Abstract: This alignment device aligns a stage 10 and a wafer 50 by comparing alignment images captured by respective two chips of the wafer 50 on the stage 10. The alignment device comprises: the stage 10 that holds the wafer 50; an alignment illumination light source 60 that irradiates the wafer 50 held on the stage 10 with light; an alignment image processing unit 67 that receives light from the wafer 50 and acquires the alignment images; an information input/output unit 4 that inputs and outputs information; and an alignment processing unit 3 that processes information from the image processing unit 67 for alignment and the information input/output unit 4.

Abstract: [Object] To provide technologies such as an orientation device capable of increasing strength of a magnetic field in a transport path. [Solving Means] An orientation device according to the present technology includes a transport path, a permanent magnet portion, and a yoke portion. The transport path allows a base on which a magnetic coating film containing magnetic powder has been formed to pass through the transport path along a transport direction. The permanent magnet portion includes a plurality of first permanent magnets, and a plurality of second permanent magnets that is opposed to the plurality of first permanent magnets across the transport path in a vertical direction that is vertical to the transport direction in a manner that opposite poles face each other, the permanent magnet portion vertically orienting particles of the magnetic powder by applying a magnetic field to the magnetic coating film on the base that passes through the transport path.

Abstract: A method of producing paint includes: measuring an impedance of paint containing a magnetic powder; and controlling stirring of the paint on the basis of the measured impedance.

Abstract: [Object] To provide technologies such as an orientation device capable of increasing strength of a magnetic field in a transport path. [Solving Means] An orientation device according to the present technology includes a transport path, a permanent magnet portion, and a yoke portion. The transport path allows a base on which a magnetic coating film containing magnetic powder has been formed to pass through the transport path along a transport direction. The permanent magnet portion includes a plurality of first permanent magnets, and a plurality of second permanent magnets that is opposed to the plurality of first permanent magnets across the transport path in a vertical direction that is vertical to the transport direction in a manner that opposite poles face each other, the permanent magnet portion vertically orienting particles of the magnetic powder by applying a magnetic field to the magnetic coating film on the base that passes through the transport path.

Abstract: In an defect inspection method and device, in order to detect a minute defect present on a surface of a sample with a high degree of sensitivity, a defect inspection method includes imaging the same region of a sample in a plurality of image acquisition conditions and acquiring a plurality of images, processing the plurality of acquired images and extracting a defect candidate, clipping a partial image including the extracted defect candidate and a neighboring image of the defect candidate from the acquired images based on position information of the extracted defect candidate, obtaining feature quantities of the defect candidates in the plurality of clipped partial images, associating the defect candidates that have the same coordinates on the sample and are detected in different image acquisition condition, extracting a defect from among the associated defect candidates in a multi-dimensional feature quantity space, and outputting information of the extracted defect.

Abstract: In a defect inspecting apparatus, the strength of a fatal defect signal decreases due to miniaturization. Thus, in order to assure a high SN ratio, it is necessary to reduce noises caused by scattered light from a wafer. Roughness of a pattern edge and surface roughness which serve as a scattered-light source are spread over the entire wafer. The present invention has discovered the fact that reduction of an illuminated area is a technique effective for decreasing noises. That is to say, the present invention has discovered the fact that creation of an illuminated area having a spot shape and reduction of the dimension of a spot beam are effective. A plurality of temporally and spatially divided spot beams are radiated to the wafer serving as a sample.

Abstract: To improve sensitivity of a defect inspection, it is required to decrease influence of excessive diffraction from a spatial filter. Further, it is preferable to secure signal intensity from defects and particles as much as possible, while the influence of the excessive diffraction is decreased as much as possible. The present invention is characterized in setting a width of a spatial filter surface such that an unnecessary image caused by diffraction, that is, an intensity of the excessive diffraction is sufficiently small with respect to an intensity of a desired image. In the present invention, an SN ratio that is an index for deciding a width of the spatial filter is calculated from a region subjected to the influence of the excessive diffraction in an inspection image, and a width of a shield unit of the spatial filter is set so as to maximize the SN ratio.

