Abstract: A work processing apparatus performs processing of a surface to be processed of a work by causing a processing head to come into sliding contact with the work held on an upper surface of a holding plate. The processing head includes a plasma electrode that generates plasma and radiates the plasma to the surface to be processed of the work. In the plasma electrode, an annular or solid cylindrical central electrode provided at a center in a radial direction and an annular outer circumferential electrode provided at an outer side in the radial direction with respect to the central electrode are arranged with an annular slit portion intermediating therebetween at a boundary position thereof, the slit portion is configured as a plasma generation space, and a processing pad is provided at bottom surfaces of the central electrode and the outer circumferential electrode.

Abstract: Provided are a structure for producing a high-quality single crystal diamond, and a method for manufacturing the structure for producing diamond. A structure for producing a diamond is composed of a base substrate and an Ir thin film formed on the base substrate. The thermal expansion coefficient of the base substrate is 5 times or less of the thermal expansion coefficient of diamond and the melting point of the base substrate is 700° C. or higher. The peak angle in the X-ray diffraction pattern of the Ir thin film is different from the peak angle in the X-ray diffraction pattern of the base substrate.

Abstract: The crystal plane in the interior of the diamond substrate has a curvature higher than 0 km?1 and equal to or lower than 1500 km1 by preparing a base substrate, forming a plurality of pillar-shaped diamonds formed of diamond single crystals on one side of the base substrate, causing diamond single crystals to grow from tips of each pillar-shaped diamond, coalescing each of the diamond single crystals grown from the tips of each pillar-shaped diamond to form a diamond substrate layer, separating the diamond substrate layer from the base substrate, and manufacturing the diamond substrate from the diamond substrate layer.

Abstract: A diamond substrate is formed of diamond single crystals by preparing a base substrate; forming plural pillar-shaped diamonds formed of diamond single crystals on one side of the base substrate; causing a diamond single crystal to grow from a tip of each pillar-shaped diamond and coalescing the diamond single crystals growing from the tips of the pillar-shaped diamonds to form a diamond substrate layer; separating the diamond substrate layer from the base substrate; and manufacturing a diamond substrate from the diamond substrate layer, a shape in an in-plane direction of the diamond substrate is a circular shape or a circular shape having an orientation flat plane formed therein and has a diameter of two inches or more.

Abstract: The crystal plane in the interior of the diamond substrate has a curvature higher than 0 km?1 and equal to or lower than 1500 km?1 by preparing a base substrate, forming a plurality of pillar-shaped diamonds formed of diamond single crystals on one side of the base substrate, causing diamond single crystals to grow from tips of each pillar-shaped diamond, coalescing each of the diamond single crystals grown from the tips of each pillar-shaped diamond to form a diamond substrate layer, separating the diamond substrate layer from the base substrate, and manufacturing the diamond substrate from the diamond substrate layer.

Abstract: The crystal plane in the interior of the diamond substrate has a curvature higher than 0 km?1 and equal to or lower than 1500 km?1 by preparing a base substrate, forming a plurality of pillar-shaped diamonds formed of diamond single crystals on one side of the base substrate, causing diamond single crystals to grow from tips of each pillar-shaped diamond, coalescing each of the diamond single crystals grown from the tips of each pillar-shaped diamond to form a diamond substrate layer, separating the diamond substrate layer from the base substrate, and manufacturing the diamond substrate from the diamond substrate layer.

Abstract: A diamond substrate is formed of diamond single crystals by preparing a base substrate; forming plural pillar-shaped diamonds formed of diamond single crystals on one side of the base substrate; causing a diamond single crystal to grow from a tip of each pillar-shaped diamond and coalescing the diamond single crystals growing from the tips of the pillar-shaped diamonds to form a diamond substrate layer; separating the diamond substrate layer from the base substrate; and manufacturing a diamond substrate from the diamond substrate layer, a shape in an in-plane direction of the diamond substrate is a circular shape or a circular shape having an orientation flat plane formed therein and has a diameter of two inches or more.

