Patents by Inventor Hideto Adachi

Hideto Adachi has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Publication number: 20190066454
    Abstract: The shopping assistance system includes a basket body, a management system and a packing machine. The shopping basket includes a basket body, a goods information receiver and a transmitter. The basket body allows goods to be put in. The goods information receiver is configured to read respective goods information from each of the goods to acquire pieces of goods information on the goods. The transmitter is configured to transmit the pieces of goods information acquired through the goods information receiver. The management system includes a receiver configured to receive the pieces of goods information from the transmitter. The packing machine is configured to transfer the goods put in the basket body together from the basket body to a container.
    Type: Application
    Filed: February 17, 2017
    Publication date: February 28, 2019
    Applicant: Panasonic Intellectual Property Management Co., Ltd.
    Inventors: Tsuyoshi KATAYAMA, Hideto ADACHI, Masamichi NAKAGAWA, Satoshi NONAKA, Ryoji INUTSUKA, Kenji FUKASE, Yoshihiko MATSUKAWA, Atsushi MARUYAMA, Junichi TAGAWA, Hironori KUMAGAI, Shozo FUKUSHIMA, Kei KOBAYASHI, Akihito SAKANAKA
  • Publication number: 20090159924
    Abstract: The semiconductor laser of this invention includes an active layer formed in a c-axis direction, wherein the active layer is made of a hexagonal-system compound semiconductor, and anisotropic strain is generated in a c plane of the active layer.
    Type: Application
    Filed: February 24, 2009
    Publication date: June 25, 2009
    Applicant: Panasonic Corporation
    Inventors: Satoshi Kamiyama, Masakatsu Suzuki, Takeshi Uenoyama, Kiyoshi Ohnaka, Akira Takamori, Masaya Mannoh, Isao Kidoguchi, Hideto Adachi, Akihiko Ishibashi, Toshiya Fukuhisa, Yasuhito Kumabuchi
  • Patent number: 7368766
    Abstract: The semiconductor laser of this invention includes an active layer formed in a c-axis direction, wherein the active layer is made of a hexagonal-system compound semiconductor, and anisotropic strain is generated in a c plane of the active layer.
    Type: Grant
    Filed: July 15, 2004
    Date of Patent: May 6, 2008
    Assignee: Matsushita Electric Industrial Co., Ltd.
    Inventors: Satoshi Kamiyama, Masakatsu Suzuki, Takeshi Uenoyama, Kiyoshi Ohnaka, Akira Takamori, Masaya Mannoh, Isao Kidoguchi, Hideto Adachi, Akihiko Ishibashi, Toshiya Fukuhisa, Yasuhito Kumabuchi
  • Patent number: 7369593
    Abstract: The semiconductor laser of the present invention includes a first conductivity-type cladding layer, a second conductivity-type cladding layer having at least one ridge structure extending in the direction of a resonator, an active layer disposed between the two cladding layers and a current blocking layer provided so as to cover at least a side face of the ridge structure. The current blocking layer includes a hydrogenated first dielectric film. In the structure having the current blocking layer formed of a dielectric, a light confining efficiency is enhanced, a threshold value of laser oscillation decreases, and current properties during the oscillation at a high temperature and with a high power are improved.
    Type: Grant
    Filed: August 17, 2004
    Date of Patent: May 6, 2008
    Assignee: Matsushita Electric Industrial Co., Ltd.
    Inventors: Kouji Makita, Hideto Adachi
  • Publication number: 20070228395
    Abstract: The semiconductor laser of this invention includes an active layer formed in a c-axis direction, wherein the active layer is made of a hexagonal-system compound semiconductor, and anisotropic strain is generated in a c plane of the active layer.
    Type: Application
    Filed: June 7, 2007
    Publication date: October 4, 2007
    Applicant: Matsushita Electric Industrial Co., Ltd.
    Inventors: Satoshi Kamiyama, Masakatsu Suzuki, Takeshi Uenoyama, Kiyoshi Ohnaka, Akira Takamori, Masaya Mannoh, Isao Kidoguchi, Hideto Adachi, Akihiko Ishibashi, Toshiya Fukuhisa, Yasuhito Kumabuchi
  • Patent number: 7223617
    Abstract: A method of mounting a semiconductor laser component capable of preventing deterioration of laser characteristics and destruction of the semiconductor laser component due to a rise in temperature and a residual stress of the semiconductor laser component. The semiconductor laser component is mounted on a submount by heating and pressure-bonding, and is heated again up to a temperature more than a melting point of a bonding member at the released pressure to release the residual stress.
