Abstract: This information terminal (1) includes a terminal display portion (12) and a control portion (11) performing control of transmitting an image signal configured to display an image on an external display device (2). The control portion is configured to perform control of acquiring information about the posture of the external display device and transmitting the image signal of the image according to the posture of the external display device to the external display device on the basis of the information about the posture which has been acquired.

Abstract: An image output apparatus includes an image processing component, an OSD production component and an output component. The image processing component is configured to perform an image processing on input image data to generate processed image data. The OSD production component is configured to produce OSD data that specifies color data according to a display characteristic of a display apparatus that is configured to be connected to the image output apparatus. The output component is configured to combine the OSD data with the processed image data to output output image data.

Abstract: In a television, which can be connected to a portable information terminal, it is possible to display video based on the data of a multimedia file stored on a storage medium even in cases where there is no built-in decoder. In cases where a TV itself does not possess a decoder which can decode the data of a multimedia file selected by the user from the multimedia files stored on the USB memory, the CPU of the TV transmits to a smartphone the data of the selected multimedia file and a decoding request command to request that the data be decoded, thus receiving a video signal and/or an audio signal obtained by various types of decoders of the smartphone. Consequently, the CPU of the TV can output video and/or audio to a display unit and a speaker on the basis of the data of the selected multimedia file.

Abstract: A method for producing a silicon carbide single crystal including a steps of, loading a sublimation-raw material into a reaction vessel of a production apparatus for a silicon carbide single crystal, and placing a seed crystal for a silicon carbide single crystal in such a manner that the seed crystal substantially faces the sublimation-raw material, and re-crystallizing the sublimation-raw material sublimated by heating on a surface of the seed crystal to grow a silicon carbide single crystal, the method further including applying a thermosetting material containing silicon component to a back surface of the seed crystal before the placing the seed crystal in the reaction vessel of the production apparatus for the silicon carbide single crystal.

Abstract: Disclosed is a television receiver comprising: a receiving section to receive a broadcast signal associated with predetermined broadcasting; a video display section to display received video based on the broadcast signal received by the receiving section in a predetermined display region; a judgment region setting section to set a judgment region for judging whether or not the broadcasting has ended, the judgment region being in the display region of the video display section; a judging section to judge whether or not the broadcasting has ended, based on a received video in the judgment region of the received video corresponding to the broadcast signals; and a video stop control section to switch off the power source of the television receiver, on a basis that the judging section judges that the broadcasting has ended.

Abstract: A gate wiring electrode is formed into a ladder-like pattern. Moreover, between source electrodes and drain electrodes in the entire Switch MMIC, the gate wiring electrodes are disposed. Furthermore, at a cross part between the gate wiring electrode and the source electrode or the drain electrode, a nitride film having a large relative dielectric constant and a polyimide or a hollow part having a small relative dielectric constant are disposed. Accordingly, a capacitance at the cross part is reduced. Thus, a second harmonic wave level can be lowered. Moreover, a leak of a high-frequency signal between the drain electrode and the source electrode can be prevented. Thus, a third harmonic level can be lowered. Consequently, distortion characteristics of the Switch MMIC can be significantly improved.

Abstract: A system controller displays all setup items on a setup screen, at the time of a setup mode in which a setup button 18a of a remote controller is depressed, in case that it is judged that a disc is not loaded on a tray of an apparatus itself, and, in case that it is judged that the disc is loaded, then, judges a type of the disc which is loaded, and on the basis of a result of that judgment, displays only a setup item which can be used for the loaded disc, and does not display a setup item which can not be used.

Abstract: Protecting elements are respectively connected between a control terminal Ctl and a ground terminal GND of a logic circuit L, between a point Cp and a ground terminal GND, and between a power supply terminal VDD and a ground terminal GND thereof. With this, an E-FET, constituting an inverter 70, and capacitors Ci and Cr can be protected from electrostatic breakdown due to external static electricity. Since the protecting element can be constituted by requisite components for the logic circuit, an additional step or structure is not especially required to provide the protecting element.

Abstract: Disclosed is a television receiver comprising: a receiving section to receive a broadcast signal associated with predetermined broadcasting; a video display section to display received video based on the broadcast signal received by the receiving section in a predetermined display region; a judgment region setting section to set a judgment region for judging whether or not the broadcasting has ended, the judgment region being in the display region of the video display section; a judging section to judge whether or not the broadcasting has ended, based on a received video in the judgment region of the received video corresponding to the broadcast signals; and a video stop control section to switch off the power source of the television receiver, on a basis that the judging section judges that the broadcasting has ended.

Abstract: A gate wiring electrode is formed into a ladder-like pattern. Moreover, between source electrodes and drain electrodes in the entire Switch MMIC, the gate wiring electrodes are disposed. Furthermore, at a cross part between the gate wiring electrode and the source electrode or the drain electrode, a nitride film having a large relative dielectric constant and a polyimide or a hollow part having a small relative dielectric constant are disposed. Accordingly, a capacitance at the cross part is reduced. Thus, a second harmonic wave level can be lowered. Moreover, a leak of a high-frequency signal between the drain electrode and the source electrode can be prevented. Thus, a third harmonic level can be lowered. Consequently, distortion characteristics of the Switch MMIC can be significantly improved.