Abstract: In an defect inspection method and device, in order to detect a minute defect present on a surface of a sample with a high degree of sensitivity, a defect inspection method includes imaging the same region of a sample in a plurality of image acquisition conditions and acquiring a plurality of images, processing the plurality of acquired images and extracting a defect candidate, clipping a partial image including the extracted defect candidate and a neighboring image of the defect candidate from the acquired images based on position information of the extracted defect candidate, obtaining feature quantities of the defect candidates in the plurality of clipped partial images, associating the defect candidates that have the same coordinates on the sample and are detected in different image acquisition condition, extracting a defect from among the associated defect candidates in a multi-dimensional feature quantity space, and outputting information of the extracted defect.

Abstract: Provided is a pattern defect inspecting apparatus wherein inspection performance is stabilized. The defect inspecting apparatus, which has a plurality of configuration units and inspects defects on the surface of a sample, is provided with a means for monitoring time-dependent changes and failures of some of or all of the configuration units, and a means for notifying the user of the results of the monitoring. Furthermore, a unit which can perform correction is provided with a correcting means, and also a means for replacing a failure component with a spare component which has been prepared in the device.

Abstract: To improve sensitivity of a defect inspection, it is required to decrease influence of excessive diffraction from a spatial filter. Further, it is preferable to secure signal intensity from defects and particles as much as possible, while the influence of the excessive diffraction is decreased as much as possible. The present invention is characterized in setting a width of a spatial filter surface such that an unnecessary image caused by diffraction, that is, an intensity of the excessive diffraction is sufficiently small with respect to an intensity of a desired image. In the present invention, an SN ratio that is an index for deciding a width of the spatial filter is calculated from a region subjected to the influence of the excessive diffraction in an inspection image, and a width of a shield unit of the spatial filter is set so as to maximize the SN ratio.

Abstract: A method of inspecting defects of a sample on a movable table includes a first step for, on a basis of position information of the defects which is previously detected by an other inspection system, driving the table so that the defects come into a viewing field of an optical microscope having a focus which is adjusted, a second step for re-detecting the defects to obtain a first detection result, a third step for correcting the position information of defects on a basis of position information of the re-detected defects, and a fourth step for reviewing the defects whose position information is corrected to obtain a second detection result. At the second step, re-detecting is performed using reflection light or scattered light from the sample which passes an optical filter which includes a light shielding portion and a light transmitting portion.

Abstract: This invention implements reduction in the amount of background-scattered light from a semiconductor wafer surface and highly sensitive inspection, without increasing the number of detectors. A surface inspection apparatus that detects defects on the surface of an object (semiconductor wafer surface) to be inspected, by irradiating the surface of the object with a beam of light such as laser light and detecting the light reflected or scattered from the surface; wherein a widely apertured lens with an optical Fourier transform function is disposed between the object to be inspected and a detector, a filter variable in position as well in aperture diameter is provided on a Fourier transform plane, and background-scattered light from the semiconductor wafer surface is effectively blocked, whereby only a signal from a defect such as a foreign substance is detected.

Abstract: The pattern inspection apparatus of the present invention performs comparison between images of regions corresponding to patterns formed to be same patterns, thereby determining mismatch portions across the images to be defects. The apparatus includes multiple sensors that synchronously acquire images of shiftable multiple detection systems different from one another, and an image comparator section corresponding thereto. In addition, the apparatus includes a means for detecting a statistical offset value from the feature amount to be a defect, thereby properly detecting the defect even when a brightness difference is occurring in association with film a thickness difference in a wafer.

Abstract: The invention provides a defect inspection method and a defect inspection device which enable a defect to be inspected regardless of optical conditions. The invention comprises the steps of setting a target local region and a plurality of corresponding local regions in the image signals, the target local region including a target pixel and an area surrounding the target pixel, the corresponding local regions including pixels corresponding to the target pixel and areas surrounding the corresponding pixels; searching similarities between the image signal of the target local region and the image signals of the plurality of corresponding local regions; determining a plurality of image signals that represent corresponding local regions and are similar to the image signal of the target local region; and comparing the image signal of the target local region with the image signals that represent the corresponding local regions.