    Type: Grant
    Filed: July 30, 2003
    Date of Patent: May 29, 2007
    Assignee: Matsushita Electric Industrial Co., Ltd.
    Inventors: Korekazu Mochida, legal representative, Kyoko Mochida, legal representative, Hiroto Inoue, Suguru Nakao, Yukihiro Iwata, Akira Takamori, Hideto Adachi, Masatoshi Tamura, Atuhito Mochida, deceased
  • Patent number: 7139298
    Abstract: The present invention aims to provide a semiconductor laser device which has a structure that is easy to manufacture, a satisfactory temperature characteristic as well as high-speed response characteristic. The device includes the following: an n-type GaAs substrate 101; an n-type AlGaInP cladding layer 102 formed on the n-type GaAs substrate 101; a non-doped quantum well active layer 103; a p-type AlGaInP first cladding layer 104; a p-type GaInP etching stop layer 105; a p-type AlGaInP second cladding layer 106; a p-type GaInP cap layer 107; a p-type GaAs contact layer 108; and an n-type AlInP block layer 109. The device has a ridge portion and convex portions formed on both sides of the ridge portion, and the p-type GaAs contact layer 108 is formed on the ridge portion only.
    Type: Grant
    Filed: November 23, 2004
    Date of Patent: November 21, 2006
    Assignee: Matsushita Electric Industrial Co., Ltd.
    Inventors: Kouji Makita, Kenji Yoshikawa, Takayuki Kashima, Hideto Adachi
  • Publication number: 20060171434
    Abstract: The present invention provides a method of mounting a semiconductor laser component capable of preventing deterioration of laser characteristics and destruction of the semiconductor laser component due to a rise in temperature and a residual stress of the semiconductor laser component, wherein the semiconductor laser component is mounted on a submount by heating and pressure-bonding, and is heated again up to a temperature more than a melting point of a bonding member at the released pressure to release the residual stress.
    Type: Application
    Filed: July 30, 2003
    Publication date: August 3, 2006
    Inventors: Atuhito Mochida, Hiroto Inoue, Suguru Nakao, Yukihiro Iwata, Akira Takamori, Hideto Adachi, Masatoshi Tamura, Korekazu Mochida, Kyoko Mochida
  • Patent number: 7037743
    Abstract: A semiconductor laser device is provided that includes a first conductivity type semiconductor substrate, a first conductivity type cladding layer provided on the semiconductor substrate and an active layer provided on the cladding layer. The active layer has a super-lattice structure including a disordered region in a vicinity of a cavity end face. A first cladding layer of a second conductivity type is provided on the active layer, an etching stop layer of the second conductivity type is provided on the first cladding layer and a second cladding layer of the second conductivity type is provided on the etching stop layer. The second cladding layer forms a ridge structure that extends along a cavity length direction. An impurity concentration in the etching stop layer in the vicinity of the cavity end face is equal to or smaller than about 2×1018 cm?3.
    Type: Grant
    Filed: November 3, 2003
    Date of Patent: May 2, 2006
    Assignee: Matsushita Electric Industrial Co., Ltd.
    Inventors: Toshikazu Onishi, Hideto Adachi, Masaya Mannou, Akira Takamori
  • Publication number: 20050127144
    Abstract: The present invention to provide a method of mounting a semiconductor laser component capable of preventing deterioration of laser characteristics and destruction of the semiconductor laser component due to residual stresses as well as preventing decrease of a lifetime due to increase in temperature of the semiconductor laser component. The method of mounting a semiconductor laser device which comprises a step of pressure bonding a semiconductor laser component on a submount by a collet while a bonding member is heated to be fused or melt on a submount by heating a table on which the submount is placed, for example, characterized in that the table and the collet are heated to a temperature higher than a fusing point of said bonding member so as not to occur the heat transfer substantially to a collet, and then heating of the table and the collet is terminated with maintaining the pressure bonding state.
