Patents by Inventor Hideo Hada
Hideo Hada has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Publication number: 20060141384Abstract: A process is provided for effectively removing by-products such as oligomers contained within a crude resin for an electronic material, thus producing a resin for an electronic material. In this process, a crude resin for an electronic material containing (a1) structural units derived from a (meth)acrylate ester with a hydrophilic site is washed using (b1) an organic solvent which is capable of dissolving said crude resin for an electronic material and which separates into two layers when combined with water, and (b2) water.Type: ApplicationFiled: January 28, 2004Publication date: June 29, 2006Inventors: Hideo Hada, Takeshi Iwai, Masaru Takeshita, Ryotaro Hayashi, Masaaki Muroi, Kota Atsuchi, Hiroaki Tomida, Kazuyuki Shiotani
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Publication number: 20060141382Abstract: There are provided a resist composition that produces a resist pattern of good shape, and a method of forming a resist pattern that uses such a resist composition. The resist composition comprises a resin component (A) that undergoes a change in alkali solubility under the action of acid, an acid generator component (B) that generates acid on exposure, and an organic solvent (C), wherein the component (B) comprises a compound represented by a general formula (I) shown below [wherein, R1 to R3 each represent, independently, a methyl group or an ethyl group; and X? represents an anion].Type: ApplicationFiled: December 18, 2003Publication date: June 29, 2006Inventors: Masaru Takeshita, Miwa Miyairi, Hideo Hada, Takeshi Iwai
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Publication number: 20060135745Abstract: A process for refining a crude resin for a resist is provided, which is capable of effectively removing by-products such as polymers and oligomers contained within the crude resin. The process provides a refining process for the crude resin of a resist resin (A) used in a photoresist composition comprising at least the resist resin (A) and an acide generator (B) dissolved in a first organic solvent (C1), wherein if the concentration of the component (A) in the photoresist composition is labeled X, and the crude resin concentration of the component (A) in a crude resin solution comprising the crude resin of the component (A) dissolved in a second organic solvent (C2) is labeled Y, then (i) the crude resin solution is prepared so that Y is smaller than X, and (ii) the crude resin solution is subsequently filtered.Type: ApplicationFiled: January 29, 2004Publication date: June 22, 2006Inventors: Hideo Hada, Takeshi Iwai, Miwa Miyairi, Masaaki Muroi, Kota Atsuchi, Hiroaki Tomida
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Publication number: 20060134553Abstract: There is provided a positive type resin composition comprising (A) a resin component comprising within the principal chain a structural unit derived from a (meth)acrylate ester and incorporating an acid dissociable, dissolution inhibiting group containing a polycyclic group on an ester side chain section, for which the solubility in alkali increases under the action of acid, (B) an acid generator component which generates acid on exposure, and (C) an organic solvent, wherein the component (A) comprises both a structural unit derived from a methacrylate ester and a structural unit derived from an acrylate ester. According to such a resist composition, a resist pattern can be formed which displays little surface roughness and line edge roughness on etching, and also offers excellent resolution and a wide depth of focus range.Type: ApplicationFiled: February 2, 2006Publication date: June 22, 2006Applicant: Tokyo Ohka Kogyo Co., Ltd.Inventors: Takeshi Iwai, Naotaka Kubota, Satoshi Fujimura, Miwa Miyairi, Hideo Hada
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Publication number: 20060134552Abstract: There is provided a positive type resin composition comprising (A) a resin component comprising within the principal chain a structural unit derived from a (meth)acrylate ester and incorporating an acid dissociable, dissolution inhibiting group containing a polycyclic group on an ester side chain section, for which the solubility in alkali increases under the action of acid, (B) an acid generator component which generates acid on exposure, and (C) an organic solvent, wherein the component (A) comprises both a structural unit derived from a methacrylate ester and a structural unit derived from an acrylate ester. According to such a resist composition, a resist pattern can be formed which displays little surface roughness and line edge roughness on etching, and also offers excellent resolution and a wide depth of focus range.Type: ApplicationFiled: February 2, 2006Publication date: June 22, 2006Applicant: Tokyo Ohka Kogyo Co., Ltd.Inventors: Takeshi Iwai, Naotaka Kubota, Satoshi Fujimura, Miwa Miyairi, Hideo Hada
