Abstract: A lead frame for a semiconductor device, made of a copper alloy, capable of preventing the creation of delamination between encapsuling resin and attributable to a lead frame without sacrificing the wire bondability and, a process for producing the lead frame and a semiconductor device using the lead frame. According to the present invention, (1) there is provided a lead frame for a plastic molded type semiconductor device, made of a copper alloy material partially plated with at least one noble metal, for wire bonding or die bonding purposes, selected from silver, gold, and palladium, wherein the whole area or a predetermined area of the surface of the copper at least on its side to be contacted with a encapsuling resin has a thin noble metal plating of at least one member selected from silver, gold, platinum, and palladium.

Abstract: An aluminum or aluminum alloy radiator possessing high reliability and excellent heat dissipation is provided. A process for producing an aluminum alloy radiator is also provided which has improved adhesion between the radiator and the mold resin and can prevent cracking in a resin molded portion.The aluminum alloy radiator, for a plastic molded type semiconductor device, comprising an anodized aluminum-iron alloy having an iron content of 0.5 to 3.0% by weight or an anodized aluminum-silicon alloy having a silicon content of 0.5 to 3.5% by weight. The process for producing an aluminum alloy radiator for a plastic molded type semiconductor device, comprising the steps of: anodizing an aluminum alloy; and subjecting the anodized aluminum alloy to sealing, wherein the aluminum alloy radiator after the sealing is heat-treated at a temperature of 180 to 250.degree. C.