Abstract: The present invention provides a novel hypertension therapeutic agent. The hypertension therapeutic agent of the present invention contains, as an active ingredient, a compound represented by formula (1): [F1] or a pharmaceutically acceptable salt thereof.

Abstract: The present invention provides a novel hypertension therapeutic agent. The hypertension therapeutic agent of the present invention contains, as an active ingredient, a compound represented by formula (1): or a pharmaceutically acceptable salt thereof.

Abstract: The radiation detector according to this invention has a common electrode for bias voltage application formed on a surface of an amorphous selenium semiconductor film (a-Se semiconductor film) sensitive to radiation. The common electrode is a gold thin film having a thickness in a range of 100 to 1,000 ?. The gold thin film acting as the common electrode may be formed on the surface of the a-Se semiconductor film at a relatively low vapor deposition temperature and in a reduced vapor deposition time. This feature suppresses a generation of defects in the a-Se semiconductor film due to formation of the common electrode. The gold thin film for the common electrode is not so thick as in the prior art, but is 1,000 ? or less. With the reduced thickness, the common electrode has improved boding property with respect to the a-Se semiconductor film.

Abstract: The radiation detector according to this invention has a common electrode for bias voltage application formed on a surface of an amorphous selenium semiconductor film (a-Se semiconductor film) sensitive to radiation. The common electrode is a gold thin film having a thickness in a range of 100 to 1,000 ?. The gold thin film acting as the common electrode may be formed on the surface of the a-Se semiconductor film at a relatively low vapor deposition temperature and in a reduced vapor deposition time. This feature suppresses a generation of defects in the a-Se semiconductor film due to formation of the common electrode. The gold thin film for the common electrode is not so thick as in the prior art, but is 1,000 ? or less. With the reduced thickness, the common electrode has improved boding property with respect to the a-Se semiconductor film.