Abstract: A method for controlling an inkjet printing system including calculating a pigment concentration of ink ejected by the inkjet printhead relative to an initial pigment concentration of the ink based on a determined height of ink in an ink reservoir and a determined period of time since a last printhead activation. A firing pattern for the inkjet printhead is determined based on the determined height, the determined period of time and the calculated relative pigment concentration to account for settling of ink stored in the ink reservoir.

Abstract: A fluid printhead including a plurality of heater elements that are driven to nucleate bubbles in fluid so that the fluid is ejected from the printhead in the form of drops, a plurality of drive elements, each drive element selectively driving a corresponding one of the plurality of heater elements in accordance with a printer controller, and a drop detection system that includes a plurality of drop detection cells, each drop detection cell detecting a change in electrical resistance of a corresponding one of the plurality of heater elements that occurs upon drop formation.

Abstract: A fluid printhead including a plurality of heater elements that are driven to nucleate bubbles in fluid so that the fluid is ejected from the printhead in the form of drops, a plurality of drive elements, each drive element selectively driving a corresponding one of the plurality of heater elements in accordance with a printer controller, and a drop detection system that includes a plurality of drop detection cells, each drop detection cell detecting a change in electrical resistance of a corresponding one of the plurality of heater elements that occurs upon drop formation.

Abstract: A fluid printhead including a plurality of heater elements that are driven to nucleate bubbles in fluid so that the fluid is ejected from the printhead in the form of drops, a plurality of drive elements, each drive element selectively driving a corresponding one of the plurality of heater elements in accordance with a printer controller, and a drop detection system that includes a plurality of drop detection cells, each drop detection cell detecting a change in electrical resistance of a corresponding one of the plurality of heater elements that occurs upon drop formation.

Abstract: A fluid printhead including a plurality of heater elements that are driven to nucleate bubbles in fluid so that the fluid is ejected from the printhead in the form of drops, a plurality of drive elements, each drive element selectively driving a corresponding one of the plurality of heater elements in accordance with a printer controller, and a drop detection system that includes a plurality of drop detection cells, each drop detection cell detecting a change in electrical resistance of a corresponding one of the plurality of heater elements that occurs upon drop formation.

Abstract: A method for controlling an inkjet printing system including calculating a pigment concentration of ink ejected by the inkjet printhead relative to an initial pigment concentration of the ink based on a determined height of ink in an ink reservoir and a determined period of time since a last printhead activation. A firing pattern for the inkjet printhead is determined based on the determined height, the determined period of time and the calculated relative pigment concentration to account for settling of ink stored in the ink reservoir.

Abstract: A method for controlling an inkjet printing system including calculating a pigment concentration of ink ejected by the inkjet printhead relative to an initial pigment concentration of the ink based on a determined height of ink in an ink reservoir and a determined period of time since a last printhead activation. A firing pattern for the inkjet printhead is determined based on the determined height, the determined period of time and the calculated relative pigment concentration to account for settling of ink stored in the ink reservoir.

Abstract: A method for controlling an inkjet printing system including calculating a pigment concentration of ink ejected by the inkjet printhead relative to an initial pigment concentration of the ink based on a determined height of ink in an ink reservoir and a determined period of time since a last printhead activation. A firing pattern for the inkjet printhead is determined based on the determined height, the determined period of time and the calculated relative pigment concentration to account for settling of ink stored in the ink reservoir.

Abstract: A method for controlling an inkjet printing system including calculating a pigment concentration of ink ejected by the inkjet printhead relative to an initial pigment concentration of the ink based on a determined height of ink in an ink reservoir and a determined period of time since a last printhead activation. A firing pattern for the inkjet printhead is determined based on the determined height, the determined period of time and the calculated relative pigment concentration to account for settling of ink stored in the ink reservoir.

Abstract: A method for pairing two devices, each including a power supply device and memory, includes detecting non-contact power supply from the respective power supply devices of the two devices, receiving the non-contact power supply and performing pairing setting of the two devices and storing identification information of one of the two devices in the memory of the other device.

