Abstract: To provide an illumination method and a light-emitting device which are capable of achieving, under an indoor illumination environment where illuminance is around 5000 lx or lower when performing detailed work and generally around 1500 lx or lower, a color appearance or an object appearance as perceived by a person, will be as natural, vivid, highly visible, and comfortable as though perceived outdoors in a high-illuminance environment, regardless of scores of various color rendition metric. Light emitted from the light-emitting device illuminates an object such that light measured at a position of the object satisfies specific requirements. A feature of the light-emitting device is that light emitted by the light-emitting device in a main radiant direction satisfies specific requirements.

Abstract: To provide an illumination method and a light-emitting device which are capable of achieving, under an indoor illumination environment where illuminance is around 5000 lx or lower when performing detailed work and generally around 1500 lx or lower, a color appearance or an object appearance as perceived by a person, will be as natural, vivid, highly visible, and comfortable as though perceived outdoors in a high-illuminance environment, regardless of scores of various color rendition metric. Light emitted from the light-emitting device illuminates an object such that light measured at a position of the object satisfies specific requirements. A feature of the light-emitting device is that light emitted by the light-emitting device in a main radiant direction satisfies specific requirements.

Abstract: A light-emitting device that can implement a natural, vivid, highly visible and comfortable appearance of colors and appearance of objects as if the objects are seen outdoors is provided. The light-emitting device can change the appearance of colors of the illuminated objects so as to satisfy the requirements for various illuminations. Furthermore, the appearance of colors of the light-emitting device which currently exists or is in use, and which includes a semiconductor light-emitting device of which appearance of colors is not very good, is improved. A method for driving the light-emitting device, an illumination method by the device, and a method for manufacturing the light-emitting device are also provided. These features are achieved by the light-emitting device that incorporates light-emitting elements and satisfies predetermined requirements, in which ?SSL(?) emitted from the light-emitting device satisfies a predetermined condition.

Abstract: To provide an illumination method and a light-emitting device which are capable of achieving, under an indoor illumination environment where illuminance is around 5000 lx or lower when performing detailed work and generally around 1500 lx or lower, a color appearance or an object appearance as perceived by a person, will be as natural, vivid, highly visible, and comfortable as though perceived outdoors in a high-illuminance environment, regardless of scores of various color rendition metric. Light emitted from the light-emitting device illuminates an object such that light measured at a position of the object satisfies specific requirements. A feature of the light-emitting device is that light emitted by the light-emitting device in a main radiant direction satisfies specific requirements.

Abstract: A light-emitting device that can implement a natural, vivid, highly visible and comfortable appearance of colors and appearance of objects as if the objects are seen outdoors is provided. The light-emitting device can change the appearance of colors of the illuminated objects so as to satisfy the requirements for various illuminations. Furthermore, the appearance of colors of the light-emitting device which currently exists or is in use, and which includes a semiconductor light-emitting device of which appearance of colors is not very good, is improved. A method for driving the light-emitting device, an illumination method by the device, and a method for manufacturing the light-emitting device are also provided. These features are achieved by the light-emitting device that incorporates light-emitting elements and satisfies predetermined requirements, in which ?SSL(?) emitted from the light-emitting device satisfies a predetermined condition.

Abstract: To provide an illumination method and a light-emitting device which are capable of achieving, under an indoor illumination environment where illuminance is around 5000 lx or lower when performing detailed work and generally around 1500 lx or lower, a color appearance or an object appearance as perceived by a person, will be as natural, vivid, highly visible, and comfortable as though perceived outdoors in a high-illuminance environment, regardless of scores of various color rendition metric. Light emitted from the light-emitting device illuminates an object such that light measured at a position of the object satisfies specific requirements. A feature of the light-emitting device is that light emitted by the light-emitting device in a main radiant direction satisfies specific requirements.

Abstract: It is an object of the present invention to improve light source efficiency of “a light-emitting device capable of realizing a natural, vivid, highly visible and comfortable appearance of colors or an appearance of objects” already arrived at by adopting a spectral power distribution having a shape completely different from the shape of conventionally known spectral power distributions while maintaining favorable color appearance characteristics.

