Abstract: A semiconductor testing device includes: a data memory which stores a test program, said test program generating a test command for testing a plurality of functions within one function area of a plurality of function areas of a semiconductor device, said test command being generated for said function area; a first area generation part which generates first data, said first data identifying one function area of said plurality of function areas, said plurality of functions of said one function area being tested; a main control part which generates said test command based on said test program and said first data and transmits said test command to said semiconductor device; a second area generation part which receives a first result, said first result being returned from said semiconductor device based on a first test in accordance with said test command and generates a second result based on said first result, said second result showing a pass or failure of said first test corresponding to said function area; an

Abstract: A semiconductor memory device 100 is proposed including an internal address generation circuit 3, a first internal address control signal generation part 4, a second internal address control signal generation part 11, and an internal address control signal selection circuit 10 having an OR gate transistor 12. The internal address generation circuit 3 generates an internal address signal based on input address data. The first internal address control signal generation part 4 generates a first internal address control signal and having a function which fixes the first internal address control signal at a predetermined level with the elapse of a fixed period of time. The second internal address control signal generation part 11 generates a second internal address control signal corresponding to an input of a predetermined command. The OR gate transistor 12 transmits either the first internal address control signal or the second internal address control signal to the internal address generation circuit 3.

Abstract: A semiconductor integrated circuit device includes a semiconductor memory and a test circuit. The semiconductor memory includes a memory block having a plurality of memory cells and tests the memory cells. The test circuit includes a controller and a counter. The controller consecutively increments a gate voltage of the memory cells and controls the semiconductor memory so as to read a data from the memory cells provide with the gate voltage. The counter measures, for the gate voltage, the number of memory cells determined to be defective. The controller determines the memory block to be defective when the counter consecutively shows a count falling within a predetermined range during the variation in gate voltage.

Abstract: A semiconductor integrated circuit device includes a semiconductor memory and a test circuit. The semiconductor memory includes a memory block having a plurality of memory cells and tests the memory cells. The test circuit includes a controller and a counter. The controller consecutively increments a gate voltage of the memory cells and controls the semiconductor memory so as to read a data from the memory cells provide with the gate voltage. The counter measures, for the gate voltage, the number of memory cells determined to be defective. The controller determines the memory block to be defective when the counter consecutively shows a count falling within a predetermined range during the variation in gate voltage.

Abstract: A semiconductor testing device includes: a data memory which stores a test program, said test program generating a test command for testing a plurality of functions within one function area of a plurality of function areas of a semiconductor device, said test command being generated for said function area; a first area generation part which generates first data, said first data identifying one function area of said plurality of function areas, said plurality of functions of said one function area being tested; a main control part which generates said test command based on said test program and said first data and transmits said test command to said semiconductor device; a second area generation part which receives a first result, said first result being returned from said semiconductor device based on a first test in accordance with said test command and generates a second result based on said first result, said second result showing a pass or failure of said first test corresponding to said function area; an

Abstract: A semiconductor memory device 100 is proposed including an internal address generation circuit 3, a first internal address control signal generation part 4, a second internal address control signal generation part 11, and an internal address control signal selection circuit 10 having an OR gate transistor 12. The internal address generation circuit 3 generates an internal address signal based on input address data. The first internal address control signal generation part 4 generates a first internal address control signal and having a function which fixes the first internal address control signal at a predetermined level with the elapse of a fixed period of time. The second internal address control signal generation part 11 generates a second internal address control signal corresponding to an input of a predetermined command. The OR gate transistor 12 transmits either the first internal address control signal or the second internal address control signal to the internal address generation circuit 3.