Patents by Inventor Hidetoshi Hanaoka

Hidetoshi Hanaoka has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Publication number: 20220376791
    Abstract: Provided is a communication apparatus for making connection to a communication network, including: an optical network unit; and an external power supply input/output terminal, the communication apparatus being configured such that electrical power is fed to the optical network unit from an external terminal that is connected to the external power supply input/output terminal and functions as an auxiliary power supply.
    Type: Application
    Filed: October 31, 2019
    Publication date: November 24, 2022
    Inventors: Toshimitsu TANAKA, Naoki HANAOKA, Toshihiro HAYASHI, Hiroya MINAMI, Hidetoshi TAKADA
  • Patent number: 11488807
    Abstract: An apparatus for plasma processing includes a chamber, a lower electrode on which a substrate is placed in the chamber, an edge ring disposed around the lower electrode, an upper electrode facing the lower electrode in the chamber, a member disposed around the upper electrode, a gas supply section configured to supply a process gas to a space between the member and the lower electrode, and a power supply for applying radio frequency power to the lower electrode or the upper electrode to generate a plasma of the process gas. The member includes an inner member and an outer member positioned outside the inner member, and the outer member is disposed outside the edge ring in a radial direction. At least part of the outer member is movable in a vertical direction.
    Type: Grant
    Filed: August 28, 2020
    Date of Patent: November 1, 2022
    Assignee: Tokyo Electron Limited
    Inventors: Kota Shihommatsu, Junji Ishibashi, Junichi Sasaki, Hidetoshi Hanaoka
  • Publication number: 20220336193
    Abstract: A disclose substrate support of a plasma processing apparatus has an electrostatic chuck that holds an edge ring. The electrostatic chuck includes a first electrode and a second electrode. In an execution period of a first plasma processing on a substrate, first potentials which are ones out of potentials same as each other and potentials different from each other are set to the first and second electrodes, respectively. In an execution period of a second plasma processing on the substrate, second potentials which are others out of the potentials same as each other and the potentials different from each other are set to the first and second electrodes, respectively. The respective potentials of the first electrode and the second electrode are switched from the first potentials to the second potentials.
    Type: Application
    Filed: July 1, 2022
    Publication date: October 20, 2022
    Applicant: Tokyo Electron Limited
    Inventors: Junichi SASAKI, Yasuharu SASAKI, Hidetoshi HANAOKA, Tomohiko AKIYAMA
  • Patent number: 11417500
    Abstract: A disclose substrate support of a plasma processing apparatus has an electrostatic chuck that holds an edge ring. The electrostatic chuck includes a first electrode and a second electrode. In an execution period of a first plasma processing on a substrate, first potentials which are ones out of potentials same as each other and potentials different from each other are set to the first and second electrodes, respectively. In an execution period of a second plasma processing on the substrate, second potentials which are others out of the potentials same as each other and the potentials different from each other are set to the first and second electrodes, respectively. The respective potentials of the first electrode and the second electrode are switched from the first potentials to the second potentials.
    Type: Grant
    Filed: September 22, 2020
    Date of Patent: August 16, 2022
    Assignee: Tokyo Electron Limited
    Inventors: Junichi Sasaki, Yasuharu Sasaki, Hidetoshi Hanaoka, Tomohiko Akiyama
  • Publication number: 20210305023
    Abstract: An edge ring formed of a material including boron carbide and silicon carbide is provided. The content by percentage of the boron carbide contained in the material is in a range between 30% and 50%.
    Type: Application
    Filed: March 9, 2021
    Publication date: September 30, 2021
    Inventors: Masahiro OGASAWARA, Hidetoshi HANAOKA, Masashi IKEGAMI, Naoyuki SATOH, Toshiya TSUKAHARA
  • Publication number: 20210142983
    Abstract: There is provision of a plasma processing apparatus including a processing vessel, a first member provided in the processing vessel, and a second member provided outside the first member. In at least one of the first member and the second member, a gas flow passage is formed, and the gas flow passage is configured to cause a gas to flow into a gap between the first member and the second member.
    Type: Application
    Filed: November 2, 2020
    Publication date: May 13, 2021
    Inventors: Shintaro IKEDA, Hidetoshi HANAOKA, Naoki TAMARU
  • Publication number: 20210118647
    Abstract: A disclose substrate support of a plasma processing apparatus has an electrostatic chuck that holds an edge ring. The electrostatic chuck includes a first electrode and a second electrode. In an execution period of a first plasma processing on a substrate, first potentials which are ones out of potentials same as each other and potentials different from each other are set to the first and second electrodes, respectively. In an execution period of a second plasma processing on the substrate, second potentials which are others out of the potentials same as each other and the potentials different from each other are set to the first and second electrodes, respectively. The respective potentials of the first electrode and the second electrode are switched from the first potentials to the second potentials.