    Type: Application
    Filed: December 10, 2003
    Publication date: June 16, 2005
    Inventors: Atuhito Mochida, Korekazu Mochida, Kyoko Mochida, Hiroto Inoue, Suguru Nakao, Yukihiro Iwata, Akira Takamori, Hideto Adachi, Masatoshi Tamura
  • Publication number: 20050117619
    Abstract: The present invention aims to provide a semiconductor laser device which has a structure that is easy to manufacture, a satisfactory temperature characteristic as well as high-speed response characteristic, and is comprised of the following: an n-type GaAs substrate 101; an n-type AlGaInP cladding layer 102 formed on the n-type GaAs substrate 101; a non-doped quantum well active layer 103; a p-type AlGaInP first cladding layer 104; a p-type GaInP etching stop layer 105; a p-type AlGaInP second cladding layer 106; a p-type GaInP cap layer 107; a p-type GaAs contact layer 108; an n-type AlInP block layer 109, has a ridge portion and convex portions formed on the both sides of the ridge portion, and the p-type GaAs contact layer 108 is formed on the ridge portion only.
    Type: Application
    Filed: November 23, 2004
    Publication date: June 2, 2005
    Inventors: Kouji Makita, Kenji Yoshikawa, Takayuki Kashima, Hideto Adachi
  • Patent number: 6888870
    Abstract: A semiconductor laser has a first conduction-type cladding layer, an active layer, and a second conduction-type cladding layer formed on a first conduction-type semiconductor substrate. The second conduction-type cladding layer has a mesa-type stripe-shaped recessed portion in at least four spots, so as to form a central ridge portion, which constitutes a ridge-type current confinement portion, and two or more lateral ridge portions, which are positioned on both sides of the central ridge portion, have a height larger than to that of the central ridge portion, and include the second conduction-type cladding layer. An insulation film with a lower refractive index than the second conduction-type cladding layer is formed in a pair of stripes disposed respectively in the regions from the side surface of the second conduction-type cladding layer on both side surfaces of the central ridge portion toward the outside. The insulation film is not formed on the central ridge portion.
    Type: Grant
    Filed: July 31, 2002
    Date of Patent: May 3, 2005
    Assignee: Matsushita Electric Industrial Co., Ltd.
    Inventors: Koji Makita, Hideto Adachi, Toshiya Kawata, Hiroshi Asaka, Osamu Imafuji, Toshiya Fukuhisa, Akira Takamori
  • Patent number: 6861672
    Abstract: The semiconductor laser of this invention includes an active layer formed in a c-axis direction, wherein the active layer is made of a hexagonal-system compound semiconductor, and anisotropic strain is generated in a c plane of the active layer.
    Type: Grant
    Filed: November 6, 2001
    Date of Patent: March 1, 2005
    Assignee: Matsushita Electric Industrial Co., Ltd.
    Inventors: Satoshi Kamiyama, Masakatsu Suzuki, Takeshi Uenoyama, Kiyoshi Ohnaka, Akira Takamori, Masaya Mannoh, Isao Kidoguchi, Hideto Adachi, Akihiko Ishibashi, Toshiya Fukuhisa, Yasuhito Kumabuchi
  • Publication number: 20050041710
    Abstract: The semiconductor laser of the present invention includes a first conductivity-type cladding layer, a second conductivity-type cladding layer having at least one ridge structure extending in the direction of a resonator, an active layer disposed between the two cladding layers and a current blocking layer provided so as to cover at least a side face of the ridge structure. The current blocking layer includes a hydrogenated first dielectric film. In the structure having the current blocking layer formed of a dielectric, a light confining efficiency is enhanced, a threshold value of laser oscillation decreases, and current properties during the oscillation at a high temperature and with a high power are improved.
    Type: Application
    Filed: August 17, 2004
    Publication date: February 24, 2005
    Applicant: Matsushita Electric Industrial Co., Ltd.
    Inventors: Kouji Makita, Hideto Adachi
  • Publication number: 20050003571
    Abstract: The semiconductor laser of this invention includes an active layer formed in a c-axis direction, wherein the active layer is made of a hexagonal-system compound semiconductor, and anisotropic strain is generated in a c plane of the active layer.
    Type: Application
    Filed: July 15, 2004
    Publication date: January 6, 2005
    Inventors: Satoshi Kamiyama, Masakatsu Suzuki, Takeshi Uenoyama, Kiyoshi Ohnaka, Akira Takamori, Masaya Mannoh, Isao Kidoguchi, Hideto Adachi, Akihiko Ishibashi, Toshiya Fukuhisa, Yasuhito Kumabuchi
  • Publication number: 20040095979
    Abstract: A semiconductor laser device including; a semiconductor substrate of a first conductivity type: a cladding layer of the first conductivity type provided on the semiconductor substrate; an active layer provided on the cladding layer of the first conductivity type, the active layer having a super-lattice structure including a disordered region in a vicinity of at least one cavity end face; a first cladding layer of a second conductivity type provided on the active layer; an etching stop layer of the second conductivity type provided on the first cladding layer; and a second cladding layer of the second conductivity type provided on the etching stop layer, the second cladding layer forming a ridge structure, the ridge structure extending along a cavity length direction and having a predetermined width.
