Patents by Inventor Hidetoshi Sukenori

Hidetoshi Sukenori has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Publication number: 20020000555
    Abstract: A conductive film made of Al or alloy containing Al as a main component is formed on an underlying substrate. An upper conductive film is disposed on the conductive film. A first opening is formed through the upper conductive film. An insulating film is disposed on the upper conductive film. A second opening is formed through the insulating film. An inner wall of the second opening is retreated from an inner wall of the first opening. An ITO film is formed covering a partial upper surface of the insulating film and inner surfaces of the first and second openings, and contacting a partial upper surface of the upper conductive film at a region inside of the second opening. Good electrical contact between an Al or Al alloy film and an ITO film can be established and productivity can be improved.
    Type: Application
    Filed: August 9, 2001
    Publication date: January 3, 2002
    Applicant: Fujitsu Limited
    Inventors: Tetsuya Fujikawa, Hidetoshi Sukenori, Shougo Hayashi, Yoshinori Tanaka, Masahiro Kihara
  • Patent number: 6297519
    Abstract: A conductive film made of Al or alloy containing Al as a main component is formed on an underlying substrate. An upper conductive film is disposed on the conductive film. A first opening is formed through the upper conductive film. An insulating film is disposed on the upper conductive film. A second opening is formed through the insulating film. An inner wall of the second opening is retreated from an inner wall of the first opening. An ITO film is formed covering a partial upper surface of the insulating film and inner surfaces of the first and second openings, and contacting a partial upper surface of the upper conductive film at a region inside of the second opening. Good electrical contact between an Al or Al alloy film and an ITO film can be established and productivity can be improved.
    Type: Grant
    Filed: April 23, 1999
    Date of Patent: October 2, 2001
    Assignee: Fujitsu Limited
    Inventors: Tetsuya Fujikawa, Hidetoshi Sukenori, Shougo Hayashi, Yoshinori Tanaka, Masahiro Kihara
  • Patent number: 5943106
    Abstract: A plurality of control and data bus lines are formed on the surface of an insulating substrate. A pixel electrode and a switching element are formed at an area corresponding to each interconnection portion between the control and data bus lines. A plurality of capacitor bus lines are formed on the surface of the interlayer insulating substrate for forming an auxiliary capacitor between the pixel electrode and capacitor bus line. The capacitor bus line has an auxiliary capacitor pattern branching from the capacitor bus line and extending along the data bus line. This auxiliary capacitor pattern is constituted of a cutting portion and a remaining main portion. A space between the cutting portion and a corresponding data bus line is broader than that between the main portion and the corresponding data bus line.
    Type: Grant
    Filed: July 29, 1997
    Date of Patent: August 24, 1999
    Assignee: Fujitsu Limited
    Inventors: Hidetoshi Sukenori, Kouji Tsukao, Kenichi Nagaoka