Abstract: A modeling system (control device) includes a control unit that controls a modeling means to form each of stacked modeling layers, based on modeling data representing a three-dimensional model object that is a modeling target by use of a plurality of modeling layers, a determination unit that measures and determines whether or not a measured value of a stacked height of the formed modeling layer is within a predetermined range set beforehand and including a stacked height of the modeling layer in the modeling data, and in a case where the formed modeling layer has a lacking part in which the stacked height is not within the predetermined range, a correction unit that performs correction modeling by forming a correction member in the lacking part such that the stacked height is within the predetermined range.

Abstract: With an image processing device, a presence/absence of a product defect is judged based on detected-image data obtained by a radiographic device that detects radiation that has passed through a product, which is an inspection subject. With the image processing device, a position of a product feature in the detected-image data is identified based on a shape of the product feature indicated by feature data stored in a storage portion in advance, defect candidates are extracted with reference to the identified product feature in the detected-image data, and the presence/absence of a product defect is judged based on characteristic quantities of product defects indicated by a defect characteristic stored in the storage portion in advance and characteristic quantities of the defect candidates.

Abstract: A nitride semiconductor device includes: a substrate; a first nitride semiconductor layer (1) located over the substrate; a second nitride semiconductor layer (2) located over the first nitride semiconductor layer (1), having a larger band gap than the first nitride semiconductor layer (1), and having a recess (11) penetrating into the first nitride semiconductor layer (1); and a third nitride semiconductor layer (12) continuously covering the second nitride semiconductor layer (2) and the recess (11), and having a larger band gap than the first nitride semiconductor layer (1); a gate electrode (5) located above a portion of the third nitride semiconductor layer (12) over the recess (11); and a first ohmic electrode (4a) and a second ohmic electrode (4b) located on opposite sides of the gate electrode (5).

Abstract: A semiconductor device includes: a first nitride semiconductor layer; a second nitride semiconductor layer above the first nitride semiconductor layer and having a band gap larger than that of the first nitride semiconductor layer; a p-type nitride semiconductor layer above the second nitride semiconductor layer; two third nitride semiconductor layers of n-type above the second nitride semiconductor layer and located separately on either side of the p-type nitride semiconductor layer; and a first ohmic electrode above one of the two third nitride semiconductor layers and a second ohmic electrode above the other of the two third nitride semiconductor layers; and a gate electrode above the p-type nitride semiconductor layer. The second nitride semiconductor layer includes, in a region above which neither the p-type nitride semiconductor layer nor the two third nitride semiconductor layers is located, a surface layer including p-type impurities identical to those in the p-type nitride semiconductor layer.

Abstract: With an image processing device (20), the presence/absence of a product defect is judged based on detected-image data obtained by a radiographic device that detects radiation that has passed through a product, which is an inspection subject. With the image processing device (20), a position of a product feature in the detected-image data is identified based on a shape of the product feature indicated by feature data stored in a DB storage portion (36) in advance, defect candidates are extracted with reference to the identified product feature in the detected-image data, and the presence/absence of a product defect is judged based on characteristic quantities of product defects indicated by the defect characteristic DB stored in the DB storage portion (36) in advance and characteristic quantities of the defect candidates.

Abstract: A semiconductor device includes: a first nitride semiconductor layer; a second nitride semiconductor layer above the first nitride semiconductor layer and having a band gap larger than that of the first nitride semiconductor layer; a p-type nitride semiconductor layer above the second nitride semiconductor layer; two third nitride semiconductor layers of n-type above the second nitride semiconductor layer and located separately on either side of the p-type nitride semiconductor layer; and a first ohmic electrode above one of the two third nitride semiconductor layers and a second ohmic electrode above the other of the two third nitride semiconductor layers; and a gate electrode above the p-type nitride semiconductor layer. The second nitride semiconductor layer includes, in a region above which neither the p-type nitride semiconductor layer nor the two third nitride semiconductor layers is located, a surface layer including p-type impurities identical to those in the p-type nitride semiconductor layer.

Abstract: A nitride semiconductor device includes: a substrate; a first nitride semiconductor layer (1) located over the substrate; a second nitride semiconductor layer (2) located over the first nitride semiconductor layer (1), having a larger band gap than the first nitride semiconductor layer (1), and having a recess (11) penetrating into the first nitride semiconductor layer (1); and a third nitride semiconductor layer (12) continuously covering the second nitride semiconductor layer (2) and the recess (11), and having a larger band gap than the first nitride semiconductor layer (1); a gate electrode (5) located above a portion of the third nitride semiconductor layer (12) over the recess (11); and a first ohmic electrode (4a) and a second ohmic electrode (4b) located on opposite sides of the gate electrode (5).

Abstract: In the method for manufacturing a heterojunction bipolar transistor, a collector contact layer, a collector layer, a base layer, a base protection layer, an emitter layer, an emitter contact layer, and a WSi layer are sequentially formed on a substrate. A resist pattern is then formed on the WSi layer, and the WSi layer is patterned by using the resist pattern as a mask. Thereafter, the emitter contact layer and the emitter layer are sequentially removed by ICP (Inductively Coupled Plasma) dry etching by using the resist pattern as a mask.

