Abstract: A solid-state imaging device includes a pixel array unit and a current source array unit. The pixel array unit includes N pixel units arrayed in a first direction. Each pixel unit includes a photodiode and an amplification MOS transistor. The current source array unit includes N current sources. Each current source includes a first MOS transistor, a second MOS transistor, a third MOS transistor, a fourth MOS transistor, and a setting circuit. The setting circuit sets ON/OFF of the third MOS transistor on the basis of a voltage of the signal line, thereby suppressing fluctuations in an amount of current flowing from a Vr supply line to a ground potential supply terminal via a common node and the first MOS transistor.

Abstract: A solid-state imaging device includes a pixel array unit and a current source array unit. The pixel array unit includes N pixel units arrayed in a first direction. Each pixel unit includes a photodiode and an amplification MOS transistor. The current source array unit includes N current sources. Each current source includes a first MOS transistor, a second MOS transistor, a third MOS transistor, a fourth MOS transistor, and a setting circuit. The setting circuit sets ON/OFF of the third MOS transistor on the basis of a voltage of the signal line, thereby suppressing fluctuations in an amount of current flowing from a Vr supply line to a ground potential supply terminal via a common node and the first MOS transistor.

Abstract: Provided is a vinylidene fluoride resin film that has good adhesiveness to a base material, achieves good dispersivity even when a pigment is contained in large amounts, and has excellent thermal stability during a forming process. To a resin component composed of a vinylidene fluoride resin and a methacrylic acid ester resin, a predetermined amount of a titanium oxide surface treated with alumina and silica and a predetermined amount of a fatty acid ester of polyethylene glycol and/or its derivative are added to prepare a vinylidene fluoride resin film. Alternatively, at least a front side layer and a back side layer have such a composition, the front side layer has a combination amount of the vinylidene fluoride resin and the methacrylic acid ester resin of 70:30 to 95:5 in terms of mass ratio, and the back side layer has a combination amount of the vinylidene fluoride resin and the methacrylic acid ester resin of 5:95 to 45:55 in terms of mass ratio.

Abstract: Provided is a vinylidene fluoride resin film that has good adhesiveness to a base material, achieves good dispersivity even when a pigment is contained in large amounts, and has excellent thermal stability during a forming process. To a resin component composed of a vinylidene fluoride resin and a methacrylic acid ester resin, a predetermined amount of a titanium oxide surface treated with alumina and silica and a predetermined amount of a fatty acid ester of polyethylene glycol and/or its derivative are added to prepare a vinylidene fluoride resin film. Alternatively, at least a front side layer and a back side layer have such a composition, the front side layer has a combination amount of the vinylidene fluoride resin and the methacrylic acid ester resin of 70:30 to 95:5 in terms of mass ratio, and the back side layer has a combination amount of the vinylidene fluoride resin and the methacrylic acid ester resin of 5:95 to 45:55 in terms of mass ratio.