Abstract: An ink jet head is provided with heaters to generate energy to be utilized for discharging ink, and MOS transistors to supply electric power to the heaters for recording by discharging ink. For this ink jet head, the MOS transistors comprise source regions and drain regions formed by doping layers arranged near the surface of a semiconductor substrate, gates formed on the semiconductor substrate through an oxide film and arranged to cross over the source regions and the drain regions, and contact units formed by a doping layer different from that of the source regions, and arranged near the surface within the source regions in order to draw out electrons or holes to be unintentionally generated on the semiconductor substrate. With the structure thus arranged, the potential difference becomes smaller between the source regions and back gate area on the semiconductor substrate, making it possible to prevent heaters from being destroyed by any excessive current that may flow uncontrollably.

Abstract: An Si semiconductor device has an emitter region, a base region and a collector region formed on a substrate substantially in parallel to a plane of the substrate. And at least one of the emitter region the base region and the collector region includes an SiGe mixed crystal semiconductor region formed by ion implantation of Ge.

Abstract: A bipolar transistor having a control electrode area of a semiconductor of a first conductive type, and first and second main electrode areas positioned in contact with the control electrode area and composed of a semiconductor of a second conductive type different from the first conductive type, comprises, for the purpose of preventing depletion of the surface of the control electrode area and suppressing or annulating the current generated in the surfacial depletion area, an electrode for controlling the surface state of the control electrode area, positioned, across an insulation film, on the surface of the control electrode area including the vicinity of the junction between the control electrode area and the above-mentioned first main electrode area.

Abstract: A semiconductor device comprises an insulating region residing adjacent to a first semiconductor region, a control electrode residing via the insulating region, a second semiconductor region and a third semiconductor region, which have an opposite conduction type to that of the first semiconductor region, residing adjacent to and carrying therebetween the first semiconductor region. When the first, second and third semiconductor regions and the control electrode are grounded, the first semiconductor region in contact with the insulating layer is adjusted to be in weak inversion state, and the potential of the control electrode and that of the first semiconductor region are electrically coupled to be operable.

Abstract: A vacuum wall crawler is provided with a pair of endless belts at both sides of the frame, the pair of endless belts having at their outer surfaces a plurality of recesses each of which has a through hole. Air in the recesses is sucked through suction chambers, each corresponding to one of the recesses, by an ejector independently provided in conformity with the suction chambers.