Abstract: The present disclosure provides a freeze-drying container which includes a container body storing liquid to be freeze-dried and a first heat transfer body being in contact with the liquid to be freeze-dried and a cold source and in which the container body is a non-heat transfer body or a second heat transfer body of which at least a part is in contact with a liquid surface of the liquid to be freeze-dried and the cold source and at least one of a first shortest distance between an arbitrary point on the liquid surface of the liquid to be freeze-dried and the first heat transfer body or a second shortest distance in the liquid surface between the arbitrary point on the liquid surface of the liquid to be freeze-dried and the second heat transfer body is 20 mm or less.

Abstract: An object of the present invention is to provide a method for producing a gelatin formed body having a minimized content of a component harmful to a living body and high biocompatibility with high shaping accuracy, and a gelatin formed body produced by the method. According to the present invention, provided is a method for producing a gelatin formed body, the method including: a step a of forming, on a substrate, a layer containing a powder which is obtained by air-drying an aqueous gelatin solution and has an average particle diameter of 25 to 200 ?m; and a step b of jetting liquid droplets of an aqueous solution containing alcohols having a boiling point of 120° C. or lower toward the layer formed in the step a from a nozzle and flying the jetted liquid droplets so that the liquid droplets are landed on the layer formed in the step a, thereby forming a gelatin formed body.

Abstract: A tissue repair material includes gelatin granules, and the tissue repair material exhibits a water absorptivity of 800% by mass or more, and a residual ratio of 60% by mass or less after three hours of decomposition treatment using 1 mol/L hydrochloric acid. A block-shaped tissue repair material includes gelatin, and the block-shaped tissue repair material exhibits a water absorptivity of 800% by mass or more, and a residual ratio of 60% by mass or less after three hours of decomposition treatment using 1 mol/L hydrochloric acid.

Abstract: Provided are a method for rapidly producing a calcium phosphate molded article having high strength with high shaping precision, a calcium phosphate molded article produced by the method, and a material for transplantation. Disclosed is a method for producing a calcium phosphate molded article, the method including: step (a) of forming a layer containing a calcium phosphate powder having a ratio of the numbers of atoms of Ca/P of 1.4 to 1.8 on a substrate; and step (b) of producing a calcium phosphate molded article by jetting an organic acid solution having a pH of 3.5 or lower and including an organic acid whose calcium salt has a solubility in water of 1 g/100 mL or less, through a nozzle unit into a liquid droplet state, thereby dropping the organic acid solution onto the layer containing a calcium phosphate powder formed in step (a).

Abstract: Provided are a method for rapidly producing a calcium phosphate molded article having high strength with high shaping precision, a calcium phosphate molded article produced by the method, and a material for transplantation. Disclosed is a method for producing a calcium phosphate molded article, the method including: step (a) of forming a layer containing a calcium phosphate powder having a ratio of the numbers of atoms of Ca/P of 1.4 to 1.8 on a substrate; and step (b) of producing a calcium phosphate molded article by jetting an organic acid solution having a pH of 3.5 or lower and including an organic acid whose calcium salt has a solubility in water of 1 g/100 mL or less, through a nozzle unit into a liquid droplet state, thereby dropping the organic acid solution onto the layer containing a calcium phosphate powder formed in step (a).

Abstract: An object of the present invention is to provide a method for producing a gelatin formed body having a minimized content of a component harmful to a living body and high biocompatibility with high shaping accuracy, and a gelatin formed body produced by the method. According to the present invention, provided is a method for producing a gelatin formed body, the method including: a step a of forming, on a substrate, a layer containing a powder which is obtained by air-drying an aqueous gelatin solution and has an average particle diameter of 25 to 200 ?m; and a step b of jetting liquid droplets of an aqueous solution containing alcohols having a boiling point of 120° C. or lower toward the layer formed in the step a from a nozzle and flying the jetted liquid droplets so that the liquid droplets are landed on the layer formed in the step a, thereby forming a gelatin formed body.

Abstract: It is an object of the present invention to provide a cell construct for cell transplantation that does not contain a substance having cytotoxicity, such as glutaraldehyde, and suppresses the necrosis of the transplanted cells in the construct (namely, having a high cell survival rate). The present invention provides a cell construct for cell transplantation comprising biocompatible polymer blocks that do not contain glutaraldehyde and at least one type of cells, wherein a plurality of biocompatible polymer blocks are disposed in gaps among a plurality of cells, and wherein the biocompatible polymer blocks have a tap density of 10 mg/cm3 or more and 500 mg/cm3 or less, or the value of the square root of the cross-sectional area/boundary length in the two-dimensional sectional image of the polymer block is 0.01 or more and 0.13 or less.

Abstract: A cleaning composition for removing plasma etching residue and/or ashing residue formed above a semiconductor substrate is provided that includes (component a) water, (component b) a hydroxylamine and/or a salt thereof, (component c) a basic organic compound, and (component d) an organic acid and has a pH of 7 to 9. There are also provided a cleaning process and a process for producing semiconductor device employing the cleaning composition.

