Abstract: A display portion is divided by scan lines and signal lines into sections where pixels are provided. Contact holes each for connecting common wiring and a common electrode together are not formed for all the pixels, but decimated so as to be arranged in zigzags.

Abstract: A display portion is divided by scan lines and signal lines into sections where pixels are provided. Contact holes each for connecting common wiring and a common electrode together are not formed for all the pixels, but decimated so as to be arranged in zigzags.

Abstract: A semi-transmissive type liquid-crystal display device suppresses the reduction and corrosion of the transmission or common electrode due to the cell corrosion reaction with a simple method. In each pixel region, the reflection electrode is formed over the glass plate, where the interlayer insulating film and the barrier metal film intervene between them. The reflection electrode is electrically connected to the transmission electrode by way of the barrier metal film. The transmission electrode and the corresponding scanning line thereto are apart from each other at a distance of 2 ?m (preferably, 3 ?m) or greater. A developer solution penetrating through the crack formed in the barrier metal film does not reach the transmission electrode (or common electrode), preventing the reduction and corrosion of the transmission or common electrode.

Abstract: Extraction wirings are respectively connected to a signal line of a switching element and a scanning line thereof, and led out to one side portion of a transparent insulating substrate. Conductive terminals respectively united with the extraction wiring are formed in tip end portions thereof, and a plurality of contact holes connected to the conductive terminals are formed on the conductive terminals so that a diver IC is mounted thereon by using conductive resin. Each of the extraction wirings is provided with a semiconductor film pattern in the vicinity of the contact hole for blocking the moisture in the conductive resin to reach the extraction wirings through an interlayer insulating film.

Abstract: A semi-transmissive type liquid-crystal display device suppresses the reduction and corrosion of the transmission or common electrode due to the cell corrosion reaction with a simple method. In each pixel region, the reflection electrode is formed over the glass plate, where the interlayer insulating film and the barrier metal film intervene between them. The reflection electrode is electrically connected to the transmission electrode by way of the barrier metal film. The transmission electrode and the corresponding scanning line thereto are apart from each other at a distance of 2 ?m (preferably, 3 ?m) or greater. A developer solution penetrating through the crack formed in the barrier metal film does not reach the transmission electrode (or common electrode), preventing the reduction and corrosion of the transmission or common electrode.

Abstract: A holding apparatus for a substrate cassette include a support base for holding the cassette with substrates. A tilting device is fixed to the support base for allowing the support base to rotate about a horizontal axis from a horizontal position, wherein top surfaces of the substrates are arranged upwardly, to an over vertical position, wherein the top surfaces of the substrates are arranged downwardly, by rotating the support base over 90 degrees. A storage method for a substrate cassette includes steps of storing a substrate in the cassette for substrates almost horizontally, fixing a cassette on a support base, and rotating the support base around a rotary shaft so that the substrate may rotate to the angle beyond 90 degrees.

Abstract: Disclosed is a photoresist film which is formed in a manner of covering at least a source electrode, a source line, a pixel electrode, a drain electrode, a drain line, a semiconductor film and a protective film, and further covering a gate insulting film in their vicinities. Moreover, wet and dry etchings are sequentially performed by using the photoresist film as a mask. Due to this etching, a residual pattern existing on the gate insulating film is etched.

Abstract: A display portion is divided by scan lines and signal lines into sections where pixels are provided. Contact holes each for connecting common wiring and a common electrode together are not formed for all the pixels, but decimated so as to be arranged in zigzags.

Abstract: A display portion is divided by scan lines and signal lines into sections where pixels are provided. Contact holes each for connecting common wiring and a common electrode together are not formed for all the pixels, but decimated so as to be arranged in zigzags.

Abstract: A display portion is divided by scan lines and signal lines into sections where pixels are provided. Contact holes each for connecting common wiring and a common electrode together are not formed for all the pixels, but decimated so as to be arranged in zigzags.

Abstract: Disclosed is a photoresist film which is formed in a manner of covering at least a source electrode, a source line, a pixel electrode, a drain electrode, a drain line, a semiconductor film and a protective film, and further covering a gate insulting film in their vicinities. Moreover, wet and dry etchings are sequentially performed by using the photoresist film as a mask. Due to this etching, a residual pattern existing on the gate insulating film is etched.

Abstract: Extraction wirings are respectively connected to a signal line of a switching element and a scanning line thereof, and led out to one side portion of a transparent insulating substrate. Conductive terminals respectively united with the extraction wiring are formed in tip end portions thereof, and a plurality of contact holes connected to the conductive terminals are formed on the conductive terminals so that a diver IC is mounted thereon by using conductive resin. Each of the extraction wirings is provided with a semiconductor film pattern in the vicinity of the contact hole for blocking the moisture in the conductive resin to reach the extraction wirings through an interlayer insulating film.

Abstract: A voltage of a front channel 42 (gate side wiring) of a thin film transistor is made equal to a voltage of a back channel 44 (liquid crystal alignment side) thereof by electrically connecting a gate electrode 2 and a back channel electrode 82 through a gate contact hole 10 to a semiconductor layer 4 constituting the thin film transistor. The thin film transistor is fabricated through four patterning steps by simultaneously etching the semiconductor layer and a transparent electrode by using a photo resist on the front channel.

Abstract: A display portion is divided by scan lines and signal lines into sections where pixels are provided. Contact holes each for connecting common wiring and a common electrode together are not formed for all the pixels, but decimated so as to be arranged in zigzags.