Abstract: A method for manufacturing a laminated structure includes a step of supplying a droplet of a functional fluid selectively to at least a first region of a high surface energy area formed in a wettability variable layer of the laminated structure. In the step, the droplet is supplied by inkjet printing, and a center position of the droplet is determined in such a manner as to satisfy both Equations (1) and (2) below: X<±(L+2S?D?2?)/2 (here, L+2S>D+2?) ??(1) X<±(L+D?2?)/2 (here, L+2D>D+2?) ??(2), where X is a distance between a center position of the first region and the center position of the droplet, D is a diameter of the droplet when travelling, ? is variation in a landing position of the droplet, L is width of the first region, and S is a gap between the first and the second regions.

Abstract: A disclosed fixing device includes a fixer application unit configured to apply a fixer containing a softener, capable of softening resin by dissolving or swelling at least a part of the resin, and water to resin particles formed on a recording medium such that the resin particles are fixed on the recording medium, and an anti-tack agent application unit configured to apply a liquid anti-tack agent immiscible with the softener to surfaces of the resin particles that are mixed with the softener by the application of the fixer containing the softener.

Abstract: A disclosed laminated structure includes a wettability-variable layer containing a wettability-variable material whose surface energy changes when energy is applied thereto and including at least a high-surface-energy area having high surface energy and a low-surface-energy area having low surface energy; and a conductive layer formed on the high-surface-energy area. The high-surface-energy area includes a first area and a second area extending from the first area and having a width smaller than that of the first area.

Abstract: A layered structure comprises a variable wettability layer including a material that changes a critical surface tension in response to energy provided thereto, the wettability changing layer including at least a high surface energy part of large critical surface tension and a low surface energy part of low critical surface tension, a conductive layer formed on the variable wettability layer at the high surface energy tension part, and a semiconductor layer formed on the variable wettability layer at the low surface energy part.

Abstract: To provide a fixing solution for fixing fine resin particles to a recording medium, the fixing solution including: a diluent which contains water; a foaming agent which allows the fixing solution to be in the form of foam; and a solid plasticizer which is solid at normal temperature and soluble in the diluent, and which softens or swells at least part of the fine resin particles while dissolved in the diluent.

Abstract: A wiring pattern is disclosed including: a variable wettability layer including a material whose critical surface tension changes in response to energy provided thereto, the wettability changing layer including a high surface energy part exhibiting a high critical surface tension and a low surface energy part exhibiting low critical surface tension; and a conductive pattern layer formed on the variable wettability layer at the high surface energy part. The conductive pattern layer has an elongated shape with a chamfered corner part in a plan view.

Abstract: A fixing solution for fixing toner to a recording medium, includes aliphatic ester held by solvent in a soluble manner, and having solubility or swelling property with respect to resin included in the toner.

Abstract: An organic transistor includes a substrate; a gate electrode and a gate insulating film sequentially formed on the substrate in the stated order; and a source electrode, a drain electrode, and an organic semiconductor layer formed on at least the gate insulating film. Ultraviolet light is radiated to the substrate from a side without the gate electrode, transmitted through the substrate and the gate insulating film, reflected at the gate electrode, and absorbed at the organic semiconductor layer. Conductivity of the organic semiconductor layer that has absorbed the ultraviolet light is lower than that of the organic semiconductor layer that has not absorbed the ultraviolet light.

Abstract: A laminate structure is disclosed that has a region having high surface free energy and a region having low surface free energy that are well separated, has high adhesiveness between an underlying layer and a conductive layer, and can be formed easily with low cost. The laminate structure includes a wettability-variable layer including a first surface free energy region of a first film thickness and a second surface free energy region of a second film thickness, and a conductive layer formed on the second surface free energy region of the wettability-variable layer. The second film thickness is less than the first film thickness and the surface free energy of the second surface free energy region is made higher than the surface free energy of the first surface free energy region by applying a predetermined amount of energy on the second surface free energy region.

Abstract: A fixing solution for fixing toner to a recording medium, includes aliphatic ester held by solvent in a soluble manner, and having solubility or swelling property with respect to resin included in the toner.

