Abstract: Disclosed is a semiconductor device having a radio frequency switch. Also disclosed are an antenna switch module and a method of manufacturing the semiconductor device. The semiconductor device includes a metal wiring insulating film bonded to a silicon substrate. In the semiconductor device, a crystal defect layer extends into the silicon substrate from a surface of the silicon substrate. Crystal defects are throughout the crystal defect layer. The semiconductor device and an integrated circuit are in the antenna switch module. The integrated circuit in the antenna switch module is mounted with the radio-frequency switch device and the silicon substrate. The method of manufacturing the semiconductor device includes a step of forming crystal defects throughout a silicon substrate. Radiation or a diffusion is used to form the crystal defects. After the step of forming the crystal defects, the method includes a step of implanting ions into a surface of the silicon substrate to form a crystal defect layer.

Abstract: Disclosed is a semiconductor device having a radio frequency switch. Also disclosed are an antenna switch module and a method of manufacturing the semiconductor device. The semiconductor device includes a metal wiring insulating film bonded to a silicon substrate. In the semiconductor device, a crystal defect layer extends into the silicon substrate from a surface of the silicon substrate. Crystal defects are throughout the crystal defect layer. The semiconductor device and an integrated circuit are in the antenna switch module. The integrated circuit in the antenna switch module is mounted with the radio-frequency switch device and the silicon substrate. The method of manufacturing the semiconductor device includes a step of forming crystal defects throughout a silicon substrate. Radiation or a diffusion is used to form the crystal defects. After the step of forming the crystal defects, the method includes a step of implanting ions into a surface of the silicon substrate to form a crystal defect layer.

Abstract: Disclosed is a semiconductor device having a radio frequency switch. Also disclosed are an antenna switch module and a method of manufacturing the semiconductor device. The semiconductor device includes a metal wiring insulating film bonded to a silicon substrate. In the semiconductor device, a crystal defect layer extends into the silicon substrate from a surface of the silicon substrate. Crystal defects are throughout the crystal defect layer. The semiconductor device and an integrated circuit are in the antenna switch module. The integrated circuit in the antenna switch module is mounted with the radio-frequency switch device and the silicon substrate. The method of manufacturing the semiconductor device includes a step of forming crystal defects throughout a silicon substrate. Radiation or a diffusion is used to form the crystal defects. After the step of forming the crystal defects, the method includes a step of implanting ions into a surface of the silicon substrate to form a crystal defect layer.

Abstract: Disclosed is a semiconductor device having a radio frequency switch. Also disclosed are an antenna switch module and a method of manufacturing the semiconductor device. The semiconductor device includes a metal wiring insulating film bonded to a silicon substrate. In the semiconductor device, a crystal defect layer extends into the silicon substrate from a surface of the silicon substrate. Crystal defects are throughout the crystal defect layer. The semiconductor device and an integrated circuit are in the antenna switch module. The integrated circuit in the antenna switch module is mounted with the radio-frequency switch device and the silicon substrate. The method of manufacturing the semiconductor device includes a step of forming crystal defects throughout a silicon substrate. Radiation or a diffusion is used to form the crystal defects. After the step of forming the crystal defects, the method includes a step of implanting ions into a surface of the silicon substrate to form a crystal defect layer.

Abstract: Disclosed is a semiconductor device having a radio frequency switch. Also disclosed are an antenna switch module and a method of manufacturing the semiconductor device. The semiconductor device includes a metal wiring insulating film bonded to a silicon substrate. In the semiconductor device, a crystal defect layer extends into the silicon substrate from a surface of the silicon substrate. Crystal defects are throughout the crystal defect layer. The semiconductor device and an integrated circuit are in the antenna switch module. The integrated circuit in the antenna switch module is mounted with the radio-frequency switch device and the silicon substrate. The method of manufacturing the semiconductor device includes a step of forming crystal defects throughout a silicon substrate. Radiation or a diffusion is used to form the crystal defects. After the step of forming the crystal defects, the method includes a step of implanting ions into a surface of the silicon substrate to form a crystal defect layer.

Abstract: A high-frequency semiconductor device, wherein on one surface of a semiconductor substrate, a first insulating layer, an undoped epitaxial polysilicon layer in a state of column crystal, a second insulating layer, and a semiconductor layer are formed in order from a side of the one surface, and a high-frequency transistor is formed in a location of the semiconductor layer facing the undoped epitaxial polysilicon layer with the second insulating layer in between.

