Abstract: A fuel cell system is described that reduces ion elution and extends the life of an ion-exchange resin in a deionization unit of the fuel cell system. Based on a detected value from a conductivity meter and a measured value from a temperature sensor, a controller operates a three-way valve to control the flow rate of coolant passing through the deionization unit in order to regulate a reduction amount of conductivity of the coolant by the deionization unit. The controller controls the flow rate to maintain a relatively high level of conductivity at or within limit values allowed by the fuel cell stack, thereby extending the life of the ion exchange resin of the deionization unit.

Abstract: A mass-production transfer support system has a mass-production transfer source managing computer for managing information generated in a trial-production process of a semiconductor device and a mass-production transfer destination managing computer for managing a mass-production process of the semiconductor device.

Abstract: A solid state imaging device and a method for manufacturing the same that prevents the reproduction characteristic of an optical image from being affected by diagonal light on a semiconductor substrate surface. A CCD image sensor includes a semiconductor substrate, light receiving pixels formed on the semiconductor substrate, and a color filter arranged above the light receiving pixels and including filters transmitting light having different wavelengths. Dummy wires, which shield light that passes through the color filter and which are electrically isolated from clock wires, are arranged at locations corresponding to boundaries of regions, each defining one of the light receiving pixels.

Abstract: A mass-production transfer support system has a mass-production transfer source managing computer for managing information generated in a trial-production process of a semiconductor device and a mass-production transfer destination managing computer for managing a mass-production process of the semiconductor device.

Abstract: A semiconductor integrated circuit device including dummy conductive pieces for flattening a wiring layer, while reducing parasitic capacitance produced between wires by the dummy conductive pieces. The device includes a semiconductor substrate. The wires are formed on the semiconductor substrate with a predetermined distance therebetween. The dummy conductive pieces are formed between the wires. Each dummy conductive piece is shaped to reduce capacitance between the dummy conductive piece and an adjacent one of the wires.

Abstract: A method of fabricating a semiconductor device capable of attaining an excellent embedding characteristic also when an opening has a small diameter is obtained. According to this method of fabricating a semiconductor device, an interlayer dielectric film having an opening is formed. A first conductive member is formed in the opening by sputtering. In advance of formation of the first conductive member, first heat treatment is performed at a temperature capable of reducing the quantity of moisture and hydroxyl groups in the interlayer dielectric film. Thus, the interlayer dielectric film has a small quantity of moisture and hydroxyl groups when the first conductive member is embedded in the opening, whereby the embedding characteristic of the first conductive member is improved. Consequently, electric characteristics of a contact part can be improved also when the opening has a small diameter.

Abstract: A method of fabricating a semiconductor device capable of attaining an excellent embedding characteristic also when an opening has a small diameter is obtained. According to this method of fabricating a semiconductor device, an interlayer dielectric film having an opening is formed. A first conductive member is formed in the opening by sputtering. In advance of formation of the first conductive member, first heat treatment is performed at a temperature capable of reducing the quantity of moisture and hydroxyl groups in the interlayer dielectric film. Thus, the interlayer dielectric film has a small quantity of moisture and hydroxyl groups when the first conductive member is embedded in the opening, whereby the embedding characteristic of the first conductive member is improved. Consequently, electric characteristics of a contact part can be improved also when the opening has a small diameter.