Abstract: A vapor phase growth apparatus according to an embodiment includes, n reactors performing a deposition process for a plurality of substrates at the same time, a first main gas supply path distributing a predetermined amount of first process gas including a group-III element to the n reactors at the same time, a second main gas supply path distributing a predetermined amount of second process gas including a group-V element to the n reactors at the same time, a controller controlling a flow rate of the first and second process gas, on the basis of control values of the flow rates of the first and second process gas supplied to the n reactors, and independently controlling predetermined process parameter independently set for each of the n reactors on the basis of control values, rotary drivers, and a heater.

Abstract: A shower head according to an embodiment includes: a mixing chamber mixing a plurality of process gases; a shower plate provided below the mixing chamber, the shower plate including a plurality of longitudinal flow paths and a lateral cooling flow path provided between the longitudinal flow paths, a mixed gas of the process gases flowing through the longitudinal flow paths, a cooling medium flowing through the lateral cooling flow path; and an outer circumferential portion cooling flow path provided around the shower plate.

Abstract: A shower head according to an embodiment includes: a mixing chamber mixing a plurality of process gases; a shower plate provided below the mixing chamber, the shower plate including a plurality of longitudinal flow paths and a lateral cooling flow path provided between the longitudinal flow paths, a mixed gas of the process gases flowing through the longitudinal flow paths, a cooling medium flowing through the lateral cooling flow path; and an outer circumferential portion cooling flow path provided around the shower plate.

Abstract: A vapor phase growth apparatus according to an embodiment includes a reaction chamber, a holder provided in the reaction chamber, the holder holding a substrate, a heater heating the substrate, a first reflector facing the holder, the heater being interposed between the first reflector and the holder, a second reflector provided between the first reflector and the heater, the second reflector having a compressive strength or a bending strength equal to or less than 1000 MPa or a Vickers hardness equal to or less than 8 GPa, the second reflector having a pattern, and a rotating shaft fixed to the holder, the rotating shaft rotating the holder.

Abstract: A shower head according to an embodiment includes: a mixing chamber mixing a plurality of process gases; a shower plate provided below the mixing chamber, the shower plate including a plurality of longitudinal flow paths and a lateral cooling flow path provided between the longitudinal flow paths, a mixed gas of the process gases flowing through the longitudinal flow paths, a cooling medium flowing through the lateral cooling flow path; and an outer circumferential portion cooling flow path provided around the shower plate.

Abstract: A shower head according to an embodiment includes: a mixing chamber mixing a plurality of process gases; a shower plate provided below the mixing chamber, the shower plate including a plurality of longitudinal flow paths and a lateral cooling flow path provided between the longitudinal flow paths, a mixed gas of the process gases flowing through the longitudinal flow paths, a cooling medium flowing through the lateral cooling flow path; and an outer circumferential portion cooling flow path provided around the shower plate.

Abstract: A vapor phase growth apparatus according to an embodiment includes, n reactors performing a deposition process for a plurality of substrates at the same time, a first main gas supply path distributing a predetermined amount of first process gas including a group-III element to the n reactors at the same time, a second main gas supply path distributing a predetermined amount of second process gas including a group-V element to the n reactors at the same time, a controller controlling a flow rate of the first and second process gas, on the basis of control values of the flow rates of the first and second process gas supplied to the n reactors, and independently controlling predetermined process parameter independently set for each of the n reactors on the basis of control values, rotary drivers, and a heater.

Abstract: A shower head according to an embodiment includes: a mixing chamber mixing a plurality of process gases; a shower plate provided below the mixing chamber, the shower plate including a plurality of longitudinal flow paths and a lateral cooling flow path provided between the longitudinal flow paths, a mixed gas of the process gases flowing through the longitudinal flow paths, a cooling medium flowing through the lateral cooling flow path; and an outer circumferential portion cooling flow path provided around the shower plate.

Abstract: A vapor phase growth apparatus according to an embodiment includes, n reactors performing a deposition process for a plurality of substrates at the same time, a first main gas supply path distributing a predetermined amount of first process gas including a group-III element to the n reactors at the same time, a second main gas supply path distributing a predetermined amount of second process gas including a group-V element to the n reactors at the same time, a controller controlling a flow rate of the first and second process gas, on the basis of control values of the flow rates of the first and second process gas supplied to the n reactors, and independently controlling predetermined process parameter independently set for each of the n reactors on the basis of control values, rotary drivers, and a heater.

Abstract: A vapor phase growth method according to an embodiment is a vapor phase growth method of forming on a single substrate a film having a composition different from a composition of the substrate. The method includes, rotating the single substrate with a center of the single substrate being a rotation center, heating a single substrate to a first temperature, and forming a silicon carbide film having a film thickness of 10 nm or more and 200 nm or less on a surface of the single substrate by supplying a first process gas containing silicon and carbon as a laminar flow in a direction substantially perpendicular to the surface of the single substrate.

Abstract: A film growth apparatus according to one aspect of the present disclosure includes: a reactor configured to perform film growth processing on a substrate; an exhaust configured to discharge an exhaust gas from the reactor to the outside; a first valve including a valving element, the first valve provided in a pipe connecting the reactor with the exhaust and configured to control a pressure of the reactor by a position of the valving element; a valving element driver configured to cause the valving element to operate; and a valve controller including a closed position storage configured to store a closed position of the valving element, an opening degree controller configured to control the position of the valving element operated by the valving element driver, and a closed position shifter configured to detect a load of the valving element driver and shift the closed position in a case where the load exceeds a predetermined reference value.

