Abstract: A gas wiping nozzle manufactured from parts divided along the slit length direction and maintains a gap in the width direction over the length direction in high temperature atmospheres and a method for manufacturing a hot-dip metal strip. In a gas wiping nozzle, a first and a second nozzle member are each divided along the length direction X of a slit into a plurality of nozzle members. The dimension of a divided face of the first nozzle member is 1.5T1 or more in a section of the first nozzle member where T1 is the thickness of the first nozzle member in the width direction Z of the slit, and the dimension of a divided face of the second nozzle member is 1.5T2 or more in a section of the second nozzle member where T2 is the thickness of the second nozzle member in the width direction Z of the slit.

Abstract: An absorber with a top sheet, covering the other surface of the absorber with a back sheet, and attaching a hook member of a mechanical fastener to each of a front side and a back side of the back sheet. The hook member is formed of a sheet-like base portion and a large number of hook portions. Each of the hook portions has a support column extending from the base portion to a side opposite to the back sheet and a protruding portion which is located at an end of the support column and in which a length of a protrusion extending toward a distal end portion side of each of the front side and the back side is longer than a length of a protrusion extending toward a crotch portion.

Abstract: A source electrode (5), a drain electrode (6) and a T-shaped gate electrode (9) are formed on a GaN-based semiconductor layer (3,4) to form a transistor. An insulating film (10,11) covering the T-shaped gate electrode (9) is formed. A property of the transistor is evaluated to obtain an evaluation result. A film type, a film thickness or a dielectric constant of the insulating film (10,11) is adjusted in accordance with the evaluation result to make a property of the transistor close to a target property.

Abstract: To make gel blocking less likely to occur, to enable and improve liquid absorption speed and absorption capability and to enable reversion to be prevented, without impairing the feeling when worn. An absorbent body is provided with a water-absorbent fiber stack including pulp fibers and a highly water-absorbent polymer, and a cover sheet covering at least a skin-facing surface of the water-absorbent fiber stack. Multiple protruding portions which protrude outward, and recessed portions that are recessed and are adjacent to the protruding portions are formed on the non-skin facing surface of the cover sheet, and the water-absorbent fiber stacks are stacked in the recessed portions.

Abstract: A source electrode (5), a drain electrode (6) and a T-shaped gate electrode (9) are formed on a GaN-based semiconductor layer (3,4) to form a transistor. An insulating film (10,11) covering the T-shaped gate electrode (9) is formed. A property of the transistor is evaluated to obtain an evaluation result. A film type, a film thickness or a dielectric constant of the insulating film (10,11) is adjusted in accordance with the evaluation result to make a property of the transistor close to a target property.

Abstract: A semiconductor device includes: a substrate; a nitride semiconductor film on the substrate; a schottky electrode on the nitride semiconductor film; a first insulating film on the nitride semiconductor film, contacting at least part of a side surface of the schottky electrode, forming an interface with the nitride semiconductor film and formed of SiN; and a second insulating film covering the schottky electrode and the first insulating film and formed of AlO whose atomic layers are alternately disposed.

Abstract: A semiconductor device includes: a substrate; a nitride semiconductor film on the substrate; a schottky electrode on the nitride semiconductor film; a first insulating film on the nitride semiconductor film, contacting at least part of a side surface of the schottky electrode, forming an interface with the nitride semiconductor film and formed of SiN; and a second insulating film covering the schottky electrode and the first insulating film and formed of AlO whose atomic layers are alternately disposed.

Abstract: A semiconductor device includes a semiconductor substrate, a first metal layer, a barrier metal layer, and a second metal layer. The semiconductor substrate includes a front surface and a back surface. A semiconductor element and an electrode of the semiconductor element are located on the front surface. An opening in the back surface reaches a lower surface of the electrode, and the opening is defined by a side surface and a bottom surface. The first metal layer covers the side surface and the bottom surface. The barrier metal layer covers the first metal layer in the opening. The second metal layer is in contact with solder in the opening and is closer to the electrode than parts of the barrier metal layer. The second metal layer is laminated on the barrier metal layer and covers at least a part of the barrier metal layer in the opening.

Abstract: A semiconductor device includes a semiconductor substrate having opposed main and back surfaces; first and second electrodes in a device region of the substrate, and spaced apart from each other; a metal film on the main surface and joined to the second electrode; an air gap between part of the main surface and the metal film, enveloping the first electrode, and having an opening; a cured resin closing the opening; a liquid repellent film increasing contact angle of the resin, relative to contact angles on the substrate and the metal film; a first metal film joined to the metal film, covering the metal film and the cured resin, and joined to an outer peripheral region of the substrate, at a periphery of the device region; and a second metal film on the back surface and connected to the first electrode through a via hole penetrating the substrate.

Abstract: A semiconductor device includes: a Si substrate having first and second major surfaces facing in opposite directions; a buffer layer of AlxGa1-xN (0?x?1) on the first major surface of the Si substrate; an epitaxially grown crystalline layer of AlyGa1-yN (0?y?1, x?y) on the buffer layer; a transistor on the epitaxially grown crystalline layer; and a filler of AlxGa1-xN and having the same x as the buffer layer. A through hole in the Si substrate extends from the second major surface to the buffer layer, and the through hole is filled with the filler.

