Abstract: An object of the present invention is to provide a semiconductor apparatus and a method of manufacturing the same, in which dispersion of a threshold voltage Vth of a transistor at every transistor is reduced to remove generation of fixed charges in a gate insulation film and a surface level to stabilize the operation of the semiconductor apparatus. A semiconductor apparatus having a MIS transistor (1), wherein a gate electrode (4) of said MIS transistor (1), which mainly contributes to the operation of a circuit, is continuously formed to a position above a bypass film (8) made of an insulation film through which a leak current is able to easily flow as compared with a gate insulation film (7) of said MIS transistor (1) under the same voltage.

Abstract: A method for making a solid-state imaging device that can form a first P-type well region deep in a substrate without being affected by the heat applied during an epitaxial growth process is disclosed. The method includes a first step of preparing a substrate composite comprising an first substrate and a second substrate on the first substrate, a second step of implanting impurity ions from the surface of the second substrate at an energy exceeding 3 MeV so as to form a barrier layer, and a third step of forming a photosensor in the second substrate.

Abstract: A solid-state pickup element achieves both improvement in sensitivity and reduction of pixel size and a method thereof, includes a first conductive type semiconductor area, which is formed at least so as to include the inside of the semiconductor substrate upward of the overflow barrier area inside the semiconductor substrate, and a charge accumulating area at the position corresponding to the first conductive type semiconductor area of the light receptive sensor part in the epitaxial layer on the semiconductor substrate. An overflow barrier area is formed in the semiconductor substrate, and the first conductive type semiconductor area is formed on the surface, respectively, wherein an epitaxial layer is formed on the semiconductor substrate, and a charge accumulating area is formed at the position corresponding to the first conductive type semiconductor area on the surface side of the epitaxial layer, thereby producing a solid-state pickup element.

Abstract: A solid state image sensor is provided with a primary first-conductivity-type semiconductive region which serves as a charge storage region of a photo-sensing area and a secondary first-conductivity-type semiconductive region for enlarging a charge collecting region of the photo-sensing area.

Abstract: A process for producing a solid image pickup device is demanded that can enhance a photoelectric conversion region by forming an overflow barrier layer at a deep position and can prevents generation of radiation due to the use of resist as a mask. Upon producing a solid image pickup device having a vertical overflow drain structure, ion implantation is conducted on an entire of a silicon substrate without using a resist mask, so as to form an overflow barrier layer. It is also possible that a trench is formed in a peripheral part of the silicon substrate to surround a pixel region and to separate the overflow barrier layer into the pixel region and an outer peripheral part, and an impurity diffusion layer having a conductive type different from that of the overflow barrier layer is formed on an inner surface of the trench.

Abstract: The invention relates to a solid-state pickup element that can achieve both improvement in the sensitivity and reduction of pixel size and a method for producing the same, wherein a solid-state pickup element 1 is constructed, which includes a first conductive type semiconductor area 21, which is formed at least so as to include the inside of the semiconductor substrate 2 upward of the overflow barrier area 3 inside the semiconductor substrate 2, and a charge accumulating area 6 at the position corresponding to the first conductive type semiconductor area 21 of the light receptive sensor part 5 in the epitaxial layer 4 on the semiconductor substrate 2.

Abstract: A solid-state imaging sensor, a method for manufacturing the solid-state imaging sensor and an imaging device of which said solid state image sensor is designed to reduce unwanted light reflections, improve light focusing of light reflections from the substrate and oblique light constituents onto the sensor in order to allow further reduction in pixel size. Transfer electrodes in a line shape are arrayed at spaced intervals on a substrate, discrete sensors for photo-electric conversion are formed between the transfer electrode lines, a light-impervious film consisting of a first and second light-impervious films with an aperture positioned directly above a sensor is formed on the substrate and covers the transfer electrode to block any incident light other than the beam of light R from entering the sensor, and an on-chip lens for focusing the light R onto a sensor is formed above the light-impervious film.