Abstract: A layered structure comprises a variable wettability layer including a material that changes a critical surface tension in response to energy provided thereto, the wettability changing layer including at least a high surface energy part of large critical surface tension and a low surface energy part of low critical surface tension, a conductive layer formed on the variable wettability layer at the high surface energy tension part, and a semiconductor layer formed on the variable wettability layer at the low surface energy part.

Abstract: A layered structure comprises a variable wettability layer including a material that changes a critical surface tension in response to energy provided thereto, the wettability changing layer including at least a high surface energy part of large critical surface tension and a low surface energy part of low critical surface tension, a conductive layer formed on the variable wettability layer at the high surface energy tension part, and a semiconductor layer formed on the variable wettability layer at the low surface energy part.

Abstract: An aryl amine polymer is provided which contains a specific repeat unit, its use in preparing an organic semiconductor material which contains the aryl amine polymer and an additional specific compound and in the preparation of organic light emitting devices (OLED), organic thin film transistors (TFT) and so on, along with an organic TFT including a substrate, an organic semiconductor layer which contains the organic semiconductor material and is located overlying the substrate, an electrode pair of a source electrode and a drain electrode; and a third electrode.

Abstract: A fixing solution for fixing toner to a recording medium, includes aliphatic ester held by solvent in a soluble manner, and having solubility or swelling property with respect to resin included in the toner.

Abstract: An electronic device includes a substrate, a first conductive material layer formed on the substrate, a patterning layer formed on the first conductive material layer, the patterning layer including first and second patterning layer parts having different critical surface tension, an insulation layer formed on the second patterning layer part of the patterning layer, the insulation layer including first and second insulation layer parts having different critical surface tension, and a second conductive material layer formed on the first patterning layer part and the first insulation layer part.

Abstract: A disclosed laminated structure includes a wettability variable layer containing a wettability variable material whose surface energy changes when energy is applied thereto and including at least a high surface energy area having high surface energy and a low surface energy area having low surface energy; and a conductive layer disposed on the high surface energy area. The conductive layer includes a first high surface energy area, a second high surface energy area smaller in width than the first high surface energy area, and a third high surface energy area smaller in width than the second high surface energy area. The first high surface energy area and the second high surface energy area are connected by the third high surface energy area.

Abstract: An organic thin film transistor is disclosed. The organic thin film transistor includes a substrate, a gate electrode , a gate insulating film , a source electrode on the gate insulating film, a drain electrode on the gate insulating film at an interval with the source electrode, and an organic semiconductor layer. The gate insulating film includes an electrode formation region having surface energy modified by energy deposition, one or more corners of the electrode formation region has an obtuse-angled shape, and the source electrode and/or the drain electrode is formed in the electrode formation region so as to have substantially the same corner shape as the electrode formation region having the obtuse-angled shaped corners.

Abstract: A wiring pattern is disclosed including: a variable wettability layer including a material whose critical surface tension changes in response to energy provided thereto, the wettability changing layer including a high surface energy part exhibiting a high critical surface tension and a low surface energy part exhibiting low critical surface tension; and a conductive pattern layer formed on the variable wettability layer at the high surface energy part. The conductive pattern layer has an elongated shape with a chamfered corner part in a plan view.

Abstract: A disclosed laminated structure includes a wettability-variable layer containing a wettability-variable material whose surface energy changes when energy is applied thereto and including at least a high-surface-energy area having high surface energy and a low-surface-energy area having low surface energy; and a conductive layer formed on the high-surface-energy area. The high-surface-energy area includes a first area and a second area extending from the first area and having a width smaller than that of the first area.

Abstract: An aryl amine polymer is provided which contains a specific repeat unit, its use in preparing an organic semiconductor material which contains the aryl amine polymer and an additional specific compound and in the preparation of organic light emitting devices (OLED), organic thin film transistors (TFT) and so on, along with an organic TFT including a substrate, an organic semiconductor layer which contains the organic semiconductor material and is located overlying the substrate, an electrode pair of a source electrode and a drain electrode; and a third electrode.