Patents by Inventor Hideshi Motoyama

Hideshi Motoyama has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Publication number: 20240039577
    Abstract: Performance is improved in a wireless communication terminal in which an antenna is connected to a transmission circuit and a reception circuit. A transmission/reception switching circuit includes a first N-type transistor and a second N-type transistor. The first N-type transistor has a drain connected to the antenna and a gate to which a constant voltage is applied. Furthermore, the second N-type transistor has a drain connected to a source of the first N-type transistor and a gate to which a transmission signal is input. Furthermore, the second N-type transistor supplies a reception signal from one of a source and the drain.
    Type: Application
    Filed: October 28, 2021
    Publication date: February 1, 2024
    Inventors: HIDESHI MOTOYAMA, SHOTA HAYAKAWA
  • Patent number: 11012091
    Abstract: LDPC coding is executed using a check matrix of an LDPC code whose code length is 736 bits and whose code rate is 1/4, and modulation is executed using a repetition unit that has an LDPC code obtained by the LDPC coding, repeatedly arranged therein. The LDPC code includes information bits and parity bits, the check matrix includes an information matrix portion corresponding to the information bits and a parity matrix portion corresponding to the parity bits, the parity matrix portion has a stepwise structure, the information matrix portion is indicated by a check matrix initial value table, and the check matrix initial value table is a predetermined table indicating positions of elements of “1” of the information matrix portion for each eight columns. This technique is applicable to, for example, information transmission using the LDPC code.
    Type: Grant
    Filed: February 27, 2018
    Date of Patent: May 18, 2021
    Assignees: SONY CORPORATION, SONY SEMICONDUCTOR SOLUTIONS CORPORATION
    Inventors: Seiji Kobayashi, Masanori Sato, Nabil Loghin, Toshihiro Fujiki, Ryoji Ikegaya, Hiroyuki Kamata, Yusuke Yoneyama, Kimiya Kato, Akira Endo, Sawako Kiriyama, Hiroyuki Mita, Hideshi Motoyama, Hiroshi Aoki, Daisuke Kawakami
  • Publication number: 20190393898
    Abstract: LDPC coding is executed using a check matrix of an LDPC code whose code length is 736 bits and whose code rate is 1/4, and modulation is executed using a repetition unit that has an LDPC code obtained by the LDPC coding, repeatedly arranged therein. The LDPC code includes information bits and parity bits, the check matrix includes an information matrix portion corresponding to the information bits and a parity matrix portion corresponding to the parity bits, the parity matrix portion has a stepwise structure, the information matrix portion is indicated by a check matrix initial value table, and the check matrix initial value table is a predetermined table indicating positions of elements of “1” of the information matrix portion for each eight columns. This technique is applicable to, for example, information transmission using the LDPC code.
    Type: Application
    Filed: February 27, 2018
    Publication date: December 26, 2019
    Applicants: Sony Semiconductor Solutions Corporation, Sony Corporation
    Inventors: Seiji KOBAYASHI, Masanori SATO, Nabil LOGHIN, Toshihiro FUJIKI, Ryoji IKEGAYA, Hiroyuki KAMATA, Yusuke YONEYAMA, Kimiya KATO, Akira ENDO, Sawako KIRIYAMA, Hiroyuki MITA, Hideshi MOTOYAMA, Hiroshi AOKI, Daisuke KAWAKAMI
  • Patent number: 6873830
    Abstract: A bias circuit according to the present invention includes a monitoring circuit having a second FET and a resistance connected to a drain of the second FET for monitoring a drain current of a first FET to be supplied with a gate bias; a differential circuit including a third FET having a gate supplied with a reference voltage, a fourth FET having a gate connected to the drain of the second FET, sources of the third FET and the fourth FET being connected to a common point, and resistances connected to drains of the third FET and the fourth FET, respectively; and a fifth FET having a drain connected to the common source of the third FET and the fourth FET; wherein a drain voltage of the third FET is fed back to gates of the first FET and the second FET, and a drain voltage of the fourth FET is fed back to a gate of the fifth FET.
    Type: Grant
    Filed: May 10, 2001
    Date of Patent: March 29, 2005
    Assignee: Sony Corporation
    Inventors: Masayuki Katakura, Hideshi Motoyama
  • Publication number: 20020009980
    Abstract: A bias circuit according to the present invention includes a monitoring circuit having a second FET and a resistance connected to a drain of the second FET for monitoring a drain current of a first FET to be supplied with a gate bias; a differential circuit including a third FET having a gate supplied with a reference voltage, a fourth FET having a gate connected to the drain of the second FET, sources of the third FET and the fourth FET being connected to a common point, and resistances connected to drains of the third FET and the fourth FET, respectively; and a fifth FET having a drain connected to the common source of the third FET and the fourth FET; wherein a drain voltage of the third FET is fed back to gates of the first FET and the second FET, and a drain voltage of the fourth FET is fed back to a gate of the fifth FET.
    Type: Application
    Filed: May 10, 2001
    Publication date: January 24, 2002
    Inventors: Masayuki Katakura, Hideshi Motoyama