Abstract: Method of manufacturing a semiconductor device including arranging a substrate having a stacked film containing a first insulating film and a second insulating film formed thereon in an etching equipment, etching the first and second insulating film in the etching equipment, the first insulating film comprised of a nitrogen-containing film, and the second insulating film comprised of one or more kinds of films selected from a group consisting of an SiOCH film, an SiO2 film, a methyl silsesquioxane film, a hydrogen silsesquioxane film and a methyl hydrogen silsesquioxane film, while using as etching gas (a) gas including fluorocarbon represented by CxFy (x: an integer from 1 to 6, and y: an integer from 4 to 12), or (b) mixed gas of the fluorocarbon and one or more kinds of gas selected from a group consisting of O2, Ar and CO.

Abstract: A semiconductor device manufacturing method according to the invention includes a process for forming an insulating film made of organic material the dielectric constant of which is low and which has a relative dielectric constant lower than that of silicon oxide on a semiconductor substrate, a process for forming a resist film having an opening on the insulating film, a process for dry-etching the insulating film using the resist film as a mask and a process for removing at least a part of the resist film by ashing using the plasma of mixed gas including nitrogen and hydrogen.