    Type: Application
    Filed: September 22, 2020
    Publication date: April 22, 2021
    Applicant: Tokyo Electron Limited
    Inventors: Junichi SASAKI, Yasuharu SASAKI, Hidetoshi HANAOKA, Tomohiko AKIYAMA
  • Publication number: 20210082669
    Abstract: A plasma processing apparatus includes a process container that forms a process space to accommodate a target substrate, and a first electrode and a second electrode disposed opposite each other inside the process container. The first electrode is an upper electrode and the second electrode is a lower electrode and configured to support the target substrate through a mount face. A correction ring is disposed to surround the target substrate placed on the mount face of the second electrode. The correction ring includes a combination of a first ring to be around the target substrate and a second ring arranged around or above the first ring. A power supply unit is configured to apply a first electric potential and a second electric potential respectively to the first ring and the second ring to generate a potential difference between the first and second rings. The power supply unit is configured to variably set the potential difference.
    Type: Application
    Filed: November 25, 2020
    Publication date: March 18, 2021
    Applicant: TOKYO ELECTRON LIMITED
    Inventors: Akira KOSHIISHI, Masaru SUGIMOTO, Kunihiko HINATA, Noriyuki KOBAYASHI, Chishio KOSHIMIZU, Ryuji OHTANI, Kazuo KIBI, Masashi SAITO, Naoki MATSUMOTO, Yoshinobu OHYA, Manabu IWATA, Daisuke YANO, Yohei YAMAZAWA, Hidetoshi HANAOKA, Toshihiro HAYAMI, Hiroki YAMAZAKI, Manabu SATO
  • Publication number: 20210074520
    Abstract: An apparatus for plasma processing includes a chamber, a lower electrode on which a substrate is placed in the chamber, an edge ring disposed around the lower electrode, an upper electrode facing the lower electrode in the chamber, a member disposed around the upper electrode, a gas supply section configured to supply a process gas to a space between the member and the lower electrode, and a power supply for applying radio frequency power to the lower electrode or the upper electrode to generate a plasma of the process gas. The member includes an inner member and an outer member positioned outside the inner member, and the outer member is disposed outside the edge ring in a radial direction. At least part of the outer member is movable in a vertical direction.
    Type: Application
    Filed: August 28, 2020
    Publication date: March 11, 2021
    Inventors: Kota SHIHOMMATSU, Junji ISHIBASHI, Junichi SASAKI, Hidetoshi HANAOKA
  • Patent number: 10854431
    Abstract: A plasma processing method includes executing an etching process that includes supplying an etching gas into a process container in which a target substrate is supported on a second electrode serving as a lower electrode, and applying an RF power for plasma generation and an RF power for ion attraction to turn the etching gas into plasma and to subject the target substrate to etching. The etching process includes applying a negative DC voltage to a first electrode serving as an upper electrode during the etching to increase an absolute value of self-bias on the first electrode. The etching process includes releasing DC electron current generated by the negative DC voltage to ground through plasma and a conductive member disposed as a ring around the first electrode, by using a first state where the conductive member is connected to a ground potential portion.
    Type: Grant
    Filed: December 10, 2019
    Date of Patent: December 1, 2020
    Assignee: TOKYO ELECTRON LIMITED
    Inventors: Akira Koshiishi, Masaru Sugimoto, Kunihiko Hinata, Noriyuki Kobayashi, Chishio Koshimizu, Ryuji Ohtani, Kazuo Kibi, Masashi Saito, Naoki Matsumoto, Yoshinobu Ohya, Manabu Iwata, Daisuke Yano, Yohei Yamazawa, Hidetoshi Hanaoka, Toshihiro Hayami, Hiroki Yamazaki, Manabu Sato
  • Patent number: 10847348
    Abstract: A plasma processing apparatus includes a processing vessel, a lower electrode, an annular member, an inner upper electrode, an outer upper electrode, a processing gas supply, a first high frequency power supply and a first DC power supply. The lower electrode is configured to place a processing target substrate. The annular member is disposed on an outer peripheral portion of the lower electrode. The inner upper electrode is disposed to face the lower electrode. The outer upper electrode is disposed at an outside of the inner upper electrode. The first high frequency power supply applies a first high frequency power. The first DC power supply applies a first variable DC voltage to the outer upper electrode. At least a part of a surface of the outer upper electrode exposed to the processing space is located higher than a surface of the inner upper electrode exposed to the processing space.