Abstract: A cleaning method is provided that includes a step of preparing a cleaning composition containing 57 to 95 wt % of (component a) water, 1 to 40 wt % of (component b) a secondary hydroxy group- and/or tertiary hydroxy group-containing hydroxy compound, (component c) an organic acid, and (component d) a quaternary ammonium compound, the composition having a pH of 5 to 10, and a step of removing plasma etching residue formed above a semiconductor substrate by means of the cleaning composition.

Abstract: A tissue repair material includes gelatin granules, and the tissue repair material exhibits a water absorptivity of 800% by mass or more, and a residual ratio of 60% by mass or less after three hours of decomposition treatment using 1 mol/L hydrochloric acid. A block-shaped tissue repair material includes gelatin, and the block-shaped tissue repair material exhibits a water absorptivity of 800% by mass or more, and a residual ratio of 60% by mass or less after three hours of decomposition treatment using 1 mol/L hydrochloric acid.

Abstract: It is an object of the present invention to provide a cell construct for cell transplantation that does not contain a substance having cytotoxicity, such as glutaraldehyde, and suppresses the necrosis of the transplanted cells in the construct (namely, having a high cell survival rate). The present invention provides a cell construct for cell transplantation comprising biocompatible polymer blocks that do not contain glutaraldehyde and at least one type of cells, wherein a plurality of biocompatible polymer blocks are disposed in gaps among a plurality of cells, and wherein the biocompatible polymer blocks have a tap density of 10 mg/cm3 or more and 500 mg/cm3 or less, or the value of the square root of the cross-sectional area/boundary length in the two-dimensional sectional image of the polymer block is 0.01 or more and 0.13 or less.

Abstract: A cleaning composition for removing plasma etching residue and/or ashing residue formed above a semiconductor substrate is provided that includes (component a) water, (component b) a hydroxylamine and/or a salt thereof, (component c) a basic organic compound, and (component d) an organic acid and has a pH of 7 to 9. There are also provided a cleaning process and a process for producing semiconductor device employing the cleaning composition.

Abstract: A cleaning composition for removing plasma etching residue and/or ashing residue formed above a semiconductor substrate is provided that includes (component a) water, (component b) a hydroxylamine and/or a salt thereof, (component c) a basic organic compound, and (component d) an organic acid and has a pH of 7 to 9. There are also provided a cleaning process and a process for producing semiconductor device employing the cleaning composition.

Abstract: A method of producing a tissue repair material, the method including: (a) obtaining a gelatin-containing intermediate that contains a gelatin and has a mesh structure, using a gelatin solution in which the gelatin is dissolved in an aqueous medium; (b) drying the gelatin-containing intermediate; and (c) cross-linking the gelatin before or after the drying of the gelatin-containing intermediate.

Abstract: A cleaning method is provided that includes a step of preparing a cleaning composition containing 57 to 95 wt % of (component a) water, 1 to 40 wt % of (component b) a secondary hydroxy group- and/or tertiary hydroxy group-containing hydroxy compound, (component c) an organic acid, and (component d) a quaternary ammonium compound, the composition having a pH of 5 to 10, and a step of removing plasma etching residue formed above a semiconductor substrate by means of the cleaning composition.

Abstract: A cleaning method is provided that includes a step of preparing a cleaning composition containing 57 to 95 wt % of (component a) water, 1 to 40 wt % of (component b) a secondary hydroxy group- and/or tertiary hydroxy group-containing hydroxy compound, (component c) an organic acid, and (component d) a quaternary ammonium compound, the composition having a pH of 5 to 10, and a step of removing plasma etching residue formed above a semiconductor substrate by means of the cleaning composition.

Abstract: A cleaning method is provided that includes a step of preparing a cleaning composition containing 57 to 95 wt % of (component a) water, 1 to 40 wt % of (component b) a secondary hydroxy group- and/or tertiary hydroxy group-containing hydroxy compound, (component c) an organic acid, and (component d) a quaternary ammonium compound, the composition having a pH of 5 to 10, and a step of removing plasma etching residue formed above a semiconductor substrate by means of the cleaning composition.

Abstract: A cleaning composition for removing plasma etching residue and/or ashing residue formed above a semiconductor substrate is provided that includes (component a) water, (component b) a hydroxylamine and/or a salt thereof, (component c) a basic organic compound, and (component d) an organic acid and has a pH of 7 to 9. There are also provided a cleaning process and a process for producing semiconductor device employing the cleaning composition.

Abstract: The invention provides a cleaning liquid for semiconductor devices which is capable of removing deposits on a surface of an object to be cleaned including a photoresist, an antireflective film, an etching residue and an ashing residue at a low temperature in a short period of time with reduced environmental burdens and without causing corrosion of an interlayer dielectric film, a metal, a metal nitride, and an alloy in the object to be cleaned. The cleaning liquid for semiconductor devices according to the invention contains a reducing agent and a surfactant and has a pH of 10 to 14.

Abstract: The invention provides a cleaning liquid for semiconductor devices which is capable of removing deposits on a surface of an object to be cleaned including a photoresist, an antireflective film, an etching residue and an ashing residue at a low temperature in a short period of time with reduced environmental burdens and without causing corrosion of an interlayer dielectric film, a metal, a metal nitride, and an alloy in the object to be cleaned. The cleaning liquid for semiconductor devices according to the invention contains a reducing agent and a surfactant and has a pH of 10 to 14.