Patents by Inventor Hideya Yamadera
Hideya Yamadera has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
-
Publication number: 20220238703Abstract: A semiconductor device includes a nitride semiconductor layer, a source electrode, a drain electrode, and an insulating gate portion. The nitride semiconductor layer has an element part and a peripheral withstand voltage part. The source electrode is disposed adjacent to a first main surface of the nitride semiconductor layer. The drain electrode is disposed adjacent to a second main surface of the nitride semiconductor layer. The nitride semiconductor layer is formed with a first groove on the first main surface in the element part, and a second groove on the first main surface in the peripheral withstand voltage part. A JFET region is embedded in the first groove in the element part. An inclination angle of a side surface of the first groove adjacent to a channel portion of a body region is smaller than an inclination angle of a side surface of the second groove.Type: ApplicationFiled: April 18, 2022Publication date: July 28, 2022Inventors: Hirofumi KIDA, Hidemoto TOMITA, Tomohiko MORI, Hideya YAMADERA
-
Patent number: 11107691Abstract: A method of manufacturing a semiconductor device is provided, and the method may include: preparing a semiconductor substrate constituted of a group III nitride semiconductor, a main surface of the semiconductor substrate being a c-plane; forming a grove on the main surface by dry dry-etching the main surface; and wet-etching an inner surface of the groove using an etchant to expose the c-plane of the semiconductor substrate in a wet-etched region, the etching having an etching rate to the c-plane of the semiconductor substrate that is lower than the etching rate to a plane other than the c-plane of the semiconductor substrate.Type: GrantFiled: April 29, 2020Date of Patent: August 31, 2021Assignee: DENSO CORPORATIONInventors: Toru Ikeda, Tomohiko Mori, Narumasa Soejima, Hideya Yamadera
-
Publication number: 20200365409Abstract: A method of manufacturing a semiconductor device is provided, and the method may include: preparing a semiconductor substrate constituted of a group III nitride semiconductor, a main surface of the semiconductor substrate being a c-plane; forming a grove on the main surface by dry dry-etching the main surface; and wet-etching an inner surface of the groove using an etchant to expose the c-plane of the semiconductor substrate in a wet-etched region, the etching having an etching rate to the c-plane of the semiconductor substrate that is lower than the etching rate to a plane other than the c-plane of the semiconductor substrate.Type: ApplicationFiled: April 29, 2020Publication date: November 19, 2020Applicant: TOYOTA JIDOSHA KABUSHIKI KAISHAInventors: Toru IKEDA, Tomohiko Mori, Narumasa Soejima, Hideya Yamadera
-
Publication number: 20150325709Abstract: A semiconductor device is provided with a semiconductor layer including Si and a Schottky electrode being in Schottky contact with at least a part of one of main surfaces of the semiconductor layer. A material of the Schottky electrode is a Al—Si alloy including at least one metal selected from the group consisting of Ti, Ta, Nb, Hf, Zr, W, Mo and V.Type: ApplicationFiled: March 13, 2015Publication date: November 12, 2015Inventors: Takahiro ITO, Toru ONISHI, Hideya YAMADERA, Satoru MACHIDA, Yusuke YAMASHITA
-
Publication number: 20140220365Abstract: A laminated electrode disposed on a substrate includes a first layer disposed at a top surface and a second layer directly joined to the first layer. A material of the first layer is gold. A material of the second layer is nickel silicide.Type: ApplicationFiled: January 30, 2014Publication date: August 7, 2014Applicant: TOYOTA JIDOSHA KABUSHIKI KAISHAInventors: Hideya YAMADERA, Masaaki TSUCHIMORI, Takehiro KATO, Takahiro ITO
-
Patent number: 7582489Abstract: A magnetic sensor apparatus includes a semiconductor substrate and a magnetic impedance device for detecting a magnetic field. The magnetic impedance device is disposed on the substrate. The magnetic sensor apparatus has minimum size and is made with low manufacturing cost. Here, the magnetic impedance device detects a magnetic field in such a manner that impedance of the device is changed in accordance with the magnetic filed when an alternating current is applied to the device and the impedance is measured by an external electric circuit.Type: GrantFiled: February 14, 2008Date of Patent: September 1, 2009Assignee: DENSO CORPORATIONInventors: Kenichi Ao, Yasutoshi Suzuki, Hideya Yamadera, Norikazu Ohta, Hirofumi Funahashi
-
Patent number: 7417269Abstract: A magnetic sensor apparatus includes a semiconductor substrate and a magnetic impedance device for detecting a magnetic field. The magnetic impedance device is disposed on the substrate. The magnetic sensor apparatus has minimum size and is made with low manufacturing cost. Here, the magnetic impedance device detects a magnetic field in such a manner that impedance of the device is changed in accordance with the magnetic filed when an alternating current is applied to the device and the impedance is measured by an external electric circuit.Type: GrantFiled: November 21, 2003Date of Patent: August 26, 2008Assignee: DENSO CORPORATIONInventors: Kenichi Ao, Yasutoshi Suzuki, Hideya Yamadera, Norikazu Ohta, Hirofumi Funahashi
-
Publication number: 20080145956Abstract: A magnetic sensor apparatus includes a semiconductor substrate and a magnetic impedance device for detecting a magnetic field. The magnetic impedance device is disposed on the substrate. The magnetic sensor apparatus has minimum size and is made with low manufacturing cost. Here, the magnetic impedance device detects a magnetic field in such a manner that impedance of the device is changed in accordance with the magnetic filed when an alternating current is applied to the device and the impedance is measured by an external electric circuit.Type: ApplicationFiled: February 14, 2008Publication date: June 19, 2008Applicant: DENSO CORPORATIONInventors: Kenichi Ao, Yasutoshi Suzuki, Hideya Yamadera, Norikazu Ohta, Hirofumi Funahashi