Abstract: To provide an illumination method and a light-emitting device which are capable of achieving, under an indoor illumination environment where illuminance is around 5000 lx or lower when performing detailed work and generally around 1500 lx or lower, a color appearance or an object appearance as perceived by a person, will be as natural, vivid, highly visible, and comfortable as though perceived outdoors in a high-illuminance environment, regardless of scores of various color rendition metric. Light emitted from the light-emitting device illuminates an object such that light measured at a position of the object satisfies specific requirements. A feature of the light-emitting device is that light emitted by the light-emitting device in a main radiant direction satisfies specific requirements.

Abstract: To provide an illumination method and a light-emitting device which are capable of achieving, under an indoor illumination environment where illuminance is around 5000 lx or lower when performing detailed work and generally around 1500 lx or lower, a color appearance or an object appearance as perceived by a person, will be as natural, vivid, highly visible, and comfortable as though perceived outdoors in a high-illuminance environment, regardless of scores of various color rendition metric. Light emitted from the light-emitting device illuminates an object such that light measured at a position of the object satisfies specific requirements. A feature of the light-emitting device is that light emitted by the light-emitting device in a main radiant direction satisfies specific requirements.

Abstract: To provide an illumination method and a light-emitting device which are capable of achieving, under an indoor illumination environment where illuminance is around 5000 lx or lower when performing detailed work and generally around 1500 lx or lower, a color appearance or an object appearance as perceived by a person, will be as natural, vivid, highly visible, and comfortable as though perceived outdoors in a high-illuminance environment, regardless of scores of various color rendition metric. Light emitted from the light-emitting device illuminates an object such that light measured at a position of the object satisfies specific requirements. A feature of the light-emitting device is that light emitted by the light-emitting device in a main radiant direction satisfies specific requirements.

Abstract: To provide an illumination method and a light-emitting device which are capable of achieving, under an indoor illumination environment where illuminance is around 5000 lx or lower when performing detailed work and generally around 1500 lx or lower, a color appearance or an object appearance as perceived by a person, will be as natural, vivid, highly visible, and comfortable as though perceived outdoors in a high-illuminance environment, regardless of scores of various color rendition metric. Light emitted from the light-emitting device illuminates an object such that light measured at a position of the object satisfies specific requirements. A feature of the light-emitting device is that light emitted by the light-emitting device in a main radiant direction satisfies specific requirements.

Abstract: To provide a high-quality nitride semiconductor ensuring high emission efficiency of a light-emitting element fabricated. In the present invention, when obtaining a nitride semiconductor by sequentially stacking a one conductivity type nitride semiconductor part, a quantum well active layer structure part, and a another conductivity type nitride semiconductor part opposite the one conductivity type, the crystal is grown on a base having a nonpolar principal nitride surface, the one conductivity type nitride semiconductor part is formed by sequentially stacking a first nitride semiconductor layer and a second nitride semiconductor layer, and the second nitride semiconductor layer has a thickness of 400 nm to 20 ?m and has a nonpolar outermost surface. By virtue of selecting the above-described base for crystal growth, an electron and a hole, which are contributing to light emission, can be prevented from spatial separation based on the QCSE effect and efficient radiation is realized.

Abstract: An object of the present invention is to provide a light-emitting device that can implement a natural, vivid, highly visible and comfortable appearance of colors and appearance of objects as if the objects are seen outdoors, and to provide a light-emitting device that can change the appearance of colors of the illuminated objects so as to satisfy the requirements for various illuminations, and a method for designing thereof. Another object of the present invention is to improve the appearance of colors of a light-emitting device which currently exists or is in use, and which includes a semiconductor light-emitting device of which appearance of colors is not very good. Moreover, another object of the present invention is to provide a method for driving the light-emitting device, an illumination method by the device, and a method for manufacturing the light-emitting device.

Abstract: A base at least one principal plane of which is a nitride is prepared for use in epitaxial growth. The base is placed on a susceptor in an epitaxial growth reactor and heated to a predetermined temperature (step A). The heating is started with inactive, nitrogen gas being supplied into the reactor. Then, active, NH3 gas is supplied. Then, a growth step (step B) of a first nitride semiconductor layer is started without an intervening step of thermally cleaning the principal nitride plane of the base. In step B, the first nitride semiconductor layer is epitaxially grown on a principal nitride plane of a base without supply of an Si source material. Then, a relatively thick, second nitride semiconductor layer is epitaxially grown on the first nitride semiconductor layer by supplying an n-type dopant source material (step C).