    Type: Application
    Filed: November 3, 2003
    Publication date: May 20, 2004
    Inventors: Toshikazu Onishi, Hideto Adachi, Masaya Mannou, Akira Takamori
  • Patent number: 6671301
    Abstract: A semiconductor laser device including: a semiconductor substrate of a first conductivity type; a cladding layer of the first conductivity type provided on the semiconductor substrate; an active layer provided on the cladding layer of the first conductivity type, the active layer having a super-lattice structure including a disordered region in a vicinity of at least one cavity end face; a first cladding layer of a second conductivity type provided on the active layer; an etching stop layer of the second conductivity type provided on the first cladding layer; and a second cladding layer of the second conductivity type provided on the etching stop layer, the second cladding layer forming a ridge structure, the ridge structure extending along a cavity length direction and having a predetermined width.
    Type: Grant
    Filed: May 5, 2000
    Date of Patent: December 30, 2003
    Assignee: Matsushita Electronics Corporation
    Inventors: Toshikazu Onishi, Hideto Adachi, Masaya Mannou, Akira Takamori
  • Publication number: 20030026307
    Abstract: A semiconductor laser has a first conduction-type cladding layer, an active layer, and a second conduction-type cladding layer formed on a first conduction-type semiconductor substrate. The second conduction-type cladding layer has a mesa-type stripe-shaped recessed portion in at least four spots, so as to form a central ridge portion, which constitutes a ridge-type current confinement portion, and two or more lateral ridge portions, which are positioned on both sides of the central ridge portion, have a height larger than to that of the central ridge portion, and include the second conduction-type cladding layer. An insulation film with a lower refractive index than the second conduction-type cladding layer is formed in a pair of stripes disposed respectively in the regions from the side surface of the second conduction-type cladding layer on both side surfaces of the central ridge portion toward the outside. The insulation film is not formed on the central ridge portion.
    Type: Application
    Filed: July 31, 2002
    Publication date: February 6, 2003
    Applicant: Matsushita Electric Industrial Co., Ltd.
    Inventors: Koji Makita, Hideto Adachi, Toshiya Kawata, Hiroshi Asaka, Osamu Imafuji, Toshiya Fukuhisa, Akira Takamori
  • Patent number: 6488021
    Abstract: A method for producing a semiconductor element comprises the steps of: forming a plurality of grooves on a first surface of a semiconductor multi-layer structure along a first direction: forming a plurality of multi-element bars by cleaving the semiconductor multi-layer structure along a second direction; placing at least one of the plurality of multi-element bars on a support stage; and cleaving the at least one of the plurality of multi-element bars along the plurality of grooves by moving a pressure member in a longitudinal direction of the at least one of the plurality of multi-element bars while a constant load is applied by the pressure member to a second surface of the at least one of the plurality of multi-element bars, the second surface being opposite a third surface corresponding to the first surface of the at least one of the plurality of multi-element bars.
    Type: Grant
    Filed: October 25, 2000
    Date of Patent: December 3, 2002
    Assignee: Matsushita Electronics Corporation
    Inventors: Keiji Yamane, Hideto Adachi, Akira Takamori
  • Patent number: 6444485
    Abstract: An n-type GaAs buffer layer 702, an n-type AlGaInP cladding layer 703, a multiple quantum well active layer 704 made of AlGaInP and GaInP, a first p-type AlGaInP cladding layer 705a, an optical guide layer 707, a second p-type cladding layer 705b, a p-type GaInP saturable absorption layer 706, and a third p-type AlGaInP cladding layer 707 are sequentially formed on an n-type GaAs substrate 701. In this structure, the volume of the saturable absorption layer is reduced, and the optical guide layer is provided. As the volume of the saturable absorption layer becomes smaller, the more easily the carrier density can be increased, the more easily the saturated state can be attained, and the more remarkable the saturable absorption effect becomes. Thus, a semiconductor laser having stable self-oscillation characteristics and, as a result, having a low relative noise intensity is realized.
    Type: Grant
    Filed: April 10, 2000
    Date of Patent: September 3, 2002
    Assignee: Matsushita Electric Industrial Co., Ltd.
    Inventors: Isao Kidoguchi, Hideto Adachi, Masaya Mannoh, Toshiya Fukuhisa, Akira Takamori