Abstract: A diamond substrate is formed of diamond single crystals by preparing a base substrate; forming plural pillar-shaped diamonds formed of diamond single crystals on one side of the base substrate; causing a diamond single crystal to grow from a tip of each pillar-shaped diamond and coalescing the diamond single crystals growing from the tips of the pillar-shaped diamonds to form a diamond substrate layer; separating the diamond substrate layer from the base substrate; and manufacturing a diamond substrate from the diamond substrate layer, a shape in an in-plane direction of the diamond substrate is a circular shape or a circular shape having an orientation flat plane formed therein and has a diameter of two inches or more.

Abstract: Provided is a self-support diamond substrate made of diamond and a method for producing such a substrate. A foundation substrate is prepared, several pieces of columnar diamond made of diamond single crystal are formed over one surface of the foundation substrate, the diamond single crystal is grown from the tip of each piece of columnar diamond, each piece of diamond single crystal is brought into coalescence to form a diamond substrate layer, the diamond substrate layer is separated from the foundation substrate, and the diamond substrate is produced from the diamond substrate layer. The difference between the highest point and the lowest point in the thickness direction of the diamond substrate is more than 0 ?m and 485 ?m or less and the variation of the angle of the crystal axis over the entire surface of the diamond substrate is more than 0° and 3.00° or less.

Abstract: The crystal plane in the interior of the diamond substrate has a curvature higher than 0 km?1 and equal to or lower than 1500 km?1 by preparing a base substrate, forming a plurality of pillar-shaped diamonds formed of diamond single crystals on one side of the base substrate, causing diamond single crystals to grow from tips of each pillar-shaped diamond, coalescing each of the diamond single crystals grown from the tips of each pillar-shaped diamond to form a diamond substrate layer, separating the diamond substrate layer from the base substrate, and manufacturing the diamond substrate from the diamond substrate layer.

Abstract: Provided is a composite substrate manufacturing method, including at least: a first raw board deforming step of preparing a first substrate by deforming a first raw board having at least one surface as a minor surface into a state in which the minor surface warps outward; and a joining step of joining, after the first raw board deforming step, a protruding surface of the first substrate and one surface of a second substrate to each other, thereby manufacturing a composite substrate including the first substrate and the second substrate, in which the second substrate is any one substrate selected from a substrate having both surfaces as substantially flat surfaces and a substrate that warps so that a surface thereof to be joined to the first substrate warps outward. Also provided are a semiconductor element manufacturing method, a composite substrate and a semiconductor element manufactured.

Abstract: In order to correct warpage resulting from the formation of a multilayer film, provided are a single crystal substrate which includes a heat-denatured layer provided in one of two regions including a first region and a second region obtained by bisecting the single crystal substrate in a thickness direction thereof, and which is warped convexly toward a side of a surface of the region provided with the heat-denatured layer, a manufacturing method for the single crystal substrate, a manufacturing method for a single crystal substrate with a multilayer film using the single crystal substrate, and an element manufacturing method using the manufacturing method for a single crystal substrate with a multilayer film.

Abstract: A diamond substrate is formed of diamond single crystals by preparing a base substrate; forming plural pillar-shaped diamonds formed of diamond single crystals on one side of the base substrate; causing a diamond single crystal to grow from a tip of each pillar-shaped diamond and coalescing the diamond single crystals growing from the tips of the pillar-shaped diamonds to form a diamond substrate layer; separating the diamond substrate layer from the base substrate; and manufacturing a diamond substrate from the diamond substrate layer, a shape in an in-plane direction of the diamond substrate is a circular shape or a circular shape having an orientation flat plane formed therein and has a diameter of two inches or more.

Abstract: A substrate having a desired pattern on a plane thereof and a method for manufacturing same, a light-emitting element and a method for manufacturing same, and a device having the substrate or the light-emitting element are provided which allow the pattern to be formed without any photoresist film, enabling a reduction in the number of steps and a reduction in costs associated with the reduction in the number of steps. A flat substrate is prepared, a dielectric containing a photosensitive agent is formed on a plane of the substrate, the dielectric is patterned to form a desired pattern on the substrate plane, thus, a substrate is obtained which has a pattern of island-shaped protrusions on the plane of the flat substrate and in which the protrusions are configured of the dielectric.