Abstract: A high-frequency semiconductor device, wherein on one surface of a semiconductor substrate, a first insulating layer, an undoped epitaxial polysilicon layer in a state of column crystal, a second insulating layer, and a semiconductor layer are formed in order from a side of the one surface, and a high-frequency transistor is formed in a location of the semiconductor layer facing the undoped epitaxial polysilicon layer with the second insulating layer in between.

Abstract: Disclosed is a semiconductor device having a radio frequency switch. Also disclosed are an antenna switch module and a method of manufacturing the semiconductor device. The semiconductor device includes a metal wiring insulating film bonded to a silicon substrate. In the semiconductor device, a crystal defect layer extends into the silicon substrate from a surface of the silicon substrate. Crystal defects are throughout the crystal defect layer. The semiconductor device and an integrated circuit are in the antenna switch module. The integrated circuit in the antenna switch module is mounted with the radio-frequency switch device and the silicon substrate. The method of manufacturing the semiconductor device includes a step of forming crystal defects throughout a silicon substrate. Radiation or a diffusion is used to form the crystal defects. After the step of forming the crystal defects, the method includes a step of implanting ions into a surface of the silicon substrate to form a crystal defect layer.

Abstract: Disclosed is a semiconductor device having a radio frequency switch. Also disclosed are an antenna switch module and a method of manufacturing the semiconductor device. The semiconductor device includes a metal wiring insulating film bonded to a silicon substrate. In the semiconductor device, a crystal defect layer extends into the silicon substrate from a surface of the silicon substrate. Crystal defects are throughout the crystal defect layer. The semiconductor device and an integrated circuit are in the antenna switch module. The integrated circuit in the antenna switch module is mounted with the radio-frequency switch device and the silicon substrate. The method of manufacturing the semiconductor device includes a step of forming crystal defects throughout a silicon substrate. Radiation or a diffusion is used to form the crystal defects. After the step of forming the crystal defects, the method includes a step of implanting ions into a surface of the silicon substrate to form a crystal defect layer.

Abstract: Disclosed is a semiconductor device having a radio frequency switch. Also disclosed are an antenna switch module and a method of manufacturing the semiconductor device. The semiconductor device includes a metal wiring insulating film bonded to a silicon substrate. In the semiconductor device, a crystal defect layer extends into the silicon substrate from a surface of the silicon substrate. Crystal defects are throughout the crystal defect layer. The semiconductor device and an integrated circuit are in the antenna switch module. The integrated circuit in the antenna switch module is mounted with the radio-frequency switch device and the silicon substrate. The method of manufacturing the semiconductor device includes a step of forming crystal defects throughout a silicon substrate. Radiation or a diffusion is used to form the crystal defects. After the step of forming the crystal defects, the method includes a step of implanting ions into a surface of the silicon substrate to form a crystal defect layer.

Abstract: A light sensing element includes a photodiode formed on a semiconductor substrate surface, and a laminated structure formed on the photodiode, wherein the laminated structure includes a first layer formed of a silicon oxide film, a second layer formed on the first layer and formed of a silicon nitride film, and a third layer formed on the second layer and formed of a polysilicon film.

Abstract: In a vapor-phase growth method in which a silicon-germanium mixed crystal layer is deposited on a semiconductor substrate, the vapor-phase growth method comprises a first step of introducing silicon raw material gas into a reaction furnace in such a manner that a silicon raw material gas partial pressure increases in proportion to a time to thereby deposit a first semiconductor layer of a silicon layer on the semiconductor substrate under reduced pressure, a second step of introducing silicon raw material gas and germanium raw material gas into the reaction furnace in such a manner that a desired germanium concentration may be obtained to thereby deposit a second semiconductor layer of a silicon-germanium mixed crystal layer on the first semiconductor layer under reduced pressure and a third step of introducing silicon raw material gas into the reaction furnace under reduced pressure to thereby deposit a third semiconductor layer of a silicon layer on the second semiconductor layer.

Abstract: Polyclonal antibody specific for a phosphorylated linker region in Smad2 and/or Smad3.