Abstract: A vapor phase growth apparatus according to an embodiment includes n reaction chambers, a main gas supply passage supplying a process gas to the n reaction chambers, a main mass flow controller arranged in the main gas supply passage to control a flow rate of the process gas flowing in the main gas supply passage, (n?1) first sub gas supply passages being branches of the main gas supply passage to supply divided process gases to the (n?1) reaction chambers among the n reaction chambers, (n?1) first sub mass flow controllers arranged in the first sub gas supply passages to control flow rates of the process gases flowing in the first sub gas supply passages, and one second sub gas supply passage being a branch of the main gas supply passage to supply a remainder of the process gas to the one reaction chamber other than the (n?1) reaction chambers.

Abstract: A vapor phase growth apparatus according to one embodiment includes a reaction chamber, a storage container storing organic metal, a thermostatic bath storing a liquid with a temperature higher than a room temperature and holding the storage container immersed in the liquid, a carrier gas supply path connected to the storage container and supplying a carrier gas to the storage container, an organic-metal-containing gas transportation path connected to the storage container and the reaction chamber, the organic-metal-containing gas transportation path transporting an organic-metal-containing gas to the reaction chamber, the organic-metal-containing gas including the organic metal generated by bubbling or sublimation with the carrier gas, and a diluent gas transportation path connected to the organic-metal-containing gas transportation path at a position below a liquid level of the liquid in the thermostatic bath and transporting a diluent gas for diluting the organic-metal-containing gas.

Abstract: A film forming apparatus according to the present embodiment includes a film forming chamber accommodating a substrate and performing a film forming process per substrate, a gas supplier supplying a gas onto the substrate, a heater heating the substrate, a window provided to the film forming chamber, a radiation thermometer measuring a temperature of the substrate through the window, a parameter acquirer acquiring a parameter correlated with the temperature of the substrate, a corrector correcting the temperature of the substrate based on a change from an initial value of the parameter, and a controller controlling the heater based on the temperature of the substrate or the temperature of the substrate thus corrected.

Abstract: A vapor deposition method supplies a material gas onto a substrate while heating the substrate by a heater to sequentially form a plurality of films with vapor deposition, grows the film under a constant output control, which keeps an output of the heater at a predetermined output in each of the plurality of films, until a total film thickness of the films formed on the substrate reaches a threshold value, and grows the film under a temperature feedback control, which controls the output of the heater such that a temperature of the substrate measured by a radiation thermometer becomes a predetermined temperature, after the total film thickness reaches the threshold value.

Abstract: According to an aspect of the invention, there is provided a method for controlling a vapor phase growth apparatus, the vapor phase growth apparatus including a first reactor and a second reactor, a first substrate being processed in the first reactor, a second substrate being processed in the second reactor, the method including suppling a gas including a first source gas including organic metal, a second source gas including a group V element and a dilution gas to the first reactor and the second reactor at a predetermined flow rate, the first source gas, the second source gas and the dilution gas being supplied from gathered gas sources, respectively, rotating the first substrate and the second substrate at a predetermined rotational speed to form films, the method including: in the first reactor, supplying the first source gas, the second source gas and the dilution gas to form the films; in the second reactor, supplying the dilution gas without supplying the first source gas; and stopping forming the fil

Abstract: A vapor phase growth apparatus according to an embodiment includes: a reactor; a supporter provided in the reactor, a substrate being capable of being placed on the supporter; a heater heating the substrate; a warpage measurement device measuring warpage of the substrate; a controller determining whether the measured warpage or a rate of change in the warpage is greater than a threshold value of the warpage or the rate of change in the warpage and stopping the heater on the basis of a determination result, the threshold value being stored in advance; a supplier supplying a process gas to the reactor; and an exhaust exhausting an exhaust gas from the reactor.

Abstract: A vapor phase growth method according to an embodiment is a vapor phase growth method of forming on a single substrate a film having a composition different from a composition of the substrate. The method includes, rotating the single substrate with a center of the single substrate being a rotation center, heating a single substrate to a first temperature, and forming a silicon carbide film having a film thickness of 10 nm or more and 200 nm or less on a surface of the single substrate by supplying a first process gas containing silicon and carbon as a laminar flow in a direction substantially perpendicular to the surface of the single substrate.

Abstract: A film growth apparatus according to one aspect of the present disclosure includes: a reactor configured to perform film growth processing on a substrate; an exhaust configured to discharge an exhaust gas from the reactor to the outside; a first valve including a valving element, the first valve provided in a pipe connecting the reactor with the exhaust and configured to control a pressure of the reactor by a position of the valving element; a valving element driver configured to cause the valving element to operate; and a valve controller including a closed position storage configured to store a closed position of the valving element, an opening degree controller configured to control the position of the valving element operated by the valving element driver, and a closed position shifter configured to detect a load of the valving element driver and shift the closed position in a case where the load exceeds a predetermined reference value.

Abstract: A vapor phase growth apparatus according to an embodiment includes a reaction chamber, a holder provided in the reaction chamber, the holder holding a substrate, a heater heating the substrate, a first reflector facing the holder, the heater being interposed between the first reflector and the holder, a second reflector provided between the first reflector and the heater, the second reflector having a compressive strength or a bending strength equal to or less than 1000 MPa or a Vickers hardness equal to or less than 8 GPa, the second reflector having a pattern, and a rotating shaft fixed to the holder, the rotating shaft rotating the holder.