Abstract: A semiconductor device includes a semiconductor substrate, a first wiring arranged on the semiconductor substrate, a first electrode pad electrically connected to the first wiring, and a porous organic resin film covering the front surface of the semiconductor substrate such that the first electrode pad is exposed to the outside.

Abstract: A semiconductor device includes a semiconductor substrate, a first wiring arranged on the semiconductor substrate, a first electrode pad electrically connected to the first wiring, and a porous organic resin film covering the front surface of the semiconductor substrate such that the first electrode pad is exposed to the outside.

Abstract: Grooves are formed in an element formation surface of a wafer along dicing lines or chip dividing lines. The grooves are deeper than a thickness of a finished chip. A holding member is attached on the element formation surface of the wafer. A bottom surface of the wafer is lapped and polished to the thickness of the finished chip, thereby dividing the wafer into chips. The chips are transferred while being held by porous adsorption.

Abstract: Grooves are formed in a surface of a wafer, on which semiconductor elements are formed, along dicing lines or chip parting lines on the wafer. The grooves are deeper than the thickness of a finished chip, and each of them has a curved bottom surface. A holding sheet is attached on the surface of the wafer on which the semiconductor elements are formed. Subsequently, the rear surface of the wafer is lapped and polished to the thickness of the finished chip, thereby dividing the wafer into chips. Even after the wafer is divided into the chips, the lapping and polishing is continued until the thickness of the wafer becomes equal to the thickness of the finished chip. The lapping and polishing amount required to attain the thickness of the finished chip after the lapped face of the wafer reaches the bottom surface of the groove, and a depth of a region of the curved bottom surface of the groove define a ratio of not less than 0.3.

Abstract: Grooves are formed in a surface of a wafer, on which surface semiconductor elements are formed, along dicing lines on the wafer by means of a dicing blade. The grooves are deeper than a thickness of a finished chip. Alternatively, grooves are formed in a surface of a wafer, on which surface semiconductor elements are formed, along chip parting lines on the wafer by etching. Like the grooves described above, the grooves are deeper than a thickness of a finished chip. A holding member is attached on the surface of the wafer on which the semiconductor elements are formed. The bottom surface of the wafer is lapped and polished to the thickness of the finished chip, thereby dividing the wafer into chips. When the wafer is divided into the chips, the lapping and polishing is continued until the thickness of the wafer becomes equal to the thickness of the finished chip, even after the wafer has been divided into the chips by the lapping and polishing.

Abstract: A semiconductor device comprises a semiconductor chip with an active surface having output bonding pads to which a plurality of conductive leads or finger contacts are attached via a TAB method and is packaged onto an insulating substrate having a pattern of conductors on its surface. The active surface of the semiconductor chip is initially coated with a first resin sealant comprising moldable resin agent containing a volatile solvent in the range of about 30% to 80% by volume, the solvent being soluble in the resin agent and having a volatility at a temperature below the thermosetting temperature of the resin agent. The semiconductor device is then mounted on the insulating substrate with the chip leads in aligned relation with at least some of the pattern conductors resulting in a cavity between the active circuit surface coated with the first resin sealant and the substrate surface.