Abstract: The cleaning agent described above comprises a surfactant and an organic solvent, and the cleaning method described above is characterized by allowing the cleaning agent described above to flow on the surface of the material to be treated at a high speed to thereby clean the above surface. According to the present invention, deposits adhering firmly to a surface of a material to be treated can readily be removed without damaging the material to be treated.

Abstract: A substrate processing apparatus 10 for processing a glass substrate 50 comprises a slider 20 on which the glass substrate 50 is placed, a process chamber 30 that can be mounted on the slider 20, and light irradiation units 110, 120. The process chamber 30 comprises a supply inlet 33 for supplying process fluid, a drain outlet 34 for draining out the process fluid, and a processing space 32, wherein one plane of the processing space that corresponds to the region to be processed is opened. When the process chamber 30 is mounted on the placing member 20, the processing space 32 forms a processing space which is sealed with the glass substrate 50.

Abstract: A method for transferring semiconductor wafers can suppress the generation of native oxides or watermarks, or the like, in cleaning the semiconductor wafers. In the semiconductor wafer transfer method of the preferred embodiment, first and second process chambers, and a dry unit are vertically arranged in a housing. The preferred method includes transferring the wafer between these chambers and the dry unit by a first non-contact hold type of a transfer robot, transferring the wafer between the housing and a wafer cassette by a second non-contact hold type of a transfer robot, and feeding nitrogen gas into the housing from gas-feeding inlets.

Abstract: The cleaning method described above is characterized by allowing a cleaning agent comprising an oxidizing agent, a chelating agent and fluorine compound to flow on a surface of a material to be treated at a high speed to thereby clean the above surface according to the present invention, deposits adhering firmly to a surface of a material to be treated can readily be removed without damaging the material to be treated.

Abstract: There is provided a cleaning device capable of preventing a metal wiring layer or the like of an object to be treated, from being oxidized. The cleaning device comprises: a cleaning container 72 having a treating space S having a slightly larger volume than that of an object W to be treated; a fluid storage tank 30 for storing a cleaning fluid 32 for treating the object; supply lines 46A through 46D for supplying the cleaning fluid from the fluid storage tank to the cleaning container; and reflux lines 47A through 47D for returning the cleaning fluid from the cleaning container to the fluid storage tank, wherein the cleaning container, the fluid storage tank, the supply lines and the reflux lines are associated with each other for forming closed cleaning fluid circulating lines 51A through 51D. Thus, it is possible to prevent the metal wiring layer or the like of the object from being oxidized.

Abstract: A cleaning agent for use in the manufacture of a semiconductor device comprising an aqueous solution containing a quarternary ammonium salt and a fluoro compound, or an aqueous solution containing a quarternary ammonium salt and a fluoro compound, as well as an organic solvent selected from the group consisting of amides, lactones, nitriles, alcohols and esters. In the semiconductor device manufacturing process, after forming a mask with a photoresist, a wiring structure is formed by dry etching of a conductive layer, wherein a protecting deposition film has been formed on side walls of the conductive layer. Use of the cleaning agent enables the protecting deposition film to be removed in a highly reliable manner with the surface of the conductive layer being decontaminated and cleaned such that no corrosion of the conductive layer occurs.

Abstract: The cleaning method described above is characterized by allowing a cleaning agent comprising an oxidizing agent, a chelating agent and a fluorine compound to flow on a surface of a material to be treated at a bigh speed to thereby clean the above surface. according to the present invention, deposits adhering firmly to a surface of a material to be treated can readily be removed without damaging the material to be treated.

Abstract: The cleaning agent described above comprises a surfactant and an organic solvent, and the cleaning method described above is characterized by allowing the cleaning agent described above to flow on the surface of the material to be treated at a high speed to thereby clean the above surface. According to the present invention, deposits adhering firmly to a surface of a material to be treated can readily be removed without damaging the material to be treated.

Abstract: A cleaning agent for use in producing semiconductor devices. The cleaning agent is an aqueous solution containing (A) a fluorine-containing compound, (B) a salt of boric acid, (C) a water-soluble organic solvent, and optionally, (D) a specific quaternary ammonium salt or (D′) a specific ammonium salt of an organic carboxylic acid or a specific amine salt of an organic carboxylic acid. The polymeric deposit inside and around the via holes and on the side wall of the conductive line pattern formed during the dry etching process can be effectively removed by using the cleaning agent without affecting the dimensions of the via holes and the conductive line pattern.

Abstract: There is disclosed a cleaning liquid for producing a semiconductor device which comprises (A) fluorine-containing compound; (B) water-soluble or water-miscible organic solvent; and (C) inorganic acid and/or organic acid, optionally, further comprises (D) quaternary ammonium salt or (D') a specific organic carboxylic acid ammonium salt and/or an organic carboxylic acid amine salt; as well as a process for producing a semiconductor device by forming a resist pattern on a substrate equipped on the surface with an insulating film layer or a metallic electroconductive layer, forming a via hole or electric wiring by dry etching, removing the resist pattern by ashing treatment with oxygen plasma; and effecting an cleaning treatment with the above cleaning liquid. The above cleaning liquid and production process can readily remove the deposit polymer formed in the case of dry etching without impairing metallic film and insulating film.

Abstract: After the resist is removed with an alkaline solution, a noncorrosive rinse solution is applied to the substrate which is composed of (a) a water-soluble monovalent lower alcohol and an organic or inorganic acid, or (b) a water-soluble monovalent lower alcohol, an organic or inorganic acid and water or (c) an organic or inorganic acid. This rinse solution prevents corrosion completely when a resist is removed from Al-Si-Cu wiring :material, which is widely used as the wiring material for high-density integrated circuits.

Abstract: An MLR (multilayer resist) 3 is formed on a BPSG layer 2 on top of a silicon wafer 1, then dry etched using an etching gas 8 to form a contact hole 2a on the BPSG layer 2. Next, the polymer residues 9a and 9b adhering to the side walls of the contact hole 2a and the surface of the BPSG layer 2 are subjected to a cleaning treatment using a cleaning treating liquid that contains 0.04-0.12 wt % hydrogen fluoride, thereby removing the polymer residues 9a and 9b.During etching the presence of the polymer residue layer 9 prevents etching in the horizontal direction, thereby allowing the formation of a highly precise contact hole 2a. In addition, because the treating liquid has the composition described above, the aforementioned polymer residues 9a and 9b are removed, thereby avoiding any degradation of the electrical characteristics. In addition, corrosion of the side walls of the contact hole due to the cleaning treating liquid is prevented, thereby maintaining the high level of contact hole precision.