile memory semiconductor device comprises a plurality of memory cells disposed on a semiconductor substrate in matrix form, each including a gate insulating film, a floating gate electrode, an interlayer film and a control gate electrode successively formed so as to cover a channel region on a main surface of the semiconductor substrate, of a first conductivity type; a second conductivity type source and drain regions formed on the semiconductor substrate on both sides opposite to each other, of the floating gate electrode so as to interpose a channel region located under the floating gate electrode therebetween; a first semiconductor region which is adjacent to the drain region and formed by introducing a second conductivity type impurity in the direction of the channel region placed under the floating gate electrode from an end on the drain side, of the floating gate electrode, and which is substantially lower than the drain region in impurity concentration; and a punch-th