    Type: Grant
    Filed: December 2, 2019
    Date of Patent: November 24, 2020
    Assignee: TOKYO ELECTRON LIMITED
    Inventors: Toshiya Tsukahara, Shuhei Yamabe, Kota Yachi, Tetsuji Sato, Yohei Uchida, Ayuta Suzuki, Yosuke Tamura, Hidetoshi Hanaoka, Junichi Sasaki
  • Publication number: 20200312634
    Abstract: A plasma processing apparatus includes a conductive mounting table, a conductive member, and a first insulating member. The conductive mounting table has a mounting portion on which a substrate is mounted and a stepped portion positioned lower than the mounting portion. The conductive member is disposed on the stepped portion and extends outward over an outer periphery of the mounting table. Further, a first insulating member is disposed on or above an upper surface of the conductive member.
    Type: Application
    Filed: March 26, 2020
    Publication date: October 1, 2020
    Applicant: TOKYO ELECTRON LIMITED
    Inventors: Hirofumi OHTA, Hidetoshi HANAOKA, Ayuta SUZUKI
  • Publication number: 20200176226
    Abstract: A plasma processing apparatus includes a processing vessel, a lower electrode, an annular member, an inner upper electrode, an outer upper electrode, a processing gas supply, a first high frequency power supply and a first DC power supply. The lower electrode is configured to place a processing target substrate. The annular member is disposed on an outer peripheral portion of the lower electrode. The inner upper electrode is disposed to face the lower electrode. The outer upper electrode is disposed at an outside of the inner upper electrode. The first high frequency power supply applies a first high frequency power. The first DC power supply applies a first variable DC voltage to the outer upper electrode. At least a part of a surface of the outer upper electrode exposed to the processing space is located higher than a surface of the inner upper electrode exposed to the processing space.
    Type: Application
    Filed: December 2, 2019
    Publication date: June 4, 2020
    Inventors: Toshiya Tsukahara, Shuhei Yamabe, Kota Yachi, Tetsuji Sato, Yohei Uchida, Ayuta Suzuki, Yosuke Tamura, Hidetoshi Hanaoka, Junichi Sasaki
  • Publication number: 20200111645
    Abstract: A plasma processing method includes executing an etching process that includes supplying an etching gas into a process container in which a target substrate is supported on a second electrode serving as a lower electrode, and applying an RF power for plasma generation and an RF power for ion attraction to turn the etching gas into plasma and to subject the target substrate to etching. The etching process includes applying a negative DC voltage to a first electrode serving as an upper electrode during the etching to increase an absolute value of self-bias on the first electrode. The etching process includes releasing DC electron current generated by the negative DC voltage to ground through plasma and a conductive member disposed as a ring around the first electrode, by using a first state where the conductive member is connected to a ground potential portion.
    Type: Application
    Filed: December 10, 2019
    Publication date: April 9, 2020
    Applicant: TOKYO ELECTRON LIMITED
    Inventors: Akira KOSHIISHI, Masaru SUGIMOTO, Kunihiko HINATA, Noriyuki KOBAYASHI, Chishio KOSHIMIZU, Ryuji OHTANI, Kazuo KIBI, Masashi SAITO, Naoki MATSUMOTO, Yoshinobu OHYA, Manabu IWATA, Daisuke YANO, Yohei YAMAZAWA, Hidetoshi HANAOKA, Toshihiro HAYAMI, Hiroki YAMAZAKI, Manabu SATO
  • Patent number: 10580622
    Abstract: A plasma processing apparatus of exciting a processing gas into plasma by applying a high frequency power between an upper electrode and a lower electrode provided within a processing chamber and performing a plasma process on a target object to be processed with the plasma includes a DC power supply configured to apply a DC voltage to the upper electrode; a ground electrode connected to the DC power supply; and an annular shield member provided outside the ground electrode. A groove is formed into a downward recess at an outer peripheral portion of the ground electrode, and an upper end of the shield member is positioned above an upper end of the peripheral portion of the ground electrode. A protruding portion, which is protruded toward a center of the ground electrode, is formed at a portion of the shield member positioned above the ground electrode.
    Type: Grant
    Filed: April 2, 2018
    Date of Patent: March 3, 2020
    Assignee: TOKYO ELECTRON LIMITED
    Inventor: Hidetoshi Hanaoka
  • Patent number: 10546727
    Abstract: A plasma etching apparatus includes an upper electrode and a lower electrode, between which plasma of a process gas is generated to perform plasma etching on a wafer W. The apparatus further comprises a cooling ring disposed around the wafer, a correction ring disposed around the cooling ring, and a variable DC power supply directly connected to the correction ring, the DC voltage being preset to provide the correction ring with a negative bias, relative to ground potential, for attracting ions in the plasma and to increase temperature of the correction ring to compensate for a decrease in temperature of a space near the edge of the target substrate due to the cooling ring.