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Publication number: 20060127806Abstract: There is provided a positive type resin composition comprising (A) a resin component comprising within the principal chain a structural unit derived from a (meth)acrylate ester and incorporating an acid dissociable, dissolution inhibiting group containing a polycyclic group on an ester side chain section, for which the solubility in alkali increases under the action of acid, (B) an acid generator component which generates acid on exposure, and (C) an organic solvent, wherein the component (A) comprises both a structural unit derived from a methacrylate ester and a structural unit derived from an acrylate ester. According to such a resist composition, a resist pattern can be formed which displays little surface roughness and line edge roughness on etching, and also offers excellent resolution and a wide depth of focus range.Type: ApplicationFiled: February 2, 2006Publication date: June 15, 2006Applicant: Tokyo Ohka Kogyo Co., Ltd.Inventors: Takeshi Iwai, Naotaka Kubota, Satoshi Fujimura, Miwa Miyairi, Hideo Hada
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Publication number: 20060127808Abstract: There is provided a positive type resin composition comprising (A) a resin component comprising within the principal chain a structural unit derived from a (meth)acrylate ester and incorporating an acid dissociable, dissolution inhibiting group containing a polycyclic group on an ester side chain section, for which the solubility in alkali increases under the action of acid, (B) an acid generator component which generates acid on exposure, and (C) an organic solvent, wherein the component (A) comprises both a structural unit derived from a methacrylate ester and a structural unit derived from an acrylate ester. According to such a resist composition, a resist pattern can be formed which displays little surface roughness and line edge roughness on etching, and also offers excellent resolution and a wide depth of focus range.Type: ApplicationFiled: February 2, 2006Publication date: June 15, 2006Applicant: Tokyo Ohka Kogyo Co., Ltd.Inventors: Takeshi Iwai, Naotaka Kubota, Satoshi Fujimura, Midwa Miyairi, Hideo Hada
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Publication number: 20060127807Abstract: There is provided a positive type resin composition comprising (A) a resin component comprising within the principal chain a structural unit derived from a (meth)acrylate ester and incorporating an acid dissociable, dissolution inhibiting group containing a polycyclic group on an ester side chain section, for which the solubility in alkali increases under the action of acid, (B) an acid generator component which generates acid on exposure, and (C) an organic solvent, wherein the component (A) comprises both a structural unit derived from a methacrylate ester and a structural unit derived from an acrylate ester. According to such a resist composition, a resist pattern can be formed which displays little surface roughness and line edge roughness on etching, and also offers excellent resolution and a wide depth of focus range.Type: ApplicationFiled: February 2, 2006Publication date: June 15, 2006Applicant: Tokyo Ohka Kogyo Co., Ltd.Inventors: Takeshi Iwai, Naotaka Kubota, Satoshi Fujimura, Miwa Miyairi, Hideo Hada
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Publication number: 20060014098Abstract: A technique to acquire a photoresist composition which can reduce occurrence of defects of a resist pattern after development is provided. Further, a technique to obtain a photoresist composition having excellent storage stability characteristics as a resist solution (storage stability); and a technique to obtain a photoresist composition which reduces the change of sensitivity and resist pattern size after treatment almost completely are provided. A photoresist composition containing a resin component (A), an acid-generating component (B) for generating an acid under exposure, and an organic solvent (C) is passed through a first filter 2a equipped with a first membrane having zeta potential of more than ?20 mV but no more than 15 mV in distilled water of pH 7.0.Type: ApplicationFiled: December 18, 2003Publication date: January 19, 2006Applicant: TOKYO OHKA KOGYO CO., LTD.Inventors: Hideo Hada, Takeshi Iwai, Masaaki Shimazaki, Masaaki Muroi, Kota Atsuchi, Hiroaki Tomida, Hirokazu Ozaki
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Publication number: 20060009583Abstract: There is provided a photoresist composition capable of forming a resist pattern with minimal LER, and a method of forming a resist pattern. This method is a method of producing a (meth)acrylic acid derivative polymer for use as a resist by radical polymerization of a monomer mixture comprising (a1) a (meth)acrylate ester with an acid dissociable, dissolution inhibiting group, and (a2) a (meth)acrylate ester with a lactone unit, wherein (a1) and (a2) utilize compounds such that when each compound (a1) and (a2) is individually subjected to homopolymerization, under identical conditions to the radical polymerization, and a residual monomer ratio is determined 10 minutes after the start of the homopolymerization, the difference between the minimum residual monomer ratio and the maximum residual monomer ratio is no more than 15 mol %.Type: ApplicationFiled: December 1, 2003Publication date: January 12, 2006Inventors: Naotaka Kubota, Takeshi Iwai, Hideo Hada
