Abstract: A plasma processing apparatus and a plasma processing method used in etching, ashing, CVD, etc. in the manufacturing, etc. of large-scale integrated circuits (LSIs) and liquid crystal display panels (LCDs). The plasma processing apparatus includes a dielectric plate used for the passage of a microwave, a microwave window disposed to confront the dielectric plate, and a reaction chamber in which a sample stage is disposed to confront the microwave window. The apparatus is characterized in that the microwave window has a recess in the area confronting the sample stage. The plasma processing method is characterized by implementing a plasma process for a sample with the plasma processing apparatus. The method and apparatus are capable of raising the plasma density in the area confronting the sample, improving the plasma processing rate, improving the etch-through performance for fine hole patterns, and improving the yield of semiconductor devices.

Abstract: A plasma processing apparatus and plasma processing method are provided to be used for etching, ashing, CVD, etc. in the manufacturing, etc. of large-scale integrated circuits (LSIs) and liquid crystal display panels (LCDs). The plasma processing apparatus generates plasma by using a microwave introduced through a microwave window, while controlling the ions in the plasma by varying the RF voltage applied to the sample stage. The apparatus is characterized to include a counter electrode (grounded electrode) which is located at the rim section of the microwave window against the sample stage. The plasma processing method implements a plasma process for a sample with the plasma processing apparatus. The method and apparatus are capable of alleviating the sticking of particles to the sample and metallic contamination, and also capable of improving the yield of semiconductor devices, etc.