Abstract: An extraction region other than its mask holes is divided into a plurality of portions according to predetermined rules, in such a way that the mask holes are set to variable {2} and the portions thus divided except the mask holes are set to a variable {0} or {1}, thereby specifying variables a={0}, {1}, {2}. Then, scanning is performed in both X-axis and Y-axis directions, to divide a portion of variable {1} into a plurality of portions, to each of which is set any one of variables {0, 1, 2} which is determined on a basis of likelihood of defectiveness of its own, so that subsequently the variable of portions of variable {1} is reviewed on the basis of its likelihood of defectiveness.

Abstract: In the method of designing EB (electron beam) mask, it includes the steps of (a) to (d). The step of (a) is the step of dividing an integrated circuit pattern into two complementary patterns. The step of (b) is the step of scanning around one, as an object pattern, of small patterns included in one of the two complementary patterns, while measuring a distance from the object pattern to the small patterns adjacent to the object pattern. The step of (c) is the step of registering a minimum of distances from the object pattern to the adjacent small patterns. The step of (d) is the step of changing a shape of at least one of the small patterns based on the minimum distance.

Abstract: An electron-beam exposure method of segmented mask-pattern transfer type wherein a prescribed pattern is segmented into a plurality of divisions so as to form a segmented pattern in every division and exposure is made through every division one after another, so that the projection of the whole of the prescribed pattern is accomplished. The method includes the steps of carrying out the exposure through every division and transcribing a segmented pattern thereon one after another. The method also includes the steps of carrying out the correction exposure for every projection region of the segmented patterns one after another with a defocused beam of the inverse pattern of the respective segmented patterns, and thereby the proximity effect caused by the pattern exposure is corrected.

Abstract: An electron beam exposure mask is provided with a substrate portion provided with an aperture and a thin film portion supported by the substrate portion. The thin film portion is provided with a thin semiconductor active film (the first semiconductor film) and a thick semiconductor active film (the second semiconductor film) thicker than the thin semiconductor active film. A fine pattern portion having small-gauge apertures is formed in the thin semiconductor active film and a coarse pattern portion having large-gauge apertures is formed in the thick semiconductor active film. As a result, a fine pattern portion can be formed partially.

Abstract: A mask inspecting method includes (a), (b), (c), and (d). The (a) includes providing an electron beam exposure system used for patterning a wafer with a mask. The (b) includes emitting electrons to the mask from the electron beam exposure system. The (c) includes detecting an electron passing through the mask of the emitted electrons. The (d) includes inspecting the mask for a defect based on a detected result of the (c).

Abstract: In the method of designing EB (electron beam) mask, it includes the steps of (a) to (d). The step of (a) is the step of dividing an integrated circuit pattern into two complementary patterns. The step of (b) is the step of scanning around one, as an object pattern, of small patterns included in one of the two complementary patterns, while measuring a distance from the object pattern to the small patterns adjacent to the object pattern. The step of (c) is the step of registering a minimum of distances from the object pattern to the adjacent small patterns. The step of (d) is the step of changing a shape of at least one of the small patterns based on the minimum distance.

Abstract: The present invention provides an electron beam mask having a plurality of apertures according to a predetermined design pattern for use in a batch projection exposure by an electron beam. At least one of the apertures which requires reinforcement such as those having a doughnut shape or a bridged doughnut (leaf) shape is selectively filled with a thin film made from a material transmitting the electron beam.