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Patent number: 6982140Abstract: There is provided a positive type resist composition formed by dissolving (A) a resin component with a unit derived from a (meth)acrylate ester in the principal chain, for which the solubility in alkali increases under the action of acid, and (B) an acid generator component which generates acid on exposure, in an organic solvent component (C), wherein the resin component (A) is a copolymer comprising (a1) a unit derived from a (meth)acrylate ester comprising an acid dissociable, dissolution inhibiting group containing a polycyclic group, (a2) a unit derived from a (meth)acrylate ester comprising a lactone containing monocyclic group or polycyclic group, (a3) a unit derived from a (meth)acrylate ester comprising a hydroxyl group containing polycyclic group, and (a4) a unit derived from a (meth)acrylate ester comprising a polycyclic group which is different from the unit (a1), the unit (a2) and the unit (a3).Type: GrantFiled: November 29, 2002Date of Patent: January 3, 2006Assignee: Tokyo Ohka Kogyo., Ltd.Inventors: Hideo Hada, Satoshi Fujimura, Jun Iwashita
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Polymer compound, resist composition and dissolution inhibitor agent containing the polymer compound
Publication number: 20050130056Abstract: Provided are a polymer compound having high transparency for use in a photoresist composition for microfabrication of the next generation, a resist composition using the polymer compound as a base polymer, and a dissolution inhibitor agent composed of the polymer compound. To ensure etching resistance, an alicyclic group is introduced into a side chain portion. Hydrogen atoms on the ring of the alicyclic group are highly fluorinated to ensure transparency to light of 157 nanometer wavelength, represented by an adsorption coefficient equal to or less than 3.0 ?m?1. As the alicyclic group, a polycyclic group is preferably used. Hydrogen atoms are highly fluorinated by preferably substituting all hydrogen atoms on the ring by fluorine atoms, that is, forming a perfluoroalicyclic group. The resist composition is formed by using the polymer compound as a base polymer and further, the dissolution inhibitor agent is formed of the polymer compound.Type: ApplicationFiled: November 28, 2003Publication date: June 16, 2005Inventors: Toshiyuki Ogata, Kotaro Endo, Hiromitsu Tsuji, Masaaki Yoshida, Hideo Hada, Ryoichi Takasu, Mitsuru Sato -
Patent number: 6897012Abstract: Disclosed is a chemical-amplification negative-working photoresist composition used for photolithographic patterning in the manufacture of semiconductor devices suitable for patterning light-exposure to ArF excimer laser beams and capable of giving a high-resolution patterned resist layer free from swelling and having an orthogonal cross sectional profile by alkali-development. The characteristic ingredient of the composition is the resinous compound which has two types of functional groups, e.g., hydroxyalkyl groups and carboxyl or carboxylate ester groups, capable of reacting each with the other to form intramolecular and/or intermolecular ester linkages in the presence of an acid released from the radiation-sensitive acid generating agent to cause insolubilization of the resinous ingredient in an aqueous alkaline developer solution.Type: GrantFiled: May 4, 2004Date of Patent: May 24, 2005Assignee: Tokyo Ohka Kogyo Co., Ltd.Inventors: Hideo Hada, Takeshi Iwai, Satoshi Fujimura
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Publication number: 20050095535Abstract: There is provided a positive type resin composition comprising (A) a resin component comprising within the principal chain a structural unit derived from a (meth)acrylate ester and incorporating an acid dissociable, dissolution inhibiting group containing a polycyclic group on an ester side chain section, for which the solubility in alkali increases under the action of acid, (B) an acid generator component which generates acid on exposure, and (C) an organic solvent, wherein the component (A) comprises both a structural unit derived from a methacrylate ester and a structural unit derived from an acrylate ester. According to such a resist composition, a resist pattern can be formed which displays little surface roughness and line edge roughness on etching, and also offers excellent resolution and a wide depth of focus range.Type: ApplicationFiled: December 7, 2004Publication date: May 5, 2005Inventors: Takeshi Iwai, Naotaka Kubota, Satoshi Fujimura, Miwa Miyairi, Hideo Hada
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Publication number: 20050065312Abstract: Disclosed is a chemical-amplification negative-working photoresist composition used for photolithographic patterning in the manufacture of semiconductor devices suitable for patterning light-exposure to ArF excimer laser beams and capable of giving a high-resolution patterned resist layer free from swelling and having an orthogonal cross sectional profile by alkali-development. The characteristic ingredient of the composition is the resinous compound which has two types of functional groups, e.g., hydroxyalkyl groups and carboxyl or carboxylate ester groups, capable of reacting each with the other to form intramolecular and/or intermolecular ester linkages in the presence of an acid released from the radiation-sensitive acid generating agent to cause insolubilization of the resinous ingredient in an aqueous alkaline developer solution.Type: ApplicationFiled: November 8, 2004Publication date: March 24, 2005Inventors: Hideo Hada, Takeshi Iwai, Satoshi Fujimura