Abstract: The present invention provides a polishing sheet that can secure a flatness of a material to be polished and can improve a polishing efficiency. A polishing pad 1 has a polyurethane sheet 2 made of polyurethane resin. The polyurethane sheet 2 has large cells 3 with a generally triangular sectional configuration rounded along a thickness direction thereof. Polyurethane resin exists in the polyurethane sheet 2 in a partition wall manner and fine foams 4 are formed in the polyurethane resin. Fine particles 5 added during manufacture of the polyurethane sheet 2 exist inside some of the fine foams 4 and the fine particles 5 are separable from the fine foams. By separating off fine particles positioned at a polishing face P by dummy polishing or the like, fine foams which evenly reserve a polishing liquid containing abrasive particles are formed at the polishing face P.

Abstract: The present invention provides a polishing sheet that can secure a flatness of a material to be polished and can improve a polishing efficiency. A polishing pad 1 has a polyurethane sheet 2 made of polyurethane resin. The polyurethane sheet 2 has large cells 3 with a generally triangular sectional configuration rounded along a thickness direction thereof. Polyurethane resin exists in the polyurethane sheet 2 in a partition wall manner and fine foams 4 are formed in the polyurethane resin. Fine particles 5 added during manufacture of the polyurethane sheet 2 exist inside some of the fine foams 4 and the fine particles 5 are separable from the fine foams. By separating off fine particles positioned at a polishing face P by dummy polishing or the like, fine foams which evenly reserve a polishing liquid containing abrasive particles are formed at the polishing face P.

Abstract: In the method for manufacturing a heterojunction bipolar transistor, a collector contact layer, a collector layer, a base layer, a base protection layer, an emitter layer, an emitter contact layer, and a WSi layer are sequentially formed on a substrate. A resist pattern is then formed on the WSi layer, and the WSi layer is patterned by using the resist pattern as a mask. Thereafter, the emitter contact layer and the emitter layer are sequentially removed by ICP (Inductively Coupled Plasma) dry etching by using the resist pattern as a mask.

Abstract: In the method for manufacturing a heterojunction bipolar transistor, a collector contact layer, a collector layer, a base layer, a base protection layer, an emitter layer, an emitter contact layer, and a WSi layer are sequentially formed on a substrate. A resist pattern is then formed on the WSi layer, and the WSi layer is patterned by using the resist pattern as a mask. Thereafter, the emitter contact layer and the emitter layer are sequentially removed by ICP (Inductively Coupled Plasma) dry etching by using the resist pattern as a mask.

Abstract: In the method for manufacturing a heterojunction bipolar transistor, a collector contact layer, a collector layer, a base layer, a base protection layer, an emitter layer, an emitter contact layer, and a WSi layer are sequentially formed on a substrate. A resist pattern is then formed on the WSi layer, and the WSi layer is patterned by using the resist pattern as a mask. Thereafter, the emitter contact layer and the emitter layer are sequentially removed by ICP (Inductively Coupled Plasma) dry etching by using the resist pattern as a mask.

Abstract: A disk player which can insert and extract a disk, while a disk is being played, into and out of a compact body. During a movement in which one of disk trays is being moved from a disk standby position to a disk playing position, the disk comes into engagement with a disk playing means supporting mechanism to move the disk playing means in a predetermined direction.

Abstract: A information-recording apparatus is provided with: a first programming device that is used for programming the execution of the recording processes of recording to the medium and the other medium; a second programming device that is used for programming the execution of the detection/recording process that uses the other medium entered start time information that indicates the start time for executing the detection/recording process; a calculation device which calculates the end time for the detection/recording process based on the information that is the object of the detection/recording process, and the input start time information; a judgment device which determines, based on end time information that indicates the calculated end time and the entered start time information, whether or not the recording process of recording onto the other medium and the detection/recording process are programmed to be executed at the same time; and an output device which outputs notification information.

Abstract: An editing apparatus which edits the processes of at least a reproduction/recording process that re-records information that is reproduced from a recording medium to that recording medium itself, or a reproduction/recording process that re-records said reproduced information to other recording medium, is provided with: a judgment device which determines whether or not it is possible to execute said reproduction/recording process based on the recorded state of said information that is approved for at least said recording medium or said other recording medium before executing an editing process of said processes; and an output device which outputs notification information to the outside in order to notify of said judgment results before execution of said editing process.

Abstract: The present invention provides a polishing sheet that can secure a flatness of a material to be polished and can improve a polishing efficiency. A polishing pad 1 has a polyurethane sheet 2 made of polyurethane resin. The polyurethane sheet 2 has large cells 3 with a generally triangular sectional configuration rounded along a thickness direction thereof. Polyurethane resin exists in the polyurethane sheet 2 in a partition wall manner and fine foams 4 are formed in the polyurethane resin. Fine particles 5 added during manufacture of the polyurethane sheet 2 exist inside some of the fine foams 4 and the fine particles 5 are separable from the fine foams. By separating off fine particles positioned at a polishing face P by dummy polishing or the like, fine foams which evenly reserve a polishing liquid containing abrasive particles are formed at the polishing face P.