Abstract: Provided is a technology capable of simply manufacturing a GaN substrate, which is constituted by a GaN crystal having a substantially uniform dislocation density distribution, without using a complicated process, at low cost and at a high yield ratio. An inside of a single crystal substrate is irradiated with a laser to form an amorphous portion on the inside of the single crystal substrate, and a GaN crystal is formed on a one surface of the single crystal substrate to prepare a GaN substrate. A dislocation density distribution over the entirety of a surface of the GaN substrate that is prepared is substantially uniform. The amorphous portion is provided in a plurality of linear patterns in a planar direction of the single crystal substrate, and in a case where a pitch between respective patterns is 0.5 mm, a volume ratio of a total volume of the amorphous portion to a volume of the single crystal substrate is 0.10% or 0.20%. In a case where the pitch between the respective patterns is 1.

Abstract: Provided are a single-crystal substrate for epitaxial growth on which a crystalline film may be formed with stress thereon being suppressed or eliminated, a single-crystal substrate having a crystalline film, a crystalline film, a method of producing a single-crystal substrate having a crystalline film, a method of producing a crystalline substrate, and an element producing method. The single-crystal substrate has a roughened surface formed on at least a partial region of a surface of the single-crystal substrate. And in order to obtain the single-crystal substrate having a crystalline film, a single-crystalline film is formed by epitaxial growth on a roughened-surface unformed surface on which the roughened surface is not formed, and a crystalline film having low crystallinity than the single-crystalline film is formed by epitaxial growth on a roughened-surface formed surface of the single-crystal substrate.

Abstract: Provided are a method of manufacturing a light-emitting element by which a light-emitting element (80) is manufactured through the following steps and a light-emitting element manufactured by employing the method. A light-emitting element layer (40) is formed on one face (32T) of a monocrystalline substrate (30A) for a light-emitting element. Next, the other face (32B) of the monocrystalline substrate (30A) for a light-emitting element is polished until a state where a vertical hole (34A) penetrates the monocrystalline substrate (30A) for a light-emitting element in its thickness direction is established. Next, a conductive material is filled into the vertical hole (34B) from the side of the vertical hole (34B) closer to an opening (36B) in the other face (32B) to form a conductive portion (50) that is continuous from a side closer to the light-emitting element layer (40) to the opening (36B) in the other face (32B).

Abstract: Provided is a gallium oxide single crystal and a gallium oxide single crystal substrate that can improve the luminous efficiency. In a gallium oxide single crystal 13, the dislocation density is less than or equal to 3.5×106/cm2. The gallium oxide single crystal 13 is manufactured by the EFG method. Further, the seed touch temperature in the EFG method is greater than or equal to 1930 degrees centigrade and less than or equal to 1950 degrees centigrade. A neck part 13a of the gallium oxide single crystal 13 is less than or equal to 0.8 mm. A gallium oxide single crystal substrate 21 is made of the gallium oxide single crystal 13.

Abstract: Provided is a composite substrate manufacturing method, including at least: a first raw board deforming step of preparing a first substrate by deforming a first raw board having at least one surface as a minor surface into a state in which the minor surface warps outward; and a joining step of joining, after the first raw board deforming step, a protruding surface of the first substrate and one surface of a second substrate to each other, thereby manufacturing a composite substrate including the first substrate and the second substrate, in which the second substrate is any one substrate selected from a substrate having both surfaces as substantially flat surfaces and a substrate that warps so that a surface thereof to be joined to the first substrate warps outward. Also provided are a semiconductor element manufacturing method, a composite substrate and a semiconductor element manufactured.

Abstract: Provided are a method of manufacturing a light-emitting element by which a light-emitting element (80) is manufactured through the following steps and a light-emitting element manufactured by employing the method. A light-emitting element layer (40) is formed on one face (32T) of a monocrystalline substrate (30A) for a light-emitting element. Next, the other face (32B) of the monocrystalline substrate (30A) for a light-emitting element is polished until a state where a vertical hole (34A) penetrates the monocrystalline substrate (30A) for a light-emitting element in its thickness direction is established. Next, a conductive material is filled into the vertical hole (34B) from the side of the vertical hole (34B) closer to an opening (36B) in the other face (32B) to form a conductive portion (50) that is continuous from a side closer to the light-emitting element layer (40) to the opening (36B) in the other face (32B).