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Publication number: 20050014090Abstract: A resist composition which is stable relative to solvents used in immersion lithography processes and displays excellent sensitivity and resist pattern profile, and a method of forming a resist pattern that uses such a resist composition are provided. The resist composition is in accordance with predetermined parameters, or is a positive resist composition comprising a resin component (A) which contains an acid dissociable, dissolution inhibiting group and displays increased alkali solubility under the action of acid, an acid generator component (B), and an organic solvent (C), wherein the component (A) contains a structural unit (a1) derived from a (meth)acrylate ester containing an acid dissociable, dissolution inhibiting group, but contains no structural units (a0), including structural units (a0-1) containing an anhydride of a dicarboxylic acid and structural units (a0-2) containing a phenolic hydroxyl group.Type: ApplicationFiled: May 13, 2004Publication date: January 20, 2005Inventors: Taku Hirayama, Hideo Hada, Satoshi Fujimura, Takeshi Iwai, Mitsuru Sato, Ryoichi Takasu, Toshikazu Tachikawa, Jun Iwashita, Keita Ishiduka, Tomotaka Yamada, Toshikazu Takayama, Masaaki Yoshida
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Publication number: 20040202966Abstract: Disclosed is a chemical-amplification negative-working photoresist composition used for photolithographic patterning in the manufacture of semiconductor devices suitable for patterning light-exposure to ArF excimer laser beams and capable of giving a high-resolution patterned resist layer free from swelling and having an orthogonal cross sectional profile by alkali-development. The characteristic ingredient of the composition is the resinous compound which has two types of functional groups, e.g., hydroxyalkyl groups and carboxyl or carboxylate ester groups, capable of reacting each with the other to form intramolecular and/or intermolecular ester linkages in the presence of an acid released from the radiation-sensitive acid generating agent to cause insolubilization of the resinous ingredient in an aqueous alkaline developer solution.Type: ApplicationFiled: May 4, 2004Publication date: October 14, 2004Inventors: Hideo Hada, Takeshi Iwai, Satoshi Fujimura
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Patent number: 6759176Abstract: Provided is a chemical-amplification positive-working resist composition capable of giving a resist pattern having excellent dry etching resistance and adhesion to the substrate with high pattern resolution and further having a good profile with improvement in the line edge roughness.Type: GrantFiled: November 27, 2001Date of Patent: July 6, 2004Assignee: Tokyo Ohka Kogyo Co., Ltd.Inventors: Takeshi Iwai, Hideo Hada, Satoshi Fujimura
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Patent number: 6749989Abstract: The invention discloses a positive-working photoresist composition suitable for patterning light-exposure with light having a wavelength of 200 nm or shorter. The photoresist composition comprises a resinous compound capable of being imparted with increased solubility in an aqueous alkaline solution by interaction with an acid, a radiation-sensitive acid generating compound capable of generating an acid by irradiation with a radiation and an organic solvent, in which the resinous compound is a copolymer consisting of a combination of three types of specific (meth)acrylate units as the monomeric units. The patterned resist layer formed from the photoresist composition has an advantage in respect of decreased line slimming caused by electron beam irradiation in SEM inspection.Type: GrantFiled: November 30, 2001Date of Patent: June 15, 2004Assignee: Tokyo Ohka Kogyo Co., Ltd.Inventors: Hideo Hada, Satoshi Fujimura, Kazuhito Sasaki, Takeshi Iwai
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Patent number: 6749991Abstract: Disclosed is a chemical-amplification negative-working photoresist composition used for photolithographic patterning in the manufacture of semiconductor devices suitable for patterning light-exposure to ArF excimer laser beams and capable of giving a high-resolution patterned resist layer free from swelling and having an orthogonal cross sectional profile by alkali-development. The characteristic ingredient of the composition is the resinous compound which has two types of functional groups, e.g., hydroxyalkyl groups and carboxyl or carboxylate ester groups, capable of reacting each with the other to form intramolecular and/or intermolecular ester linkages in the presence of an acid released from the radiation-sensitive acid generating agent to cause insolubilization of the resinous ingredient in an aqueous alkaline developer solution.Type: GrantFiled: July 18, 2002Date of Patent: June 15, 2004Assignee: Tokyo Ohka Kogyo Co., Ltd.Inventors: Hideo Hada, Takeshi Iwai, Satoshi Fujimura