Abstract: Disclosed is a cleaning liquid for lithography which is characterized by containing a mixed organic solvent which is obtained by mixing (A) at least one solvent selected from ketone organic solvents and glycol ether organic solvents, (B) at least one solvent selected from lactone organic solvents and (C) at least one solvent selected from alkoxy benzenes and aromatic alcohols. This cleaning liquid is highly safe and does not have adverse effects on the environment or the human body, while having basic characteristics necessary for a cleaning liquid for lithography. In addition, this cleaning liquid can be stably supplied at low cost.

Abstract: Disclosed is a cleaning liquid for lithography which is characterized by containing a mixed organic solvent which is obtained by mixing (A) at least one solvent selected from ketone organic solvents and glycol ether organic solvents, (B) at least one solvent selected from lactone organic solvents and (C) at least one solvent selected from alkoxy benzenes and aromatic alcohols. This cleaning liquid is highly safe and does not have adverse effects on the environment or the human body, while having basic characteristics necessary for a cleaning liquid for lithography. In addition, this cleaning liquid can be stably supplied at low cost.

Abstract: A composition for forming a coating in accordance with the present invention includes a siloxane polymer obtained by hydrolyzing and condensing a silane compound containing an alkoxysilane compound represented by general formula (1) below R1nSi(OR2)4-n ??(1) (where R1 represents an organic group having 1 to 20 carbon atoms, R2 represents an alkyl group having 1 to 4 carbon atoms, and n represents either 1 or 2). A molar fraction of the alkoxysilane compound, represented by general formula (1), in the silane compound is 0.5 or above. The foregoing realizes a composition for forming a coating, which composition allows formation of a silica base coating that is lowered in dielectric constant and improved in mechanical strength and electric properties.

Abstract: It is disclosed a dielectric element comprising a lower electrode, a dielectric layer, and an upper electrode which are provided on a substrate, in which at least one of the electrodes is a Pt layer, a Ru layer is used as a base layer for the Pt layer. In the fabrication of the dielectric element, the Pt layer is formed by electroplating, a photoresist pattern is used as a plating mask, and an Ru layer is formed as a seed layer. The present invention makes it possible to provide a dielectric element using Pt as an electrode material, that is capable of easily forming a Pt electrode having excellent electrical characteristics without generating voids or seams, that is capable of forming a fine pattern, and that does not occur contamination in a processing chamber, and a method for fabricating a dielectric element of having the characteristics mentioned above.

Abstract: It is disclosed a dielectric element comprising a lower electrode, a dielectric layer, and an upper electrode which are provided on a substrate, in which at least one of the electrodes is a Pt layer, a Ru layer is used as a base layer for the Pt layer. In the fabrication of the dielectric element, the Pt layer is formed by electroplating, a photoresist pattern is used as a plating mask, and an Ru layer is formed as a seed layer. The present invention makes it possible to provide a dielectric element using Pt as an electrode material, that is capable of easily forming a Pt electrode having excellent electrical characteristics without generating voids or seams, that is capable of forming a fine pattern, and that does not occur contamination in a processing chamber, and a method for fabricating a dielectric element of having the characteristics mentioned above.

Abstract: It is disclosed a dielectric element comprising a lower electrode, a dielectric layer, and an upper electrode which are provided on a substrate, in which at least one of the electrodes is a Pt layer, a Ru layer is used as a base layer for the Pt layer. In the fabrication of the dielectric element, the Pt layer is formed by electroplating, a photoresist pattern is used as a plating mask, and an Ru layer is formed as a seed layer. The present invention makes it possible to provide a dielectric element using Pt as an electrode material, that is capable of easily forming a Pt electrode having excellent electrical characteristics without generating voids or seams, that is capable of forming a fine pattern, and that does not occur contamination in a processing chamber, and a method for fabricating a dielectric element of having the characteristics mentioned above.

Abstract: According to the invention disclosed, application liquid such as spin-on-glass (SOG) is dropped on the surface of a substrate such as a semiconductor wafer having irregularities thereon and is dispersed on the substrate surface using a centrifugal force generated by rotating the substrate. The rotation of the substrate is performed in a first rotational action at a low speed and a second rotational action at a high speed, the first and second rotational actions being separated by a time interval. The second rotation may be at a constant speed. Alternatively, the rotational speed of the second rotational action may comprise rotation at an intermediate speed continuously followed by rotation at a higher speed. The time interval between the first and second rotational actions is ten times the duration of the first rotational action or longer. The duration of the second rotational action is three times that of the first rotational action or longer.

Abstract: A substrate onto which a coating solution is dropped is rotated at a low speed in a first rotational mode and then after an interval of time at a high speed in a second rotational mode. At the end of the first rotational mode, the coating solution is coated to a thickness larger than a given thickness on irregularities on the substrate such as twin patterns and a global pattern, with the coating solution being coated to a thickness smaller than the given thickness between the twin patterns. Subsequently, at the start of the second rotational mode, the coating solution coated on the twin patterns and the global pattern flows into spaces between these patterns. At the end of the second rotational mode, the thickness of the coating solution on the twin patterns is almost nil, and the thickness of the coating solution on the global pattern is small in its entirety though it is somewhat large in the central area of the global pattern.

Abstract: Proposed is an improved method for the formation of a silica-based coating film on the surface of a substrate such as a silicon wafer in the manufacture of semiconductor devices by coating the substrate surface with a polysilazane-containing coating solution followed by conversion of the coating layer of polysilazane into a silica-based coating film. The method comprises drying the coating layer of the polysilazane according to a heating schedule at a specified heating rate with continuous or stepwise increase of the temperature up to 240.degree. to 350.degree. C. followed by an irradiation treatment with far ultraviolet light at a temperature of 240.degree. to 350.degree. C. and then by a baking treatment at 350.degree. to 800.degree. C.

Abstract: The invention disclosed defined a vertically extending passage through the rotary center of an inner cup or the rotary center of a spinner in a notary chemical treater, disposes a stationary cleaning fluid nozzle in the passage, and injects the cleaning fluid from the nozzle to clean a lid of the rotary chemical treater and the underside of an object treatment within the treater. The underside of the lid and the underside of the objective part are efficiently cleaned, and the need for sealing the movable parts against the cleaning fluid is eliminated because the nozzle is stationary, ensuring the prevention of the cleaning fluid from leaking.

Abstract: A solution applying apparatus has inner and outer cups each having an upper opening, the inner cup being rotatably disposed in the outer cup. The inner cup houses a planar workpiece such as a glass substrate therein which is to be coated with a coating solution such as a resist solution. The solution applying apparatus also has a lid assembly having an outer cup lid for closing the upper opening of the outer cup and an inner cup lid for closing the upper opening of the inner cup, the inner cup lid being rotatable with respect to the outer cup lid. The inner cup has drain holes defined in an outer circumferential portion thereof for providing communication between a space within the inner cup and a space outside of the inner cup to drain an excessive coating solution from the inner cup. The outer cup has an annular collection passage defined therein along the outer circumferential portion of the inner cup, the drain holes opening into the annular collection passage.