Abstract: A semiconductor integrated circuit according to an exemplary embodiment of the present invention includes an I/O buffer provided in a semiconductor chip, single-layer pads, and multilayer pads. The single-layer pads are formed above the I/O buffer. The multilayer pads are formed above the I/O buffer separately from the single-layer pads. The single-layer pads are pads dedicated to bonding, and the multilayer pads are pads on which both probing and bonding are performed.

Abstract: A semiconductor integrated circuit according to an exemplary embodiment of the present invention includes an I/O buffer provided in a semiconductor chip, single-layer pads, and multilayer pads. The single-layer pads are formed above the I/O buffer. The multilayer pads are formed above the I/O buffer separately from the single-layer pads. The single-layer pads are pads dedicated to bonding, and the multilayer pads are pads on which both probing and bonding are performed.

Abstract: A semiconductor integrated circuit device of improved wireability, fewer number of wiring layers and strengthened power supply includes a plurality of power pads placed on a semiconductor chip and a plurality of signal pads placed on the semiconductor chip and configured to have a width less than that of the power pads. The signal pads and the power pads are placed in the uppermost wiring layer among a plurality of wiring layers. Signal wiring connecting I/O cells and signal pads is disposed in the uppermost wiring layer. First power wiring electrically connecting the I/O cells and first power pads is disposed in the uppermost wiring layer. Second power wiring connecting internal circuits and second power pads is disposed in the uppermost wiring layer.

Abstract: A semiconductor integrated circuit device of improved wireability, fewer number of wiring layers and strengthened power supply includes a plurality of power pads placed on a semiconductor chip and a plurality of signal pads placed on the semiconductor chip and configured to have a width less than that of the power pads. The signal pads and the power pads are placed in the uppermost wiring layer among a plurality of wiring layers. Signal wiring connecting I/O cells and signal pads is disposed in the uppermost wiring layer. First power wiring electrically connecting the I/O cells and first power pads is disposed in the uppermost wiring layer. Second power wiring connecting internal circuits and second power pads is disposed in the uppermost wiring layer.

Abstract: A semiconductor integrated circuit device includes macros and area I/Os. The macros are arranged in optional locations of a first empty area of a gate area in a center portion of a chip, respectively. Each of the area I/Os contains a plurality of area I/O buffers, and is arranged in an optional location of a second empty area of a total area of the gate area and a buffer area in a circumferential portion of the chip. A first macro of the macros is connected with a specific one of the area I/Os. Here, the specific area I/O may be related to the first macro and be arranged in relation to a location for the first macro to be arranged.

Abstract: A semiconductor integrated circuit device includes macros and area I/Os. The macros are arranged in optional locations of a first empty area of a gate area in a center portion of a chip, respectively. Each of the area I/Os contains a plurality of area I/O buffers, and is arranged in an optional location of a second empty area of a total area of the gate area and a buffer area in a circumferential portion of the chip. A first macro of the macros is connected with a specific one of the area I/Os. Here, the specific area I/O may be related to the first macro and be arranged in relation to a location for the first macro to be arranged.