-
Publication number: 20070108970Abstract: A magnetic sensor apparatus includes a semiconductor substrate and a magnetic impedance device for detecting a magnetic field. The magnetic impedance device is disposed on the substrate. The magnetic sensor apparatus has minimum size and is made with low manufacturing cost. Here, the magnetic impedance device detects a magnetic field in such a manner that impedance of the device is changed in accordance with the magnetic filed when an alternating current is applied to the device and the impedance is measured by an external electric circuit.Type: ApplicationFiled: January 9, 2007Publication date: May 17, 2007Applicant: DENSO CORPORATIONInventors: Kenichi Ao, Yasutoshi Suzuki, Hideya Yamadera, Norikazu Ohta, Hirofumi Funahashi
-
Publication number: 20040131887Abstract: A magnetic sensor apparatus includes a semiconductor substrate and a magnetic impedance device for detecting a magnetic field. The magnetic impedance device is disposed on the substrate. The magnetic sensor apparatus has minimum size and is made with low manufacturing cost. Here, the magnetic impedance device detects a magnetic field in such a manner that impedance of the device is changed in accordance with the magnetic filed when an alternating current is applied to the device and the impedance is measured by an external electric circuit.Type: ApplicationFiled: November 21, 2003Publication date: July 8, 2004Inventors: Kenichi Ao, Yasutoshi Suzuki, Hideya Yamadera, Norikazu Ohta, Hirofumi Funahashi
-
Patent number: 5838154Abstract: A magnetic sensor element 1 includes a substrate 10, a conductive layer 12 of a conductive material, and a magnetic layer 11 of a magnetic material, which encloses the conductive layer 12. AC is applied to the element from a drive power source 50, and a detector 60 detects an impedance change due to an external magnetic field. The magnetic layer 11 is bestowed with magnetic anisotropy in a direction orthogonal to the direction of energization of the element 1. With the provision of the conductive layer 12 of conductive material and also with magnetic anisotropy imparted to the magnetic layer 1, the element 1 may be made a low resistivity element. A reactance change and a resistance change of the element due to an external magnetic field change, thus can be effectively detected in drive frequencies two orders of magnitude lower than in the case of a prior art magnetic sensor element.Type: GrantFiled: March 14, 1996Date of Patent: November 17, 1998Assignee: Kabushiki Kaisha Toyota Chuo KenkyushoInventors: Takeshi Morikawa, Yuji Nishibe, Hideya Yamadera, Yutaka Nonomura, Masaharu Takeuchi, Jiro Sakata
-
Patent number: 5625218Abstract: A fuse fusible type semiconductor device capable of reducing energy required for fusing and a production method of the semiconductor device. In a semiconductor device equipped with a heat-fusible thin film resistor, the thin film resistor formed on a substrate 1 through an insulating film 2 is made of chromium, silicon and tungsten, and films 7 and 8 of a insulator including silicon laminated on the upper surface of the fusing surface, aluminum films 5 are disposed on both sides of the fusing surface and a barrier film 4. This semiconductor device is produced by a lamination step of sequentially forming a first insulating film 2, a thin film resistor 3, a barrier film 4 and an aluminum film 5 on a substrate 1 for reducing drastically fusing energy, an etching step of removing the barrier film 4 and the aluminum film 5 from the fusing region 31 of the thin film resistor 3, and an oxide film formation step of depositing the insulator including silicon films 7 and 8.Type: GrantFiled: June 16, 1995Date of Patent: April 29, 1997Assignees: Nippondenso Co., Ltd., Kabushiki Kaisha Toyota Chuo KenkyushoInventors: Hideya Yamadera, Takeshi Ohwaki, Yasunori Taga, Makio Iida, Makoto Ohkawa, Hirofumi Abe, Yoshihiko Isobe
-
Patent number: 5008149Abstract: A ceramic substrate and a metallic layer formed thereon are bonded closely by means of a bonding layer formed between the ceramic substrate and the metallic layer. The ceramic substrate comprises either alumina or a ceramic containing alumina, and the metallic layer comprises either molybdenum (Mo) or an alloy composed of molybdenum (Mo) and at least one of titanium (Ti), zirconium (Zr) and niobium (Nb).Type: GrantFiled: November 22, 1988Date of Patent: April 16, 1991Assignees: Kabushiki Kaisha Toyota Chuo Kenkyusho, Nippon Soken Inc.Inventors: Yasunori Taga, Hideya Yamadera, Keiji Aoki, Tadashi Hattori
-
Patent number: 5001454Abstract: A thin film resistor for a strain gauge prepared by physical or chemical vapor deposition. The resistor contains 60 to 98 atomic % of chromium, 2 to 30 atomic % of oxygen, and 0 to 10 atomic % of a metal or semiconductor. These constituents are uniformly distributed. The thickness of the film is between 0.01 and 10 .mu.m. The metal is at least one of Al, Ti, Ta, Zr and In, and the semiconductor is at least one of silicon, germanium and boron. The thin film resistor has excellent resistance-strain characteristics and resistance-temperature characteristics, as well as high sensitivity and mechanical strength.Type: GrantFiled: September 7, 1989Date of Patent: March 19, 1991Assignees: Kabushiki Kaisha Toyota Chuo Kenkyusho, Nippondenso Co., Ltd.Inventors: Hideya Yamadera, Yoshiki Seno, Yasunori Taga, Katsuhiko Ariga, Tadashi Ozaki, Naoki Hara, Haruhiko Inoue