Abstract: An object of the present invention is to provide a semiconductor apparatus and a method of manufacturing the same, in which dispersion of a threshold voltage Vth of a transistor at every transistor is reduced to remove generation of fixed charges in a gate insulation film and a surface level to stabilize the operation of the semiconductor apparatus. A semiconductor apparatus having a MIS transistor (1), wherein a gate electrode (4) of said MIS transistor (1), which mainly contributes to the operation of a circuit, is continuously formed to a position above a bypass film (8) made of an insulation film through which a leak current is able to easily flow as compared with a gate insulation film (7) of said MIS transistor (1) under the same voltage.

Abstract: An object of the present invention is to provide a semiconductor apparatus and a method of manufacturing the same, in which dispersion of a threshold voltage Vth of a transistor at every transistor is reduced to remove generation of fixed charges in a gate insulation film and a surface level to stabilize the operation of the semiconductor apparatus. A semiconductor apparatus having a MIS transistor (1), wherein a gate electrode (4) of said MIS transistor (1), which mainly contributes to the operation of a circuit, is continuously formed to a position above a bypass film (8) made of an insulation film through which a leak current is able to easily flow as compared with a gate insulation film (7) of said MIS transistor (1) under the same voltage.

Abstract: A solid state image sensor is provided with a primary first-conductivity-type semiconductive region which serves as a charge storage region of a photo-sensing area and a secondary first-conductivity-type semiconductive region for enlarging a charge collecting region of the photo-sensing area.

Abstract: A solid-state imaging element is able to maximize a sensitivity relative to various kinds of light sources having different incident angles. In a solid-state imaging element (20), a maximum inclination angle (max of a curved surface (SL) of an interlayer lens (11) relative to a surface (SS) parallel to a surface of a substrate (2) is set to an angle near a critical angle (&thgr;c) of a total reflection.

Abstract: A solid-state imaging sensor, a method for manufacturing the solid-state imaging sensor and an imaging device of which said solid state image sensor is designed to reduce unwanted light reflections, improve light focusing of light reflections from the substrate and oblique light constituents onto the sensor in order to allow further reduction in pixel size. Transfer electrodes in a line shape are arrayed at spaced intervals on a substrate, discrete sensors for photo-electric conversion are formed between the transfer electrode lines, a light-impervious film consisting of a first and second light-impervious films with an aperture positioned directly above a sensor is formed on the substrate and covers the transfer electrode to block any incident light other than the beam of light R from entering the sensor, and an on-chip lens for focusing the light R onto a sensor is formed above the light-impervious film.

Abstract: In an amplifying type solid-state imaging device having a pixel MOS transistor, the occurrence of blooming can be suppressed and an amount of signal charges can be increased. A second conductivity-type overflow-barrier region (23) and a first conductivity-type semiconductor region (24) are sequentially formed on a first conductivity-type semiconductor substrate (22). A pixel MOS transistor (29) comprising a source region (27), a drain region (28) and a gate portion (26) is formed on the first conductivity-type semiconductor region (24), and a second conductivity-type channel stopper region (41) for signal charges accumulated in the first conductivity-type semiconductor region (24) of the gate portion (26) is formed within the first conductivity-type semiconductor region (24) formed just below the drain region (28).

Abstract: In an amplifying type solid-state imaging device having a pixel MOS transistor, the occurrence of blooming can be suppressed and an amount of signal charges can be increased. A second conductivity-type overflow-barrier region (23) and a first conductivity-type semiconductor region (24) are sequentially formed on a first conductivity-type semiconductor substrate (22). A pixel MOS transistor (29) comprising a source region (27), a drain region (28) and a gate portion (26) is formed on the first conductivity-type semiconductor region (24), and a second conductivity-type channel stopper region (41) for signal charges accumulated in the first conductivity-type semiconductor region (24) of the gate portion (26) is formed within the first conductivity-type semiconductor region (24) formed just below the drain region (28).