Abstract: In a vapor-phase growth method in which a silicon-germanium mixed crystal layer is deposited on a semiconductor substrate, the vapor-phase growth method comprises a first step of introducing silicon raw material gas into a reaction furnace in such a manner that a silicon raw material gas partial pressure increases in proportion to a time to thereby deposit a first semiconductor layer of a silicon layer on the semiconductor substrate under reduced pressure, a second step of introducing silicon raw material gas and germanium raw material gas into the reaction furnace in such a manner that a desired germanium concentration may be obtained to thereby deposit a second semiconductor layer of a silicon-germanium mixed crystal layer on the first semiconductor layer under reduced pressure and a third step of introducing silicon raw material gas into the reaction furnace under reduced pressure to thereby deposit a third semiconductor layer of a silicon layer on the second semiconductor layer.

Abstract: In a vapor-phase growth method in which a silicon-germanium mixed crystal layer is deposited on a semiconductor substrate, the vapor-phase growth method comprises a first step of introducing silicon raw material gas into a reaction furnace in such a manner that a silicon raw material gas partial pressure increases in proportion to a time to thereby deposit a first semiconductor layer of a silicon layer on the semiconductor substrate under reduced pressure, a second step of introducing silicon raw material gas and germanium raw material gas into the reaction furnace in such a manner that a desired germanium concentration may be obtained to thereby deposit a second semiconductor layer of a silicon-germanium mixed crystal layer on the first semiconductor layer under reduced pressure and a third step of introducing silicon raw material gas into the reaction furnace under reduced pressure to thereby deposit a third semiconductor layer of a silicon layer on the second semiconductor layer.

Abstract: In a vapor-phase growth method in which a silicon-germanium mixed crystal layer is deposited on a semiconductor substrate, the vapor-phase growth method comprises a first step of introducing silicon raw material gas into a reaction furnace in such a manner that a silicon raw material gas partial pressure increases in proportion to a time to thereby deposit a first semiconductor layer of a silicon layer on the semiconductor substrate under reduced pressure, a second step of introducing silicon raw material gas and germanium raw material gas into the reaction furnace in such a manner that a desired germanium concentration may be obtained to thereby deposit a second semiconductor layer of a silicon-germanium mixed crystal layer on the first semiconductor layer under reduced pressure and a third step of introducing silicon raw material gas into the reaction furnace under reduced pressure to thereby deposit a third semiconductor layer of a silicon layer on the second semiconductor layer.

Abstract: The present invention relates to a semiconductor layer applicable to a hetero-junction bipolar transistor, a forming method thereof, and a semiconductor device and a manufacturing method thereof, for example. The semiconductor layer and the forming method thereof according to the present invention includes a first SiGe film or SiGeC film containing Ge of which the concentration become equal to a thermal expansion coefficient of silicon oxide and a second SiGe film or SiGeC film formed on the first film. In a semiconductor device according to the present invention and a manufacturing method thereof, first and second layers are laminated on an oxide film having an opening, and the first layer has the substantially same thermal expansion coefficient as that of the oxide film and has a thermal expansion coefficient different from that of the second layer.

Abstract: The present invention relates to a semiconductor layer applicable to a hetero-junction bipolar transistor, a forming method thereof, and a semiconductor device and a manufacturing method thereof, for example. The semiconductor layer and the forming method thereof according to the present invention includes a first SiGe film or SiGeC film containing Ge of which the concentration become equal to a thermal expansion coefficient of silicon oxide and a second SiGe film or SiGeC film formed on the first film. In a semiconductor device according to the present invention and a manufacturing method thereof, first and second layers are laminated on an oxide film having an opening, and the first layer has the substantially same thermal expansion coefficient as that of the oxide film and has a thermal expansion coefficient different from that of the second layer.

Abstract: Polyclonal antibody specific for a phosphorylated linker region in Smad2 and/or Smad3.

Abstract: The present invention relates to a semiconductor layer applicable to a hetero-junction bipolar transistor, a forming method thereof, and a semiconductor device and a manufacturing method thereof, for example. The semiconductor layer and the forming method thereof according to the present invention includes a first SiGe film or SiGeC film containing Ge of which the concentration become equal to a thermal expansion coefficient of silicon oxide and a second SiGe film or SiGeC film formed on the first film. In a semiconductor device according to the present invention and a manufacturing method thereof, first and second layers are laminated on an oxide film having an opening, and the first layer has the substantially same thermal expansion coefficient as that of the oxide film and has a thermal expansion coefficient different from that of the second layer.