Abstract: An aspect of the invention provides a defect inspection apparatus being able to accurately inspect a micro foreign matter or defect at a high speed for an inspection target substrate in which a repetitive pattern and a non-repetitive pattern are mixed. In a foreign matter anti-adhesive means 180, a transparent plate 187 is placed on a placement table 34 through a frame 185. In the foreign matter anti-adhesive means 180, a shaft 181 which is rotatably supported by two columnar supports 184 fixed onto a base 186 is coupled to a motor 182 by a coupling 183. The shaft 181 is inserted into a part of a frame 185 between the two columnar supports 184 such that the frame 185 and the transparent plate 187 are turnable about the shaft 181. Therefore, the whole of the frame 185 is opened and closed in a Z-direction about the shaft 181, and a wafer 1 on the placement table 34 can be covered with the frame 185 and the transparent plate 187.

Abstract: The pattern inspection apparatus of the present invention performs comparison between images of regions corresponding to patterns formed to be same patterns, thereby determining mismatch portions across the images to be defects. The apparatus includes multiple sensors that synchronously acquire images of shiftable multiple detection systems different from one another, and an image comparator section corresponding thereto. In addition, the apparatus includes a means for detecting a statistical offset value from the feature amount to be a defect, thereby properly detecting the defect even when a brightness difference is occurring in association with film a thickness difference in a wafer.

Abstract: An aspect of the invention provides a defect inspection apparatus being able to accurately inspect a micro foreign matter or defect at a high speed for an inspection target substrate in which a repetitive pattern and a non-repetitive pattern are mixed. In a foreign matter anti-adhesive means 180, a transparent plate 187 is placed on a placement table 34 through a frame 185. In the foreign matter anti-adhesive means 180, a shaft 181 which is rotatably supported by two columnar supports 184 fixed onto a base 186 is coupled to a motor 182 by a coupling 183. The shaft 181 is inserted into a part of a frame 185 between the two columnar supports 184 such that the frame 185 and the transparent plate 187 are turnable about the shaft 181. Therefore, the whole of the frame 185 is opened and closed in a Z-direction about the shaft 181, and a wafer 1 on the placement table 34 can be covered with the frame 185 and the transparent plate 187.

Abstract: This invention implements reduction in the amount of background-scattered light from a semiconductor wafer surface and highly sensitive inspection, without increasing the number of detectors. A surface inspection apparatus that detects defects on the surface of an object (semiconductor wafer surface) to be inspected, by irradiating the surface of the object with a beam of light such as laser light and detecting the light reflected or scattered from the surface; wherein a widely apertured lens with an optical Fourier transform function is disposed between the object to be inspected and a detector, a filter variable in position as well in aperture diameter is provided on a Fourier transform plane, and background-scattered light from the semiconductor wafer surface is effectively blocked, whereby only a signal from a defect such as a foreign substance is detected.

Abstract: An electron beam apparatus equipped with a review function of a semiconductor wafer includes a scanning electron microscope to obtain image information of a semiconductor wafer, and an information processing apparatus to process the image information. The information processing apparatus includes a data input unit to receive positional information of a defect on the wafer, a storage for storing a plurality of image information of a position on the wafer corresponding to the positional information, and an image processing unit that retrieves any of the plurality of image information, and classifies the retrieved image information corresponding to the positional information depending on the type of defect.

Abstract: A method and apparatus of inspecting a sample, in which the sample is inspected under a plurality of inspection conditions, and inspection data obtained by inspecting the sample under each of the plurality of inspection conditions and position information on the sample of the inspection date in correspondence with the respective inspection conditions, are stored. The inspection data for each of the plurality of inspection conditions is against each other by the use of the position information on the sample to determine a position to be inspected in detail, and an image of the sample at a position to be inspected in detail is obtained. The obtained image is classified, the inspection condition of the sample by the use of information of classification of the image is determined.