Abstract: A Thin Film Transistor (TFT) array substrate has a dummy signal line as a short circuit wiring for preventing a short circuit due to electrostatic breakdown between a signal line as an upper layer wiring and a gate line as a lower wiring. The dummy signal line is formed on an outer peripheral area of the TFT array substrate. This dummy signal line has a three-layer structure of a silicon lower layer, an Indium Tin Oxide (ITO) intermediate layer and an aluminum (Al) upper layer, enumerated from the lower layer. Although the silicon layer is formed as one consecutive wiring during formation thereof, the silicon layer is etched simultaneously with the Al layer when the Al layer is subjected to pattern forming, and is electrically disconnected between the gate lines. Since the dummy wiring is disconnected after its formation, a short circuit does not occur between the gate lines even in the case where the dummy wiring and two or more of the gate lines are short-circuited with each other.

Abstract: A liquid crystal display structure, includes a glass substrate and at least one or more chips mounted on the glass substrate including flexible printed circuit connect pins. A common wiring for connecting the at least one or more chips to a flexible printed circuit is formed on the glass substrate. The common wiring is connected to the flexible printed circuit connect pins of the at least one or more chips and to the flexible printed circuit at at least one position on the common wiring.

Abstract: A Thin Film Transistor (TFT) array substrate has a dummy signal line as a short circuit wiring for preventing a short circuit due to electrostatic breakdown between a signal line as an upper layer wiring and a gate line as a lower wiring. The dummy signal line is formed on an outer peripheral area of the TFT array substrate. This dummy signal line has a three-layer structure of a silicon lower layer, an Indium Tin Oxide (ITO) intermediate layer and an aluminum (Al) upper layer, enumerated from the lower layer. Although the silicon layer is formed as one consecutive wiring during formation thereof, the silicon layer is etched simultaneously with the Al layer when the Al layer is subjected to pattern forming, and is electrically disconnected between the gate lines. Since the dummy wiring is disconnected after its formation, a short circuit does not occur between the gate lines even in the case where the dummy wiring and two or more of the gate lines are short-circuited with each other.

Abstract: A magneto-optical medium is comprised of three layers. The first layer is made of a rare earth-transition metal amorphous film from one to twenty nanometers thick. The second layer is comprised of a rear earth-transition metal amorphous film or crystalline film and is one to twenty nanometers thick. The third layer is comprised of a rare earth-transition metal amorphous film and is not less than two nanometers thick. The resulting medium has a sufficiently large magneto-optical effect even at short wave lengths and is perpendicular magnetized film. A data storage system including the magneto-optical medium therein.