Abstract: A semiconductor device includes a semiconductor substrate, a first metal layer, a barrier metal layer, and a second metal layer. The semiconductor substrate includes a front surface and a back surface. A semiconductor element and an electrode of the semiconductor element are located on the front surface. An opening in the back surface reaches a lower surface of the electrode, and the opening is defined by a side surface and a bottom surface. The first metal layer covers the side surface and the bottom surface. The barrier metal layer covers the first metal layer in the opening The second metal layer is in contact with solder in the opening and is closer to the electrode than parts of the barrier metal layer.

Abstract: A semiconductor device includes: a Si substrate having first and second major surfaces facing in opposite directions; a buffer layer of AlxGa1-xN (0?x?1) on the first major surface of the Si substrate; an epitaxially grown crystalline layer of AlyGa1-yN (0?y?1, x?y) on the buffer layer; a transistor on the epitaxially grown crystalline layer; and a filler of AlxGa1-xN and having the same x as the buffer layer. A through hole in the Si substrate extends from the second major surface to the buffer layer, and the through hole is filled with the filler.

Abstract: A semiconductor device includes a semiconductor substrate having opposed main and back surfaces; first and second electrodes in a device region of the substrate, and spaced apart from each other; a metal film on the main surface and joined to the second electrode; an air gap between part of the main surface and the metal film, enveloping the first electrode, and having an opening; a cured resin closing the opening; a liquid repellent film increasing contact angle of the resin, relative to contact angles on the substrate and the metal film; a first metal film joined to the metal film, covering the metal film and the cured resin, and joined to an outer peripheral region of the substrate, at a periphery of the device region; and a second metal film on the back surface and connected to the first electrode through a via hole penetrating the substrate.

Abstract: A semiconductor device includes: a semiconductor substrate having a main surface; an electrode in a device region on the main surface; a metal wiring on the main surface and having a first end connected to the electrode; an electrode pad outside the device region and spaced from the metal wiring; an air gap between the main surface and an air gap forming film on the main surface, enveloping the first end of the metal wiring and the electrode, and having a first opening; a resin closing the first opening and covering a second end of the metal wiring; a liquid repellent film facing the air gap and increasing contact angle of the resin, when liquid, relative to contact angles on the semiconductor substrate and the air gap forming film; and a metal film connecting the metal wiring to the electrode pad through a second opening located in the resin.

Abstract: A method of manufacturing a semiconductor device includes forming an insulating film on a surface of a semiconductor layer, forming a resist on a surface of the insulating film, the resist having an opening, forming a hardened layer on an inner circumference of the resist by attaching a pattern shrinking agent to the resist, the pattern shrinking agent undergoing a cross-linking reaction with the resist, etching the insulating film using the resist and the hardened layer as masks, removing the hardened layer, and forming a metal layer on a surface of the semiconductor layer, on a surface of the insulating film, and on a surface of the resist. The method further includes removing the resist and the portion of the metal layer on the surface of the resist by lift-off.

Abstract: A semiconductor device includes: a semiconductor substrate having a main surface; an electrode in a device region on the main surface; a metal wiring on the main surface and having a first end connected to the electrode; an electrode pad outside the device region and spaced from the metal wiring; an air gap between the main surface and an air gap forming film on the main surface, enveloping the first end of the metal wiring and the electrode, and having a first opening; a resin closing the first opening and covering a second end of the metal wiring; a liquid repellent film facing the air gap and increasing contact angle of the resin, when liquid, relative to contact angles on the semiconductor substrate and the air gap forming film; and a metal film connecting the metal wiring to the electrode pad through a second opening located in the resin.

Abstract: A method of manufacturing a semiconductor device includes forming an insulating film on a surface of a semiconductor layer, forming a resist on a surface of the insulating film, the resist having an opening, forming a hardened layer on an inner circumference of the resist by attaching a pattern shrinking agent to the resist, the pattern shrinking agent undergoing a cross-linking reaction with the resist, etching the insulating film using the resist and the hardened layer as masks, removing the hardened layer, and forming a metal layer on a surface of the semiconductor layer, on a surface of the insulating film, and on a surface of the resist. The method further includes removing the resist and the portion of the metal layer on the surface of the resist by lift-off.

Abstract: A semiconductor device includes a first semiconductor layer and a first semiconductor element located in the first semiconductor layer. The semiconductor device also includes a second semiconductor layer of a transparent semiconductor material. The second semiconductor layer is disposed on the first semiconductor layer covering the first semiconductor element. The semiconductor device also includes a second semiconductor element located in the second semiconductor layer. The semiconductor device also includes a wire extending within the second semiconductor layer and electrically connecting the first and second semiconductor elements.

Abstract: A transistor includes a nitride semiconductor layer and a gate electrode layer. The gate electrode layer includes a tantalum nitride layer on the nitride semiconductor layer. The tantalum nitride layer forms a Schottky junction with the nitride semiconductor layer. The transistor also includes an insulating film on the nitride semiconductor layer. The insulating film surrounds the gate electrode layer. A first portion of the gate electrode layer, in contact with the nitride semiconductor layer, has a higher nitrogen mole fraction than a second portion of the gate electrode layer.

Abstract: A semiconductor device includes a first semiconductor layer and a first semiconductor element located in the first semiconductor layer. The semiconductor device also includes a second semiconductor layer of a transparent semiconductor material. The second semiconductor layer is disposed on the first semiconductor layer covering the first semiconductor element. The semiconductor device also includes a second semiconductor element located in the second semiconductor layer. The semiconductor device also includes a wire extending within the second semiconductor layer and electrically connecting the first and second semiconductor elements.