Abstract: The electrophotographic element comprising mounting on an electrically conductive substrate a Se-Te-Cl alloy system photoconductive layer which contains Te in the range of 6 to 12 wt. % of Se, Cl in the range of 10 to 30 ppm of the total amount of Se and Te and O.sub.2 as impurity 10 ppm or less of the whole alloy, is superior especially in temperature and light fatigue characteristics.

Abstract: A layered electrophotographic photoconductor comprising an electrically conductive base; a charge transporting layer, formed on the electrically conductive base, which charge transporting layer comprises a selenium-tellurium alloy, doped with halogen; and a charge generating layer, formed on the charge transporting layer, which charge generating layer comprises a selenium-tellurium-arsenic alloy, doped with halogen.

Abstract: An electrophotographic photoconductor comprising an electroconductive base and a photosensitive layer formed thereon, the photosensitive layer comprising a selenium-tellurium alloy with a concentration of tellurium in the range of 5 to 20 wt. % and halogen, with a concentration in the range of 5 to 500 ppm, selected from the group consisting of fluorine, chlorine, bromine and iodine, in the photosensitive layer, with the concentration of tellurium substantially uniform or increasing in the direction toward the surface of the photosensitive layer and the ratio of the concentration of tellurium near the electroconductive base to the concentration of tellurium near the surface of said photosensitive layer being 65 or more:100.