Abstract: Protecting elements are respectively connected between a control terminal Ctl and a ground terminal GND of a logic circuit L, between a point Cp and a ground terminal GND, and between a power supply terminal VDD and a ground terminal GND thereof. With this, an E-FET, constituting an inverter 70, and capacitors Ci and Cr can be protected from electrostatic breakdown due to external static electricity. Since the protecting element can be constituted by requisite components for the logic circuit, an additional step or structure is not especially required to provide the protecting element.

Abstract: A semiconductor switching device includes a plurality of metal layers. At least one of the metal layers forming a Schottky junction with a semi-insulating substrate or an insulating layer on a substrate. The device also includes an impurity diffusion region, and a high-concentration impurity region formed between two of the metal layers or between one of the metal layers and the impurity diffusion region so as to suppress expansion of a depletion layer from the corresponding metal layer.

Abstract: A Schottky barrier diode has a Schottky electrode formed on an operation region of a GaAs substrate and an ohmic electrode surrounding the Schottky electrode. The ohmic electrode is disposed directly on an impurity-implanted region formed on the substrate. A nitride film insulates the ohmic electrode from a wiring layer connected to the Schottky electrode crossing over the ohmic electrode. The planar configuration of this device does not include the conventional polyimide layer, and thus has a better high frequency characteristics than conventional devices.

Abstract: Since a 5 GHz-band broadband has a frequency twice that of 2.4 GHz, the parasitic capacitance greatly influences deterioration in isolation of a switching device used in this frequency region. Therefore, to improve isolation, a shunt FET is added to the device. The switching device also includes a protecting element that has a first n+-type region, an insulating region and a second n+-type region. This protecting element is connected in parallel between two electrodes of the shunt FET. Since electrostatic charges are discharged between the first and second n+-type regions, the electrostatic energy reaching an operation region of the shunt FET can be reduced without an increase in parasitic capacitance.

Abstract: A system controller displays all setup items on a setup screen, at the time of a setup mode in which a setup button 18a of a remote controller is depressed, in case that it is judged that a disc is not loaded on a tray of an apparatus itself, and, in case that it is judged that the disc is loaded, then, judges a type of the disc which is loaded, and on the basis of a result of that judgment, displays only a setup item which can be used for the loaded disc, and does not display a setup item which can not be used.

Abstract: A semiconductor switching device includes a plurality of metal layers. At least one of the metal layers forming a Schottky junction with a semi-insulating substrate or an insulating layer on a substrate. The device also includes an impurity diffusion region, and a high-concentration impurity region formed between two of the metal layers or between one of the metal layers and the impurity diffusion region so as to suppress expansion of a depletion layer from the corresponding metal layer.

Abstract: An integrated Schottky barrier diode chip includes a compound semiconductor substrate, a plurality of Schottky barrier diodes formed on the substrate and an insulating region formed on the substrate by an on implantation. The insulating region electrically separates a portion of a diode at a cathode voltage from a portion of the diode at an anode voltage. Because of the absence of a polyimide layer and trench structures, this planar device configuration results in simpler manufacturing method and improved device characteristics.

Abstract: A Schottky barrier diode has a Schottky contact region formed in an n epitaxial layer disposed on a GaAs substrate and an ohmic electrode surrounding the Schottky contact region. The ohmic electrode is disposed directly on an impurity-implanted region formed on the substrate. An insulating region is formed through the n epitaxial layer so that an anode bonding pad is isolated form other elements of the device at a cathode voltage. The planar configuration of this device does not include the conventional polyimide layer, and thus has a better high frequency characteristics than conventional devices.

Abstract: Since a 5 GHz-band broadband has a frequency twice that of 2.4 GHz, the parasitic capacitance greatly influences deterioration in isolation of a switching device used in this frequency region. Therefore, to improve isolation, a shunt FET is added to the device. The switching device also includes a protecting element that has a first n+-type region, an insulating region and a second n+-type region. This protecting element is connected in parallel between two electrodes of the shunt FET. Since electrostatic charges are discharged between the first and second n+-type regions, the electrostatic energy reaching an operation region of the shunt FET can be reduced without an increase in parasitic capacitance.

Abstract: A Schottky barrier diode has a Schottky electrode formed on an operation region of a GaAs substrate and an ohmic electrode surrounding the Schottky electrode. The ohmic electrode is disposed directly on an impurity-implanted region formed on the substrate. A nitride film insulates the ohmic electrode from a wiring layer connected to the Schottky electrode crossing over the ohmic electrode. The planar configuration of this device does not include the conventional polyimide layer, and thus has a better high frequency characteristics than conventional devices.