Abstract: A nickel thin film is formed, for example, to a thickness of 2 nm or more on a polyethylene naphthalate substrate by a vacuum evaporation method. A magnetoresistance effect element using ferromagnetic nano-junction is comprised by using two laminates each comprising a nickel thin film formed on a polyethylene naphthalate substrate, and joining these two laminates so that the nickel thin films cross to each other in such a manner that edges of the nickel thin films face each other.

Abstract: At least two thin pieces, each of which is composed of a structure having conductor layers and dielectric layers laminated therein, are stacked such that those layers intersect each other and that the edges of the conductor layers face with a gap, and the stacked structure is cut along a dividing plane passing the intersecting section of the layers or the vicinity of the intersecting section and dividing the intersection angle of the layers to produce a probe. A magnetic head is produced using magnetic layers as conductor layers.

Abstract: A nickel thin film is formed, for example, to a thickness of 2 nm or more on a polyethylene naphthalate substrate by a vacuum evaporation method. A magnetoresistance effect element using ferromagnetic nano-junction is comprised by using two laminates each comprising a nickel thin film formed on a polyethylene naphthalate substrate, and joining these two laminates so that the nickel thin films cross to each other in such a manner that edges of the nickel thin films face each other.

Abstract: The invention relates to a magnetic sensor utilizing a magnetoresistance effect, a method for driving a magnetic sensor utilizing a magnetoresistance effect and a magnetic recording system, and an object of the invention is to overcome the restriction in the level of sensitivity due to the upper limit of the sensing current that can be made to flow. A magneto resistive element 4 is connected to a portion of a feedback loop of a transistor 2 and an LC circuit 3 in an oscillating circuit 1 formed of transistor 2 and LC circuit 3, which is provided with a switching means 5 so that the reading rate of magnetic data is regulated by the switching frequency of switching means 5.

Abstract: The invention relates to a magnetic sensor utilizing a magnetoresistance effect, a method for driving a magnetic sensor utilizing a magnetoresistance effect and a magnetic recording system, and an object of the invention is to overcome the restriction in the level of sensitivity due to the upper limit of the sensing current that can be made to flow. A magneto resistive element 4 is connected to a portion of a feedback loop of a transistor 2 and an LC circuit 3 in an oscillating circuit 1 formed of transistor 2 and LC circuit 3, which is provided with a switching means 5 so that the reading rate of magnetic data is regulated by the switching frequency of switching means 5.