Abstract: In a CCD solid state image sensing device in which a photosensitive section is constructed by a photodiode formed by a PN junction between a first P-type well region and an N-type impurity diffusion region formed on an N-type silicon substrate, the N-type impurity diffusion region is formed by the ion implantation of single substance of arsenic (As). According to this CCD solid state image sensing device, a bright flaw on an image sensing screen, which is one of the defects encountered with an image sensing screen, can be reduced. Also, the n-type impurity diffusion region constructing the PN Junction can be reduced in size and the CCD solid state image sensing device itself can be made compact in size. Further, a method of manufacturing a CCD solid state image sensing device also is provided.

Abstract: Disclosed is a CMOS integrated circuit, in which a high voltage circuit with both positive and negative polarities and a large scale low voltage circuit are formed on the same chip. The high voltage circuit is composed of a CMOS circuit having an nMOS transistor formed on a p-type semiconducting substrate, and a pMOS transistor formed in an n-well formed on the p-type semiconducting substrate. The low voltage circuit is composed of a CMOS circuit having a pMOS transistor which is formed in an n-well formed on the p-type semiconducting substrate, and an nMOS transistor formed in a p-well formed in the n-well.

Abstract: In a CCD solid state image sensing device in which a photosensitive section is constructed by a photodiode formed by a PN junction between a first P-type well region and an N-type impurity diffusion region formed on an N-type silicon substrate, the N-type impurity diffusion region is formed by the ion implantation of single substance of arsenic (As). According to this CCD solid state image sensing device, a bright flaw on an image sensing screen, which is one of the defects encountered with an image sensing screen, can be reduced. Also, the n-type impurity diffusion region constructing the PN junction can be reduced in size and the CCD solid state image sensing device itself can be made compact in size. Further, a method of manufacturing a CCD solid state image sensing device also is provided.

Abstract: The present invention is directed to a solid state imaging deice in which a light sensing region (3), a vertical register (4) and a channel stopper region (5) are formed within a well region (2) on an N-type silicon substrate (1). A positive electric charge storage region (6) is formed on the surface of the light sensing region (3) and a well region (7) is formed beneath the vertical register (4), respectively. Further, a transfer electrode (9) is selectively formed on the vertical register (4) through a gate insulating layer (8) and an Al light-intercepting layer (11) is formed on the transfer electrode (9) through an interlevel insulator (10). A surface protecting layer (12) is formed on the whole surface including the Al light-intercepting layer (11). In this solid state imaging device, a tapered portion (11a) is formed on the Al light-intercepting layer 11 corresponding to a peripheral edge portion of the light sensing region 3.

Abstract: A CCD image sensor includes a package (2) in which there are packaged a CCD solid state imaging device (1) in which a getter layer is formed on the rear surface of a silicon substrate and a photo-sensing portion and a CCD register are formed on the surface of the silicon substrate and a substrate electrode (3 ) of a plate configuration disposed on the lower surface of the CCD solid state imaging device (1 ). A heating device (5 ) is disposed on the lower surface of the substrate electrode (3 ) through an insulating material (4 ) of a plate configuration. The heating device (5) is formed of a resistance pattern (7) that is formed on the surface of an insulating body (6) of a plate configuration by a well-known thick film forming technique. A lattice defect that is caused by a metal ion or the like entered into the CCD solid state imaging device in accordance with an aging change can be repaired without disassembling the solid state image sensor.

Abstract: In a CCD solid state image sensing device in which a photo-sensitive section is constructed by a photodiode formed by a PN junction between a first P-type well region and an N-type impurity diffusion region formed on an N-type silicon substrate, the N-type impurity diffusion region is formed by the ion implantation of single substance of arsenic (As). According to this CCD solid state image sensing device, a bright flaw on an image sensing screen, which is one of the defects encountered with an image sensing screen, can be reduced. Also, the n-type impurity diffusion region constructing the PN junction can be reduced in size and the CCD solid state image sensing device itself can be made compact in size. Further, a method of manufacturing a CCD solid state image sensing device also is provided.