Abstract: A base at least one principal plane of which is a nitride is prepared for use in epitaxial growth. The base is placed on a susceptor in an epitaxial growth reactor and heated to a predetermined temperature (step A). The heating is started with inactive, nitrogen gas being supplied into the reactor. Then, active, NH3 gas is supplied. Then, a growth step (step B) of a first nitride semiconductor layer is started without an intervening step of thermally cleaning the principal nitride plane of the base. In step B, the first nitride semiconductor layer is epitaxially grown on a principal nitride plane of a base without supply of an Si source material. Then, a relatively thick, second nitride semiconductor layer is epitaxially grown on the first nitride semiconductor layer by supplying an n-type dopant source material (step C).

Abstract: To provide an illumination method and a light-emitting device which are capable of achieving, under an indoor illumination environment where illuminance is around 5000 lx or lower when performing detailed work and generally around 1500 lx or lower, a color appearance or an object appearance as perceived by a person, will be as natural, vivid, highly visible, and comfortable as though perceived outdoors in a high-illuminance environment, regardless of scores of various color rendition metric. Light emitted from the light-emitting device illuminates an object such that light measured at a position of the object satisfies specific requirements. A feature of the light-emitting device is that light emitted by the light-emitting device in a main radiant direction satisfies specific requirements.

Abstract: To provide an illumination method and a light-emitting device which are capable of achieving, under an indoor illumination environment where illuminance is around 5000 lx or lower when performing detailed work and generally around 1500 lx or lower, a color appearance or an object appearance as perceived by a person, will be as natural, vivid, highly visible, and comfortable as though perceived outdoors in a high-illuminance environment, regardless of scores of various color rendition metric. Light emitted from the light-emitting device illuminates an object such that light measured at a position of the object satisfies specific requirements. A feature of the light-emitting device is that light emitted by the light-emitting device in a main radiant direction satisfies specific requirements.

Abstract: To provide a high-quality nitride semiconductor ensuring high emission efficiency of a light-emitting element fabricated. In the present invention, when obtaining a nitride semiconductor by sequentially stacking a one conductivity type nitride semiconductor part, a quantum well active layer structure part, and a another conductivity type nitride semiconductor part opposite the one conductivity type, the crystal is grown on a base having a nonpolar principal nitride surface, the one conductivity type nitride semiconductor part is formed by sequentially stacking a first nitride semiconductor layer and a second nitride semiconductor layer, and the second nitride semiconductor layer has a thickness of 400 nm to 20 ?m and has a nonpolar outermost surface. By virtue of selecting the above-described base for crystal growth, an electron and a hole, which are contributing to light emission, can be prevented from spatial separation based on the QCSE effect and efficient radiation is realized.

Abstract: During the growth of a nitride semiconductor crystal on a nonpolar face nitride substrate, such as an m-face, the gas that constitutes the main flow in the process of heating up to a relatively high temperature range, before growth of the nitride semiconductor layer, (the atmosphere to which the main nitride face of the substrate is exposed) and the gas that constitutes the main flow until growth of first and second nitride semiconductor layers is completed (the atmosphere to which the main nitride face of the substrate is exposed) are primarily those that will not have an etching effect on the nitride, while no Si source is supplied at the beginning of growth of the nitride semiconductor layer. Therefore, nitrogen atoms are not desorbed from near the nitride surface of the epitaxial substrate, thus suppressing the introduction of defects into the epitaxial film. This also makes epitaxial growth possible with a surface morphology of excellent flatness.

Abstract: To provide a high-quality nitride semiconductor ensuring high emission efficiency of a light-emitting element fabricated. In the present invention, when obtaining a nitride semiconductor by sequentially stacking a one conductivity type nitride semiconductor part, a quantum well active layer structure part, and a another conductivity type nitride semiconductor part opposite the one conductivity type, the crystal is grown on a base having a nonpolar principal nitride surface, the one conductivity type nitride semiconductor part is formed by sequentially stacking a first nitride semiconductor layer and a second nitride semiconductor layer, and the second nitride semiconductor layer has a thickness of 400 nm to 20 ?m and has a nonpolar outermost surface. By virtue of selecting the above-described base for crystal growth, an electron and a hole, which are contributing to light emission, can be prevented from spatial separation based on the QCSE effect and efficient radiation is realized.