Abstract: An exposure device can exposes a circuit pattern while information data is suitably changed. An exposure device comprises a first light source (20) for irradiating a first light including ultraviolet rays, a projection exposure unit (70) for exposing a circuit pattern drawn on a photomask on a substrate, with the first light, a substrate stage (60) for mounting the substrate, a housing (11) for arranging the substrate stage, a second light source (41) for irradiating a second light including ultraviolet rays, arranged at a position different from the first light source, a spatial light modulation unit (40) for exposing information data formed electrically using the second light on the substrate, and a spatial optical light modulation unit driving means (5) for moving the spatial light modulation unit arranged on the housing (11) in a direction parallel to a moving direction of the substrate stage.

Abstract: An exposure device can exposes a circuit pattern while information data is suitably changed. An exposure device comprises a first light source (20) for irradiating a first light including ultraviolet rays, a projection exposure unit (70) for exposing a circuit pattern drawn on a photomask on a substrate, with the first light, a substrate stage (60) for mounting the substrate, a housing (11) for arranging the substrate stage, a second light source (41) for irradiating a second light including ultraviolet rays, arranged at a position different from the first light source, a spatial light modulation unit (40) for exposing information data formed electrically using the second light on the substrate, and a spatial optical light modulation unit driving means (5) for moving the spatial light modulation unit arranged on the housing (11) in a direction parallel to a moving direction of the substrate stage.

Abstract: An improved method of measuring film thickness of the film layer on a certain material is disclosed. The method is carried out by way of the steps of measuring reflection intensity spectrum, determining extreme values of wavelength relative to the spectrum, preparing an expected value table relative to the reflection interference orders associated with the extreme values of wavelength, calculating a group of expected values of film thickness with reference to the expected value table, calculating deviated values among the values of film thickness in association with the group of expected values, determining the expected orders which minimize absolute values corresponding to deviated values as true interference orders and determining a required film thickness with reference to the thus determined interference orders.