Abstract: An X-ray image acquisition device includes a pixel unit having M pixel arrays each including N pixel portions (N and M are integers of 2 or more), M circuit units, and a control unit. Each circuit unit includes T (T is an integer of N or more) adding sections that sequentially add electrical signals corresponding to output signals from the N pixel portions and a switch section for switching connection states between the N pixel portions and the T adding sections. The control unit switches the connection states in synchronization with the transportation of an object along a first direction so that the electrical signals corresponding to the output signals output from the pixel portions by detecting X-rays transmitted through the same region of the object are added by the same adding sections.

Abstract: A clock transmission circuit includes a plurality of circuit regions that have common circuit patterns and are arranged along one direction. Each of the circuit patterns of the plurality of circuit regions has at least two circuit elements that are switchable between a high impedance state and a pass state, and wirings that are connected to the circuit patterns of circuit regions adjacent to concerned circuit region, among the plurality of circuit regions. States of the at least two circuit elements of the plurality of circuit regions are controlled to be predetermined states determined for each circuit region, so that at least a part of a clock tree crossing the plurality of circuit regions is configured.

Abstract: An X-ray image acquisition device includes a pixel unit having M pixel arrays each including N pixel portions (N and M are integers of 2 or more), M circuit units, and a control unit. Each circuit unit includes T (T is an integer of N or more) adding sections that sequentially add electrical signals corresponding to output signals from the N pixel portions and a switch section for switching connection states between the N pixel portions and the T adding sections. The control unit switches the connection states in synchronization with the transportation of an object along a first direction so that the electrical signals corresponding to the output signals output from the pixel portions by detecting X-rays transmitted through the same region of the object are added by the same adding sections.

Abstract: A clock transmission circuit includes a plurality of circuit regions that have common circuit patterns and are arranged along one direction. Each of the circuit patterns of the plurality of circuit regions has at least two circuit elements that are switchable between a high impedance state and a pass state, and wirings that are connected to the circuit patterns of circuit regions adjacent to concerned circuit region, among the plurality of circuit regions. States of the at least two circuit elements of the plurality of circuit regions are controlled to be predetermined states determined for each circuit region, so that at least a part of a clock tree crossing the plurality of circuit regions is configured.

Abstract: An imaging device includes: a pixel unit having M (M is an integer of 2 or more) pixel arrays each including N (N is an integer of 2 or more) pixel portions; and M circuit units. Each circuit unit includes: N charge amplifiers; N A/D converters each including an addition processing portion for performing addition processing on voltage signals and a holding portion for holding an addition signal corresponding to an addition state of the addition processing portion; and a switch circuit for switching connection states between the charge amplifiers and the holding portions of the A/D converters. The switch circuit switches the connection state so that the holding portion for holding the addition signal corresponding to the charge signal output from the pixel portion is switched in accordance with the arrangement order of the N pixel portions.

Abstract: An X-ray image acquisition device includes a pixel unit having M pixel arrays each including N pixel portions (N and M are integers of 2 or more), M circuit units, and a control unit. Each circuit unit includes T (T is an integer of N or more) adding sections that sequentially add electrical signals corresponding to output signals from the N pixel portions and a switch section for switching connection states between the N pixel portions and the T adding sections. The control unit switches the connection states in synchronization with the transportation of an object along a first direction so that the electrical signals corresponding to the output signals output from the pixel portions by detecting X-rays transmitted through the same region of the object are added by the same adding sections.

Abstract: A solid-state imaging device includes a pixel array unit and a current source array unit. The pixel array unit includes N pixel units arrayed in a first direction. Each pixel unit includes a photodiode and an amplification MOS transistor. The current source array unit includes N current sources. Each current source includes a first MOS transistor, a second MOS transistor, a third MOS transistor, a fourth MOS transistor, and a setting circuit. The setting circuit sets ON/OFF of the third MOS transistor on the basis of a voltage of the signal line, thereby suppressing fluctuations in an amount of current flowing from a Vr supply line to a ground potential supply terminal via a common node and the first MOS transistor.

Abstract: A solid-state imaging device includes a pixel array unit and a current source array unit. The pixel array unit includes N pixel units arrayed in a first direction. Each pixel unit includes a photodiode and an amplification MOS transistor. The current source array unit includes N current sources. Each current source includes a first MOS transistor, a second MOS transistor, a third MOS transistor, a fourth MOS transistor, and a setting circuit. The setting circuit sets ON/OFF of the third MOS transistor on the basis of a voltage of the signal line, thereby suppressing fluctuations in an amount of current flowing from a Vr supply line to a ground potential supply terminal via a common node and the first MOS transistor.

Abstract: Provided is a vinylidene fluoride resin film that has good adhesiveness to a base material, achieves good dispersivity even when a pigment is contained in large amounts, and has excellent thermal stability during a forming process. To a resin component composed of a vinylidene fluoride resin and a methacrylic acid ester resin, a predetermined amount of a titanium oxide surface treated with alumina and silica and a predetermined amount of a fatty acid ester of polyethylene glycol and/or its derivative are added to prepare a vinylidene fluoride resin film. Alternatively, at least a front side layer and a back side layer have such a composition, the front side layer has a combination amount of the vinylidene fluoride resin and the methacrylic acid ester resin of 70:30 to 95:5 in terms of mass ratio, and the back side layer has a combination amount of the vinylidene fluoride resin and the methacrylic acid ester resin of 5:95 to 45:55 in terms of mass ratio.

Abstract: Provided is a vinylidene fluoride resin film that has good adhesiveness to a base material, achieves good dispersivity even when a pigment is contained in large amounts, and has excellent thermal stability during a forming process. To a resin component composed of a vinylidene fluoride resin and a methacrylic acid ester resin, a predetermined amount of a titanium oxide surface treated with alumina and silica and a predetermined amount of a fatty acid ester of polyethylene glycol and/or its derivative are added to prepare a vinylidene fluoride resin film. Alternatively, at least a front side layer and a back side layer have such a composition, the front side layer has a combination amount of the vinylidene fluoride resin and the methacrylic acid ester resin of 70:30 to 95:5 in terms of mass ratio, and the back side layer has a combination amount of the vinylidene fluoride resin and the methacrylic acid ester resin of 5:95 to 45:55 in terms of mass ratio.