Abstract: The invention provides a process for producing a crystalline thin film, characterized by including the steps of: (A) preparing a thin film having a specific region arranged at a predetermined position, the specific region continuing to a surrounding non-specific region and being different in melting or resolidification property from the surrounding non-specific region; (B) locally melting and resolidifying a partial area including the specific region in the thin film; and (C) locally melting and resolidifying another partial area including a non-specific region sharing a common boundary with an area crystallized by resolidification in a preceding step. The spatial position of the specific region can be accurately determined. The obtained crystalline thin film has crystal grains formed at predetermined positions, and therefore the fluctuation of formed elements are reduced.