Abstract: A delay circuit contains a first inversion circuit including a pull-up circuit and a pull-down circuit, and a second inversion circuit including a pull-up circuit and a pull-down circuit. The delay circuit further contains a first pass transistor connected in series to the pull-up circuit in the first inversion circuit between a power supply potential and an output node, a second pass transistor connected in series to the pull-down circuit in the first inversion circuit between a ground potential and the output node, a third pass transistor connected in series between the input node and the pull-up circuit in the second inversion circuit, and a fourth pass transistor connected in series between the input node and the pull-down circuit in the second inversion circuit. A delay characteristic of the delay circuit is changed by a combination of control signals applied to gates of the pass transistors.

Abstract: A delay circuit contains a first inversion circuit including a pull-up circuit and a pull-down circuit, and a second inversion circuit including a pull-up circuit and a pull-down circuit. The delay circuit further contains a first pass transistor connected in series to the pull-up circuit in the first inversion circuit between a power supply potential and an output node, a second pass transistor connected in series to the pull-down circuit in the first inversion circuit between a ground potential and the output node, a third pass transistor connected in series between the input node and the pull-up circuit in the second inversion circuit, and a fourth pass transistor connected in series between the input node and the pull-down circuit in the second inversion circuit. A delay characteristic of the delay circuit is changed by a combination of control signals applied to gates of the pass transistors.

Abstract: An inductor (1) includes an inductor (L11P) formed into the shape of a spiral on the outer circumference of an inductor region and having a start point connected to a terminal (N11P), an inductor (L12P) formed into the shape of a spiral on the inner circumference of the inductor region and having a start point at the end point of the inductor (L11P) and an end point connected to a terminal (N12P), and an inductor (L13P) formed into the shape of a spiral in a region sandwiched between the inductor (L11P) and the inductor (L12P) and having a start point at a node between the inductor (L11P) and the inductor (L12P) and an end point connected to a terminal (N13P).

Abstract: An inductor (1) includes an inductor (L11P) formed into the shape of a spiral on the outer circumference of an inductor region and having a start point connected to a terminal (N11P), an inductor (L12P) formed into the shape of a spiral on the inner circumference of the inductor region and having a start point at the end point of the inductor (L11P) and an end point connected to a terminal (N12P), and an inductor (L13P) formed into the shape of a spiral in a region sandwiched between the inductor (L11P) and the inductor (L12P) and having a start point at a node between the inductor (L11P) and the inductor (L12P) and an end point connected to a terminal (N13P).

Abstract: A flip-flop circuit (FF 10) of the present invention includes master latch circuits (LAT 11 and LAT 12), slave latch circuits (LAT 13 and LAT 14), C-element circuits (CE 11, CE 12, CE 13, and CE 14), and inverter circuits (INV 11, INV 12, INV 13, and INV 14). The inverter circuits (INV 11 and INV 12) are interconnected to each other between the C-element circuit (CE 11) and the C-element circuit (CE 12). The inverter circuits (INV 13 and INV 14) are interconnected to each other between the C-element circuit (CE 13) and the C-element circuit (CE 14).

Abstract: A flip-flop circuit (FF 10) of the present invention includes master latch circuits (LAT 11 and LAT 12), slave latch circuits (LAT 13 and LAT 14), C-element circuits (CE 11, CE 12, CE 13, and CE 14), and inverter circuits (INV 11, INV 12, INV 13, and INV 14). The inverter circuits (INV 11 and INV 12) are interconnected to each other between the C-element circuit (CE 11) and the C-element circuit (CE 12). The inverter circuits (INV 13 and INV 14) are interconnected to each other between the C-element circuit (CE 13) and the C-element circuit (CE 14).

Abstract: A CMOS model generating apparatus 1 according to the present invention generates a CMOS model by converting an In-Ip space into an xn-xp space such that a typical condition TT and corner conditions FF, SS in the In-Ip space become (0, 0), (?, ?) and (??, ??) in the xn-xp space, determining an ellipse fitting to the respective mappings of the corner conditions FF, SS, FS and SF with the mapping (0, 0) of the typical condition TT as a center, expressing two independent principal components in the form of a Gaussian distribution using the major and minor axes of this ellipse as axes of the principal components, and obtaining a probability distribution determining deviations of the Gaussian distribution such that the cumulative probability within this ellipse becomes equal to the one presumed by the corner conditions FF, SS, FS and SF.

Abstract: A CMOS model generating apparatus 1 according to the present invention generates a CMOS model by converting an In-Ip space into an xn-xp space such that a typical condition TT and corner conditions FF, SS in the In-Ip space become (0, 0), (?, ?) and (??, ??) in the xn-xp space, determining an ellipse fitting to the respective mappings of the corner conditions FF, SS, FS and SF with the mapping (0, 0) of the typical condition TT as a center, expressing two independent principal components in the form of a Gaussian distribution using the major and minor axes of this ellipse as axes of the principal components, and obtaining a probability distribution determining deviations of the Gaussian distribution such that the cumulative probability within this ellipse becomes equal to the one presumed by the corner conditions FF, SS, FS and SF.