Abstract: An image displaying device for projecting and displaying an image through a light beam includes a microphone that detects a sound within an illuminated area of the light beam that projects the image and a level controlling portion that limits a level of the light beam that projects the image, when a sound has been detected by the microphone.

Abstract: A method for manufacturing a high quality semiconductor device having a through via structure. A substrate is manufactured with an oxide layer including a window region in a region in which a through via is formed. The substrate is bonded with another substrate to form an SOI substrate. The SOI substrate is ground to reduce its thickness. An island region is formed in a region at which a TSV (Through Silicon Via) structure is formed. A device and a TSV are coupled by a wire. The silicon substrate at a bottom side of the SOI substrate is removed to expose the island region from the bottom. A back contact for the TSV is formed in the window region, which is formed in a buried oxide layer.

Abstract: A method for manufacturing a high quality semiconductor device having a through via structure. A substrate is manufactured with an oxide layer including a window region in a region in which a through via is formed. The substrate is bonded with another substrate to form an SOI substrate. The SOI substrate is ground to reduce its thickness. An island region is formed in a region at which a TSV (Through Silicon Via) structure is formed. A device and a TSV are coupled by a wire. The silicon substrate at a bottom side of the SOI substrate is removed to expose the island region from the bottom. A back contact for the TSV is formed in the window region, which is formed in a buried oxide layer.

Abstract: An electronic device including a shielded electronic element, and a method for manufacturing a shielding structure. An oxide film is formed on the surface of a silicon substrate having a [100] face. Part of the oxide film is removed to form a first window region. Silicon substrates are joined together to form an SOI substrate, which includes a buried mask having a second window region. Substrate thinning is then performed, and oxide films are formed on the two surfaces of the SOI substrate so that the first window region has a large area and includes the region above the buried second window region. Then, anisotropic etching is performed to form a cap that includes a step. Wire bonding for shielding is performed on the step.

Abstract: A method of forming a microelectronic device (300) including the steps of forming a sensor component (100) and a capping component (200). The sensor component (100) includes a sensor structure (150, 152) and a conductive trace (160, 162) formed on a first SOI semiconductor wafer (110). The capping component (200) includes a plurality of capping layers (230, 232) formed on a second SOI semiconductor wafer (210). During fabrication the capping component (200) is bonded to the sensor component (100) prior to fabrication of a through hole (260) in the capping component (200). Subsequent to bonding the two components together, wafer thinning removes a handle layer (112) of the first SOI semiconductor wafer (110) and a handle layer (212) of the second SOI semiconductor wafer (210).

Abstract: A method of forming a microelectronic device (300) including the steps of forming a sensor component (100) and a capping component (200). The sensor component (100) includes a sensor structure (150, 152) and a conductive trace (160, 162) formed on a first SOI semiconductor wafer (110). The capping component (200) includes a plurality of capping layers (230, 232) formed on a second SOI semiconductor wafer (210). During fabrication the capping component (200) is bonded to the sensor component (100) prior to fabrication of a through hole (260) in the capping component (200). Subsequent to bonding the two components together, wafer thinning removes a handle layer (112) of the first SOI semiconductor wafer (110) and a handle layer (212) of the second SOI semiconductor wafer (210).

Abstract: A first etch stop layer (14) is formed over a semiconductor substrate (10). A first dielectric layer (20) is formed over the first etch stop layer (14). An opening (22) is formed in the first dielectric layer (20). The opening (22) extends through the first dielectric layer (20) and exposes a first conductive material (18) under the first dielectric layer (20). A second conductive material (30) is deposited over the semiconductor substrate (10) and within the opening (22). The second conductive material (30) electrically contacts the first conductive material (18). Portions of the second conductive material (30) lying outside of the opening (22) are removed and then portions of the first dielectric layer (20) are removed to expose portions of the first etch stop layer (14).