Patents by Inventor Hideo Niko

Hideo Niko has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Dry etching method, fabrication method for semiconductor device, and dry etching apparatus
    Patent number: 7402527
    Abstract: When etching is performed with respect to a silicon-containing material by using a dry etching apparatus having a dual power source, the application of bias power is initiated before oxidization proceeds at a surface of the silicon-containing material. Specifically, the application of the bias power is initiated before the application of source power is initiated. Alternatively, the source power and the bias power are applied such that the effective value of the source power reaches a second predetermined value after the effective value of the bias power reaches a first predetermined value.
    Type: Grant
    Filed: October 11, 2006
    Date of Patent: July 22, 2008
    Assignee: Matsushita Electric Industrial Co., Ltd.
    Inventors: Takeshi Yamashita, Takao Yamaguchi, Hideo Niko
  • Dry etching method, fabrication method for semiconductor device, and dry etching apparatus
    Patent number: 7341922
    Abstract: When etching is performed with respect to a silicon-containing material by using a dry etching apparatus having a dual power source, the application of bias power is initiated before oxidization proceeds at a surface of the silicon-containing material. Specifically, the application of the bias power is initiated before the application of source power is initiated. Alternatively, the source power and the bias power are applied such that the effective value of the source power reaches a second predetermined value after the effective value of the bias power reaches a first predetermined value.
    Type: Grant
    Filed: July 18, 2006
    Date of Patent: March 11, 2008
    Assignee: Matsushita Electric Industrial Co., Ltd.
    Inventors: Takeshi Yamashita, Takao Yamaguchi, Hideo Niko
  • Dry etching method, fabrication method for semiconductor device, and dry etching apparatus
    Publication number: 20070029284
    Abstract: When etching is performed with respect to a silicon-containing material by using a dry etching apparatus having a dual power source, the application of bias power is initiated before oxidization proceeds at a surface of the silicon-containing material. Specifically, the application of the bias power is initiated before the application of source power is initiated. Alternatively, the source power and the bias power are applied such that the effective value of the source power reaches a second predetermined value after the effective value of the bias power reaches a first predetermined value.
    Type: Application
    Filed: October 11, 2006
    Publication date: February 8, 2007
    Applicant: MATSUSHITA ELECTRIC INDUSTRIAL CO., LTD.
    Inventors: Takeshi Yamashita, Takao Yamaguchi, Hideo Niko
  • Dry etching method, fabrication method for semiconductor device, and dry etching apparatus
    Patent number: 7148151
    Abstract: When etching is performed with respect to a silicon-containing material by using a dry etching apparatus having a dual power source, the application of bias power is initiated before oxidization proceeds at a surface of the silicon-containing material. Specifically, the application of the bias power is initiated before the application of source power is initiated. Alternatively, the source power and the bias power are applied such that the effective value of the source power reaches a second predetermined value after the effective value of the bias power reaches a first predetermined value.
    Type: Grant
    Filed: January 20, 2004
    Date of Patent: December 12, 2006
    Assignee: Matsushita Electric Industrial Co., Ltd.
    Inventors: Takeshi Yamashita, Takao Yamaguchi, Hideo Niko
  • Dry etching method, fabrication method for semiconductor device, and dry etching apparatus
    Publication number: 20060258117
    Abstract: When etching is performed with respect to a silicon-containing material by using a dry etching apparatus having a dual power source, the application of bias power is initiated before oxidization proceeds at a surface of the silicon-containing material. Specifically, the application of the bias power is initiated before the application of source power is initiated. Alternatively, the source power and the bias power are applied such that the effective value of the source power reaches a second predetermined value after the effective value of the bias power reaches a first predetermined value.
    Type: Application
    Filed: July 18, 2006
    Publication date: November 16, 2006
    Applicant: Matsushita Electronic Industrial Co., Ltd.
    Inventors: Takeshi Yamashita, Takao Yamaguchi, Hideo Niko
  • Dry etching method, fabrication method for semiconductor device, and dry etching apparatus
    Publication number: 20040147126
    Abstract: When etching is performed with respect to a silicon-containing material by using a dry etching apparatus having a dual power source, the application of bias power is initiated before oxidization proceeds at a surface of the silicon-containing material. Specifically, the application of the bias power is initiated before the application of source power is initiated. Alternatively, the source power and the bias power are applied such that the effective value of the source power reaches a second predetermined value after the effective value of the bias power reaches a first predetermined value.
    Type: Application
    Filed: January 20, 2004
    Publication date: July 29, 2004
    Applicant: Matsushita Electric Industrial Co., Ltd.
    Inventors: Takeshi Yamashita, Takao Yamaguchi, Hideo Niko
  • Dry etching method, fabrication method for semiconductor device, and dry etching apparatus
    Patent number: 6762129
    Abstract: When etching is performed with respect to a silicon-containing material by using a dry etching apparatus having a dual power source, the application of bias power is initiated before oxidization proceeds at a surface of the silicon-containing material. Specifically, the application of the bias power is initiated before the application of source power is initiated. Alternatively, the source power and the bias power are applied such that the effective value of the source power reaches a second predetermined value after the effective value of the bias power reaches a first predetermined value.
    Type: Grant
    Filed: April 5, 2001
    Date of Patent: July 13, 2004
    Assignee: Matsushita Electric Industrial Co., Ltd.
    Inventors: Takeshi Yamashita, Takao Yamaguchi, Hideo Niko
  • Dry etching method, fabrication method for semiconductor device, and dry etching apparatus
    Publication number: 20010034138
    Abstract: When etching is performed with respect to a silicon-containing material by using a dry etching apparatus having a dual power source, the application of bias power is initiated before oxidization proceeds at a surface of the silicon-containing material. Specifically, the application of the bias power is initiated before the application of source power is initiated. Alternatively, the source power and the bias power are applied such that the effective value of the source power reaches a second predetermined value after the effective value of the bias power reaches a first predetermined value.
    Type: Application
    Filed: April 5, 2001
    Publication date: October 25, 2001
    Inventors: Takeshi Yamashita, Takao Yamaguchi, Hideo Niko