Abstract: The present invention provides a gas barrier laminate film containing a substrate film having on at least one surface thereof plural layers of an inorganic thin film layer, from a first layer to an n-th layer (wherein n represents an integer of 1 or more) of the inorganic thin film layer on a side of the substrate film being formed by a non-plasma film forming method, and an (n+1)-th layer formed thereon in contact therewith being formed by a facing target sputtering method, and a method for producing a gas barrier laminate film containing a substrate film having on at least one surface thereof one or plural layers of an inorganic thin film layer, the method containing: forming from a first layer to an n-th layer of the inorganic thin film layer on a side of the substrate film by a non-plasma film forming method; and forming an (n+1)-th layer thereon in contact therewith by a facing target sputtering method, and thus provides a gas barrier laminate film with high gas barrier property and excellent productivit

Abstract: To provide a gas barrier laminate film containing a substrate film having on at least one surface thereof one layer or plural layers of an inorganic thin film layer, a first layer of the inorganic thin film layer on a side of the substrate film being formed by a facing target sputtering method, and a method for producing a gas barrier laminate film, containing forming one layer or plural layers of an inorganic thin film layer on at least one surface of a substrate film, a first layer of the inorganic thin film layer on a side of the substrate film being formed by a facing target sputtering method, and thus to provide a gas barrier laminate film with high gas barrier property having a dense inorganic thin film layer that inflicts less damage to a substrate film, particularly to a resin film, on which the inorganic thin film layer is formed, and a method for producing the same.

Abstract: There is disclosed a hexagonal Group III-V nitride layer exhibiting high quality crystallinity capable of improving the properties of a semiconductor device such as a light emitting element. This nitride layer is a Group III-V nitride layer belonging to hexagonal crystal formed by growth on a substrate having a different lattice constant, which has a growth-plane orientation of {1-100} and in which a full width at half maximum b1 of angle dependence of X-ray diffraction intensity in a {1-210} plane perpendicular to the growth-plane upon X-ray incident angle from a direction parallel to the growth-plane satisfies the condition of 0.01°?b1?0.5°, or the full width at half maximum b2 of angle dependence of X-ray diffraction intensity in a {0001} plane upon X-ray incident angle from a direction parallel to the growth-plane satisfies the condition of 0.01°?b2?0.5°.