    Type: Grant
    Filed: September 7, 2016
    Date of Patent: January 28, 2020
    Assignee: TOKYO ELECTRON LIMITED
    Inventors: Akira Koshiishi, Masaru Sugimoto, Kunihiko Hinata, Noriyuki Kobayashi, Chishio Koshimizu, Ryuji Ohtani, Kazuo Kibi, Masashi Saito, Naoki Matsumoto, Yoshinobu Ohya, Manabu Iwata, Daisuke Yano, Yohei Yamazawa, Hidetoshi Hanaoka, Toshihiro Hayami, Hiroki Yamazaki, Manabu Sato
  • Patent number: 10529539
    Abstract: An apparatus includes an upper electrode and a lower electrode for supporting a wafer disposed opposite each other within a process chamber. A first RF power supply configured to apply a first RF power having a relatively higher frequency, and a second RF power supply configured to apply a second RF power having a relatively lower frequency is connected to the lower electrode. A variable DC power supply is connected to the upper electrode. A process gas is supplied into the process chamber to generate plasma of the process gas so as to perform plasma etching.
    Type: Grant
    Filed: October 11, 2016
    Date of Patent: January 7, 2020
    Assignee: TOKYO ELECTRON LIMITED
    Inventors: Akira Koshiishi, Masaru Sugimoto, Kunihiko Hinata, Noriyuki Kobayashi, Chishio Koshimizu, Ryuji Ohtani, Kazuo Kibi, Masashi Saito, Naoki Matsumoto, Manabu Iwata, Daisuke Yano, Yohei Yamazawa, Hidetoshi Hanaoka, Toshihiro Hayami, Hiroki Yamazaki, Manabu Sato
  • Publication number: 20180294147
    Abstract: A plasma processing apparatus of exciting a processing gas into plasma by applying a high frequency power between an upper electrode and a lower electrode provided within a processing chamber and performing a plasma process on a target object to be processed with the plasma includes a DC power supply configured to apply a DC voltage to the upper electrode; a ground electrode connected to the DC power supply; and an annular shield member provided outside the ground electrode. A groove is formed into a downward recess at an outer peripheral portion of the ground electrode, and an upper end of the shield member is positioned above an upper end of the peripheral portion of the ground electrode. A protruding portion, which is protruded toward a center of the ground electrode, is formed at a portion of the shield member positioned above the ground electrode.
    Type: Application
    Filed: April 2, 2018
    Publication date: October 11, 2018
    Inventor: Hidetoshi Hanaoka
  • Patent number: 9966233
    Abstract: A plasma processing apparatus of exciting a processing gas into plasma by applying a high frequency power between an upper electrode and a lower electrode provided within a processing chamber and performing a plasma process on a target object to be processed with the plasma includes a DC power supply configured to apply a DC voltage to the upper electrode; a ground electrode connected to the DC power supply; and an annular shield member provided outside the ground electrode. A groove is formed into a downward recess at an outer peripheral portion of the ground electrode, and an upper end of the shield member is positioned above an upper end of the peripheral portion of the ground electrode. A protruding portion, which is protruded toward a center of the ground electrode, is formed at a portion of the shield member positioned above the ground electrode.
    Type: Grant
    Filed: April 4, 2013
    Date of Patent: May 8, 2018
    Assignee: TOKYO ELECTRON LIMITED
    Inventor: Hidetoshi Hanaoka
  • Publication number: 20170032936
    Abstract: An apparatus includes an upper electrode and a lower electrode for supporting a wafer disposed opposite each other within a process chamber. A first RF power supply configured to apply a first RF power having a relatively higher frequency, and a second RF power supply configured to apply a second RF power having a relatively lower frequency is connected to the lower electrode. A variable DC power supply is connected to the upper electrode. A process gas is supplied into the process chamber to generate plasma of the process gas so as to perform plasma etching.
    Type: Application
    Filed: October 11, 2016
    Publication date: February 2, 2017
    Applicant: TOKYO ELECTRON LIMITED
    Inventors: Akira KOSHIISHI, Masaru SUGIMOTO, Kunihiko HINATA, Noriyuki KOBAYASHI, Chishio KOSHIMIZU, Ryuji OHTANI, Kazuo KIBI, Masashi SAITO, Naoki MATSUMOTO, Manabu IWATA, Daisuke YANO, Yohei YAMAZAWA, Hidetoshi HANAOKA, Toshihiro HAYAMI, Hiroki YAMAZAKI, Manabu SATO