Patents by Inventor Hideya Matsumoto

Hideya Matsumoto has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 11230756
    Abstract: Provided is a ferritic stainless steel that has good corrosion resistance and which exhibits good brazeability when subjected to high-temperature brazing with a Ni-containing brazing filler metal. The ferritic stainless steel has a composition containing, in mass %, C: 0.003 to 0.020%, Si: 0.05 to 0.60%, Mn: 0.05 to 0.50%, P: 0.04% or less, S: 0.02% or less, Cr: 17.0 to 24.0%, Ni: 0.20 to 0.80%, Cu: 0.01 to 0.80%, Mo: 0.01 to 2.50%, Al: 0.001 to 0.015%, Nb: 0.25 to 0.60%, and N: 0.020% or less, with the balance being Fe and incidental impurities, the composition satisfying formula (1) below and formula (2) below, Cu+Mo?0.30??(1) 4Ni?(Si+Mn)?0??(2) (wherein Cu and Mo in formula (1) and Ni, Si, and Mn in formula (2) each represent the content (mass %) of the corresponding element).
    Type: Grant
    Filed: August 25, 2017
    Date of Patent: January 25, 2022
    Assignee: JFE Steel Corporation
    Inventors: Takayoshi Yano, Kunio Fukuda, Shin Ishikawa, Katsuhisa Yamauchi, Reiko Sugihara, Hideya Matsumoto
  • Publication number: 20210102279
    Abstract: A ferritic stainless steel having good corrosion resistance and good brazability in the case where brazing is performed with a Ni-containing brazing filler metal at a high temperature. The ferritic stainless steel has a chemical composition comprising, by mass %, C: 0.003% to 0.020%, Si: 0.05% to 0.60%, Mn: 0.05% to 0.30%, P: 0.040% or less, S: 0.020% or less, Cr: 17.0% to 22.0%, Ni: 0.20% to 0.80%, Cu: 0.30% to 0.80%, Mo: 0.01% to 0.10%, Al: 0.001% to 0.015%, Nb: 0.25% to 0.60%, N: 0.020% or less, and the balance being Fe and inevitable impurities. The expression 4Ni?(Si+Mn)?0.00% is satisfied, where each of Ni, Si, and Mn denotes a content, by mass %, of a corresponding element.
    Type: Application
    Filed: January 21, 2019
    Publication date: April 8, 2021
    Applicant: JFE STEEL CORPORATION
    Inventors: Takayoshi YANO, Manami ICHIKAWA, Tetsuyuki NAKAMURA, Kunio FUKUDA, Shin ISHIKAWA, Reiko SUGIHARA, Katsuhisa YAMAUCHI, Hideya MATSUMOTO
  • Publication number: 20190177825
    Abstract: Provided is a ferritic stainless steel that has good corrosion resistance and which exhibits good brazeability when subjected to high-temperature brazing with a Ni-containing brazing filler metal. The ferritic stainless steel has a composition containing, in mass %, C: 0.003 to 0.020%, Si: 0.05 to 0.60%, Mn: 0.05 to 0.50%, P: 0.04% or less, S: 0.02% or less, Cr: 17.0 to 24.0%, Ni: 0.20 to 0.80%, Cu: 0.01 to 0.80%, Mo: 0.01 to 2.50%, Al: 0.001 to 0.015%, Nb: 0.25 to 0.60%, and N: 0.020% or less, with the balance being Fe and incidental impurities, the composition satisfying formula (1) below and formula (2) below, Cu+Mo?0.30??(1) 4Ni?(Si+Mn)?0??(2) (wherein Cu and Mo in formula (1) and Ni, Si, and Mn in formula (2) each represent the content (mass %) of the corresponding element).
    Type: Application
    Filed: August 25, 2017
    Publication date: June 13, 2019
    Applicant: JFE Steel Corporation
    Inventors: Takayoshi Yano, Kunio Fukuda, Shin Ishikawa, Katsuhisa Yamauchi, Reiko Sugihara, Hideya Matsumoto
  • Patent number: 6124210
    Abstract: The present invention relates to a method of cleaning a surface of a substrate employed prior to film formation by using the CVD method which uses a reaction gas containing an ozone containing gas which contains ozone (O.sub.3) in oxygen (O.sub.2) and tetraethylorthosilicate (TEOS). The substrate surface cleaning method comprises the steps of oxidizing particles 13 by contacting a pre-process gas containing ozone 15 to a surface 12 of a substrate 11 on which the particles 13 are present, and removing the particles 13 by heating the substrate 11 to exceed a decomposition point of oxide 13a of the particles 13.
    Type: Grant
    Filed: May 24, 1999
    Date of Patent: September 26, 2000
    Assignees: Canon Sales Co., Inc., Semiconductor Process Laboratory Co., Ltd.
    Inventors: Hiroshi Chino, Setsu Suzuki, Hideya Matsumoto, Shoji Ohgawara